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Part: PTF10120
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> DMOS (Double-diffused MOS)
-> RF Specific
Description: 120 Watts, 1.8-2.0 GHZ Goldmos Field Effect Transistor
Company: Ericsson Microelectronics
Datasheet: Download PTF10120 datasheet File size : 66 kB
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Datasheet text preview:
PTF 10120 120 Watts, 1.82.0 GHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. · ·
INTERNALLY MATCHED
Guaranteed Performance at 1.99 GHz, 28 V - Output Power = 120 Watts Min - Power Gain = 11 dB Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability
· · · · ·
Typical Output Power vs. Input Power
150 100
Output Power (Watts)
120 Out put Power 90 E ffic ienc y 60
80
Efficiency (%)
60
A-12
101
345
698
20
49
40
VDD = 28 V
30
IDQ = 1.2 A Total f = 1990 MHz
0 3 6 9 12 15 18
20
0
0
Input Power (Watts)
Package 20250
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 28 V, POUT = 30 W, IDQ = 1.2 A Total, f = 1.99 GHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 1.2 A Total, f = 1.99 GHz) Drain Efficiency (VDD = 28 V, POUT = 120 W, IDQ = 1.2 A Total, f = 1.99 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 60 W, IDQ = 1.2 A Total, f = 1.99 GHz --all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol
Gps P-1dB hD Y
Min
10 120 -- --
Typ
11 -- 40 --
Max
-- -- -- 10:1
Units
dB Watts % --
e
1
PTF 10120
Electrical Characteristics
Characteristic (per side) Conditions Symbol
V(BR)DSS IDSS VGS(th) gfs
e
(100% Tested--characteristics, conditions and limits shown per side)
Min
65 -- 3.0 --
Typ
-- -- -- 4.0
Max
-- 5.0 5.0 --
Units
Volts mA Volts Siemens
Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 mA Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 150 mA VDS = 10 V, ID = 2 A
Maximum Ratings
Parameter
Drain-Source Voltage(1) Gate-Source Voltage(1) Operating Junction Temperature Total Device Dissipation at Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C)
(1) per side
Symbol
VDSS VGS TJ PD TSTG RqJC
Value
65 ± 20 200 440 2.51 40 to +150 0.39
Unit
Vdc Vdc °C Watts W/°C °C °C/W
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency
Out put Power (W)
Broadband Test Fixture Performance
Output Power & Efficiency
12 Effic ienc y (%) @P-1dB 60
11
140 120
11
45
Gain (dB)
10 Gain (dB) 9 8 Effic ienc y (%) 7 1750 1850 1950
100
Gain (dB)
VDD = 28 V IDQ = 1.2 A Total
10
60 40 20 2050
9
POUT = 120 W
Return Loss (dB)
8 1930
1940
1950
1960
1970
1980
0 - 15 -10 -15 0 -20 1990
Fre que ncy (MHz)
Fre que ncy (MHz)
2
Return Loss
80
Gain (dB)
VDD = 28 V IDQ = 1.2 A Total
30
Efficienc y
12
160
e
Power Gain vs. Output Power
13 -15 12
PTF 10120
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit) VDD = 28 V
Power Gain (dB)
IDQ = 1200 mA IMD (dBc)
11 10 9
-25 -35 -45 -55
IDQ = 1.2 A Total f1 = 1959 MHz f2 = 1960 MHz
IM3
IDQ = 600 mA IDQ = 300 mA VDD = 28 V f = 1990 MHz
10 100 1000
IM5
8 7 1
IM7 -65 0 20 40 60 80 100 120 140
Output Power (Watts)
Output Power (Watts-PEP)
Output Power vs. Supply Voltage
180
Capacitance vs. Supply Voltage (per side) *
240 30
Output Power (Watts)
Cds and Cgs (pF)
160 140 120 100 80 22 24 26 28 30 32 34
200 160
VGS =0 V f = 1 MHz
25 20 15
120 80 40 0 0 10 20 30 40
Cds Crss
IDQ = 1.2 A Total f = 1990 MHz
10 5 0
Supply Voltage (Volts)
Supply Voltage (Volts) * This part is internally matched. Measurements of the finished product will not yield these results.
Z Source
D
Impedance Data
(VDD = 28 V, POUT = 120 W, IDQ = 1.2 A Total)
Z Load
Z0 = 50 W
G G
S
D
Frequency
GHz 1.75 1.80 1.85 1.90 1.95 2.00 2.05 R
Z Source W
jX -10.5 -13.0 -14.1 -15.2 -17.0 -17.5 -18.0 R 4.6 4.2 4.0 3.7 3.6 3.4 3.2 7.6 8.8 9.8 11.0 12.0 13.4 14.6
Z Load W
jX -3.6 -3.2 -2.8 -2.8 -3.2 -3.8 -4.4 3
Crss
Cgs
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