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Details, datasheet, quote on part number:PTF10122
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Datasheet text preview:
PTF 10122 50 Watts WCDMA, 2.12.2 GHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. · ·
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INTERNALLY MATCHED Guaranteed Performance at 2.17 GHz, 28 V - Output Power = 50 Watts Min - Gain = 11.0 dB Typ - Efficiency = 35% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability
Typical Output Power vs. Input Power
60 50 40 30 30 20 10 0 0 1 2 3 4 5 6 20 10 0
Output Power (Watts)
50 40
Efficiency (%)
A-12
1012 3456 2 994
6
VDD = 28 V IDQ = 600 mA f = 2.17 GHz
Input Power (Watts)
Package 20248
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 28 V, POUT = 15 W, IDQ = 600 mA, f = 2.11 GHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 600 mA, f = 2.17 GHz) Drain Efficiency (VDD = 28 V, POUT = 50 W, IDQ = 600 mA, f = 2.17 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 50 W, IDQ = 600 mA, f = 2.17 GHz --all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol
Gps P-1dB hD Y
Min
10.0 50 30 --
Typ
11.0 -- 35 --
Max
-- -- -- 10:1
Units
dB Watts % --
e
1
PTF 10122
Electrical Characteristics (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance
e
Conditions
VGS = 0 V, ID = 100 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 150 mA VDS = 10 V, ID = 2 A
Symbol
V(BR)DSS ID S S VGS(th) gf s
Min
65 -- 3.0 --
Typ
-- -- -- 4.0
Max
-- 2.0 5.0 --
Units
Volts mA Volts Siemens
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) TSTG RqJC
Symbol
VD S S VGS TJ PD
Value
65 ± 20 200 237 1.35 40 to +150 0.74
Unit
Vdc Vdc °C Watts W/°C °C °C/W
Typical Performance
14
50 Effic ienc y @ P-1dB Gain 40 30
Output Power & Efficiency
12 11
70 60 50 40
13 12
Gain (dB)
Gain (dB)
Out put Power (W)
11 10 9 8 7
Gain
10 9 8 7 2000
VDD = 28 V IDQ = 600 mA POUT = 15 W
VDD = 28 V IDQ = 600 mA
2100 Effic ienc y (%) 2200
30 20 2300
6 2100
2125
2150
0 20 -5 -10 Return Loss 10 -15 -20 -25 0 2175 2200
Fre que ncy (MHz)
Fre que ncy (MHz)
2
Return Loss (dB) Efficiency (%)
Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency
Broadband Test Fixture Performance
e
Output Power vs. Supply Voltage
75 -20
PTF 10122
Intermodulation Distortion vs. Output Power
VDD = 28 V, IDQ = 600 mA
-30 3rd Order
Output Power (Watts)
f1 = 2199 MHz, f2 = 2200 MHz
65
IMD (dBc)
-40 5t h -50 7t h -60 -70
55
45
IDQ = 600 mA f = 2.2 GHz
35 22 24 26 28 30 32 34
0
10
20
30
40
50
Supply Voltage (Volts)
Output Power (Watts-PEP)
Power Gain vs. Output Power
12 240
Capacitance vs. Supply Voltage *
24
IDQ = 600 mA
Cds and Cgs (pF) Power Gain (dB)
10
200 160
VGS = 0 V f = 1 MHz
18
120 80 40 0
12
8
Cds
6
IDQ = 150mA
6 0.1 1. 0
VDD = 28 V f = 2.2 GHz
10. 0 100.0
Crss
0 0 10 20 30 40
Output Power (Watts)
Supply Voltage (Volts) * This part is internally matched. Measurements of the finished product will not yield these results.
Bias Voltage vs. Temperature
1.03 1.02 Bias Voltage (V) 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 30 T e mp. (°C) 80 130
0. 400 1. 383 2. 367 3. 350 4. 333 5. 317
Voltage normalized to 1.0 V Series show current (A)
3
Crss
IDQ = 300 mA
Cgs
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