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Part: PTF10133
Category:
Discrete
Description: 85 Watts, 860-960 MHZ Goldmos Field Effect Transistor
Company: Ericsson Microelectronics
Datasheet: Download PTF10133 datasheet File size : 66 kB
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Datasheet text preview:
PTF 10133 85 Watts, 860960 MHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10133 is an internally matched 85 watt LDMOS FET intended for cellular, GSM and D-AMPS applications. This device operates at 50% efficiency with 13.5 dB of gain. Full gold metallization ensures excellent device lifetime and reliability. · ·
· · · ·
INTERNALLY MATCHED Performance at 894 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 13.5 dB Typ - Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability
Typica l Output Power vs. Input Power
120 Ef f ic iency 60 50 40
Output Power (Watts)
100 80 60 40 20 Output Pow er 0 0 1 2 3 4 5 6
Efficiency (%)
VDD = 28.0 V IDQ = 1.0 A f = 894 MHz
30 20 10 0
A-12 3456 9947
1013 3
Input Power (Watts)
Package 20248
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 28 V, POUT = 85 W, IDQ = 1.0 A, f = 894 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 1.0 A, f = 894 MHz) Drain Efficiency (VDD = 28 V, POUT = 85 W, IDQ = 1.0 A, f = 894 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 85 W, IDQ = 1.0 A, f = 894 MHz --all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol
Gp s P-1dB h Y
Min
12.5 85 45 --
Typ
13.5 90 50 --
Max
-- -- -- 10:1
Units
dB Watts % --
e
1
PTF 10133
Electrical Characteristics (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance
e
Conditions
VGS = 0 V, ID = 25 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A
Symbol
V( B R ) D S S ID S S VGS(th) gf s
Min
65 -- 3.0 --
Typ
-- -- -- 3.0
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) TSTG RqJC
Symbol
VD S S VGS TJ PD
Value
65 ± 20 200 205 1.18 40 to +150 0.85
Unit
Vdc Vdc °C Watts W/°C °C °C/W
Typical Performance
Typica l POUT, Gain & Efficiency (at P-1dB) vs. Frequency
Output Power & Efficiency
18 17 16 Output Pow er (W) Gain 15 14 13 12 11 120 110 100 90 80
Broadband Test Fixture Performance
20 Ef f ic ienc y (%) 50 16 60
Gain (dB)
Gain (dB) 12
40
Gain
VDD = 28 V IDQ = 1.0 A POUT = 85 W
30 20 Return Loss (dB) - 10 10
60 50
8
10 40 860 865 870 875 880 885 890 895 900
Ef f icienc y
4 0 - 20 860 865 870 875 880 885 890 895 900
Frequency (MHz)
Frequency (MHz)
2
Return Loss
VDD = 28 V IDQ = 1.0 A
70
Efficiency
e
Output Power vs. Supply Voltage
110
PTF 10133
Ca pa cita nce vs. Supply Voltage *
300 250 48
Output Power (Watts)
100 90 80 70 60 50 40 24 26 28 30 32 34 36
Cds & Cgs (pF)
Cgs
VGS = 0 V f = 1 MHz
40
150 100
24
Cds Crs s
16 8 0
IDQ = 1.0 A f = 894 MHz
50 0 0 10 20 30 40
Supply Voltage (Volts)
Supply Voltage (Volts)
Inte rmodula tion Distortion vs. Output Power
(as measured in a broadband circuit)
-10 3rd Order -20
P ow e r Gain vs. Output Power
16 ID Q = 1.0 15
-30 -40 -50 -60 -70 0 20 40 60 80 100 5th 7th
Power Gain (dB)
VDD = 28 V, IDQ =1A f1 = 894 MHz, f2 = 894.1 MHz
IMD (dBc)
14 ID Q = 500 13 12 11 0.1 10.0 1000.0
ID Q = 250
VDD = 28 V f = 894 MHz
Output Power (Watts-PEP)
Output Power (Watts)
* This part is internally matched. Measurements of the finished product will not yield these figures.
Bias Voltage vs. Temperature
1.03 1.02 Bias Voltage (V) 1.01 1.00
0. 86
Voltage normalized to 1.0 V Series show current (A)
0.99 0.98 0.97 0.96 0.95 -20 30 80 T e mp. (°C)
2. 5 4. 16 5. 8 7. 42 9. 06
130
3
Crss (pF)
200
32
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