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Part: PTF10135
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: 5 Watts, 2.0 GHZ Goldmos Field Effect Transistor
Company: Ericsson Microelectronics
Datasheet: Download PTF10135 datasheet File size : 66 kB
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Datasheet text preview:
PTF 10135 5 Watts, 2.0 GHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10135 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 5 watts minimum output power. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. 100% lot traceability is standard.
Guaranteed Performance at 1.99 GHz, 26 V - Output Power = 5 Watts Min - Power Gain = 11 dB Min Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability
Typica l Output Power vs. Input Power
8 7
Output Power (Watts)
6 5 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5
A-1 234 569 953
101
35
VDD = 26 V IDQ = 70 mA f = 2000 MHz
Input Power (Watts)
Package 20249
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Tf lange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tf lange = 70°C) TS T G RqJC
Symbol
VDSS VGS TJ PD
Value
65 ± 20 200 39 0.22 40 to +150 4.5
Unit
Vdc Vdc °C Watts W/°C °C °C/W
e
1
PTF 10135
Electrical Characteristics (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance
e
Conditions
VGS = 0 V, ID = 5 mA VDS = 26 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 2 A
Symbol
V( B R ) D S S ID S S VGS(th) gf s
Min
65 -- 3.0 --
Typ
-- -- -- 0.8
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 26 V, POUT = 1 W, IDQ = 70 mA, f = 1.93, 1.99 GHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 70 mA, f = 1.99 GHz) Drain Efficiency (VDD = 26 V, POUT = 5 W, IDQ = 70 mA, f = 1.99 GHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 5 W, IDQ = 70 mA, f = 1.99 GHz --all phase angles at frequency of test)
Symbol
Gps P-1dB hD Y
Min
11 5 40 --
Typ
-- -- -- --
Max
-- -- -- 10:1
Units
dB Watts % --
Typical Performance
Typica l POUT, Gain & Efficiency (at P-1dB) vs. Frequency
Output Power & Efficiency
16 15 14 Gain (dB) Ef f ic ienc y (%) 60 50 40
Broa dba nd Test Fixture Performance
Efficiency Return Loss
16 14 Gain (dB) Ef f ic ienc y (%) 10 8 6 4 1930 60 50 40
Gain (dB)
12
Gain
13 12 11 10 1700
VDD = 26 V IDQ = 70 mA
Output Pow er (W)
30 20 10
VDD = 26 V IDQ = 70 mA POUT = 4 W
30 20 Retur n Loss (dB) 10 0 1990
1800
1900
2000
0 2100
1940
1950
1960
1970
1980
Frequency (MHz)
Frequency (MHz)
2
e
Output Power vs. Supply Voltage
8
PTF 10135
Inte rmodula tion Distortion vs. Output Power
(as measured in a broadband circuit)
-10 -20
Output Power (Watts)
7
VDD = 26 V, IDQ = 70 mA f1 = 1999.9 MHz, f2 = 2000.0 MHz
3rd Order
6
IMD (dBc)
-30 -40 -50 7th -60 -70 5th
5
IDQ = 70 mA f = 2000 MHz
4 22 24 26 28 30 32 34
0
1
2
3
4
5
6
Supply Voltage (Volts)
Output Power (Watts-PEP)
Ga in vs. Gate Voltage
20
Capacitance vs. Supply Voltage
18 1.2
PIN = 0.05 W
12 8 f = 1.9 4 f = 2.0 GHz 0 2 3 4 5 6
Cds and Cgs (pF)
Power Gain (dB)
16
VDD = 26 V
15 12 9 6 3 0 0 10 20
0.6
Cds
0.4 0.2
Crss
30 40
0.0
Gate-Source Voltage (Volts)
Supply Voltage (Volts)
Bia s Voltage vs. Temperature
1 .0 3 1 .0 2 Bias Voltage (V) 1 .0 1 1 0 .9 9 0 .9 8 0 .9 7 0 .9 6 -2 0 30 Te m p. (°C) 80 13 0
0.05 0.145 0.24 0.335 0.43 0.525
Voltage normalized to 1.0 V Series show current (A)
3
Crss (pF)
Cgs
VGS = 0 V f = 1 MHz
1.0 0.8
Others parts begin by pt
PT-1 PT-2 PT-3 PT-4 PT-5 PT-6 PT-7 PT-8 PT-9 PT-10 PT-11 PT-12 PT-13 PT-14 PT-15 PT-16 PT-17 PT-18 PT-19 PT-20 PT-21 PT-22 PT-23 PT-24 PT-25 PT-26 PT-27 PT-28 PT-29 PT-30 PT-31 PT-32
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