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Part: PTF10136
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: 6 Watts, 1.0 GHZ Goldmos Field Effect Transistor
Company: Ericsson Microelectronics
Datasheet: Download PTF10136 datasheet File size : 66 kB
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Datasheet text preview:
PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
Description
The PTF 10136 is a 6watt GOLDMOS FET intended for large signal amplifier applications from to 1.0 GHz. It operates at 57% efficiency with 19 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
Performance at 960 MHz, 28 Volts - Output Power = 6 Watts - Efficiency = 57% Typ - Power Gain = 19 dB Typ Full Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel 100% Lot Traceability
Typica l Output Power & Efficiency vs. Input Power
10 Ef f ic ienc y 70 56 42 Efficiency (%) X
·
Output Power (Watts)
8 6 4 2 Output Pow er 0 0.00 0.05 0.10
VDD = 28 V IDQ = 70 mA f = 960 MHz
28 14 0 0.15
A-1 234 569 935
101
36
Input Power (Watts)
Package 20244
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain (VDD = 28 V, POUT = 1 W, IDQ = 70 mA, f = 960 MHz) Power Output at 1 dB Compressed (VDD = 28 V, IDQ = 70 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 6 W, IDQ = 70 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 6 W, IDQ = 70 mA, f = 960 MHz-- all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol
Gps P-1dB h Y
Min
18 6.0 50 --
Typ
19 7.5 57 --
Max
-- -- -- 10:1
Units
dB Watts % --
e
1
PTF 10136
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol
V(BR)DSS IDSS VGS(th) gfs
e
Min
65 -- 3.0 --
Typ
-- -- -- 0.3
Max
-- 1 5.0 --
Units
Volts mA Volts Siemens
Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 0.5 A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) TSTG RqJC
Symbol
VDSS VGS TJ PD
Value
65 ± 20 200 39 0.22 40 to +150 4.5
Unit
Vdc Vdc °C Watts W/°C °C °C/W
Typical Performance
Typi ca l POUT, Gain & Efficiency (at P-1dB) vs. Frequency
75 22 Gain (dB) 20 60 18 16 Ef f iciency (%) 45 14 VDD = 28 V 12 30 IDQ = 70 mA 10 Output Pow er (W) 8 15 6 4 0 840 860 880 900 920 940 960 980 100 0
Broa dba nd Test Fixture Performance
24 60 Ef f icienc y (%) Gain (dB) 16
Output Power & Efficiency
20
50
Gain
Gain
VDD = 28 V IDQ = 70 mA POUT = 6 W
Retur n Loss (dB) 40 -8 30 -15 -20 3 1000
12
8 960
970
980
990
Frequency (MHz)
Frequency (MHz)
2
Return Loss
Efficiency
e
P ow e r Gain vs. Output Power
21
10
PTF 10136
Output Power vs. Supply Voltage
Output Power (Watts)
20
ID Q = 70 mA ID Q = 35 mA
8 6 4 2 0
Power Gain (dB)
19 18 17 16 15 14
ID Q = 20 mA
VD D = 28 V f = 960 MHz
IDQ = 70 mA f = 960 MHz
0.1
1.0
10.0
24
26
28
30
32
Output Power (Watts)
Supply Voltage (Volts)
Inte rm odula tion Distortion vs. Output Power
(as measured in a broadband circuit)
0
Ca pa cita nce vs. Supply Voltage
20 3.0
Cds and Cgs (pF)
-10
IMD (dBc)
-20 -30 -40 -50 -60 0 2 4 6
3rd Order 5th 7th
12 8 4 0 0
2.0
Cds Crss
10 20 30 40
1.5 1.0 0.5
8
10
Output Power (Watts-PEP)
Supply Voltage (Volts)
Bia s Voltage vs. Temperature
1 .03 1 .02 Bias Voltage (V) 1 .01 1 0 .99 0 .98 0 .97 0 .96 0 .95 -2 0 30 Tem p. (°C) 80 130
0.05 0.145 0.24 0.335 0.43 0.525
Voltage normalized to 1.0 V Series show current (A)
3
Crss (pF)
VDD = 28 V, IDQ = 70 mA f1 = 960.0 MHz, f2 = 960.1 MHz
16
Cgs
VGS = 0 V f = 1 MHz
2.5
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