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Part: EM562081BC
Category:
Memory
-> SRAM
-> SRAM
Description: Memory, SRAM
Company: Etron Technology Inc.
Datasheet: Download EM562081BC datasheet File size : 56 kB
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Datasheet text preview:
EtronTech
Features
· Single power supply voltage of 2.7V to 3.6V · Power down features using CE1# and CE2 · Low operating current : 25mA(max. for 70 ns) · Maximum Standby current : 10µA at 3.6 V · Data retention supply voltage: 1.5V to 3.6V · Direct TTL compatibility for all input and output · Wide operating temperature range: -40°C to 85°C · Package type: 36-ball TFBGA, 6x8mm
EM562081
256K x 8 Low Power SRAM
Preliminary, Rev 1.0 7/2001
asserted low. There are three control inputs. CE1# and CE2 are used to select the device and for data retention control, and output enable (OE#) provides fast memory access. Data byte control pin (LB#,UB#) provides lower and upper byte access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating range from -40°C to 85°C, the EM562081 can be used in environments exhibiting extreme temperature conditions.
Ordering Information
Part Number
EM562081BC-70 EM562081BC-85
Pin Assignment
IDDS2
10 µA 10 µA
Speed
70 ns 85 ns
Package
6x8 BGA 6x8 BGA
1. 36-Ball BGA (CSP), Top View
1 2 3 4 5 6
A
A0
A1
CE 2
A3
A6
A8
Pin Names
Symbol
A0 - A17 DQ0-DQ7 CE1#,CE2 OE# WE# GND VDD NC
B
DQ 4
A2
WE#
A4
A7
DQ 0
Function
Address Inputs Data Inputs/Outputs Chip Enable Inputs Output Enable Read/Write Control Input Ground Power Supply No Connection
C
DQ 5
NC
A5
DQ 1
D
G ND
V DD
E
V DD
G ND
F
DQ 6
NC
A1 7
DQ 2
G
DQ 7
O E#
C E 1#
A16
A15
DQ 3
H
A9
A1 0
A1 1
A12
A13
A14
Overview
The EM562081 is a 2,097,152-bit SRAM organized as 262,144 words by 8 bits. It is designed with advanced CMOS technology. This Device operates from a single 2.7V to 3.6V power supply. Advanced circuit technology provides both high speed and low power. It is automatically placed in low-power mode when chip enable (CE1#) is asserted high or (CE2) is
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.
EtronTech
Block Diagram
EM562081
A0 MEM ORY CELL ARRAY 256 KX 8
V DD
GND
A1 7
DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7
SE NSE AMP
COLUMN ADDRESS DECODER
WE #
CE 1# CE 2 OE #
POWER DOWN CIR C UIT
Preliminary
2
Rev 1.0
July 2001
EtronTech
Operating Mode
Mode Read Write Output Deselect Standby CE1# L L L H X CE2 H H H X L OE# L X H X X WE# H L H X X
EM562081
DQ0~DQ7 DOUT DIN High-Z High-Z High-Z
Power Active Active Active Standby Standby
Note: X = don't care. H = logic high. L = logic low. Absolute Maximum Ratings
Supply voltage, VDD Input voltages, VIN Input and output voltages, VI/O Operating temperature, TOPR Storage temperature, TSTRG Soldering Temperature (10s), TSOLDER Power dissipation, PD -0.3 to +4.6V -0.3 to +4.6V -0.5 to VDD + 0.5V -40 to +85°C -55 to +150°C 240°C 0.6 W
DC Recommended Operating Conditions (Ta=-40° C to 85° C )
Symbol VDD VIH VIL VDR Parameter Power Supply Voltage Input High Voltage Input Low Voltage Data Retention Supply Voltage Min 2.7 2.2 -0.3
(2)
Typ - - - -
Max 3.6 VDD + 0.3 0.6 3.6
(1)
Unit V V V V
1.5
Note: (1) Overshoot : VDD +2.0V in case of pulse width 20ns (2) Undershoot : -2.0V in case of pulse width 20ns
Preliminary
3
Rev 1.0
July 2001
EtronTech
DC Characteristics (Ta = -40° C to 85° C , VDD = 2.7V to 3.6V)
Parameter Input low current Output low voltage Output high voltage Symbol IIL VOL VOH IDD1 IDD2 IDDS1 Standby current IIN = 0V to VDD IOL = 2.1 mA IOH = -1.0 mA VDD = 3.6 V , CE1# = VIL and CE2 = VIH and IOUT = 0mA Other Input = VIH / VIL CE1# = VIH or CE2 = VIL Cycle time = min Cycle time = 1µs Test Conditions
EM562081
Min -1 2.2 - - - -
Typ* - - - 10 - - 1
Max Unit 1 0.4 - 25 mA 5 0.5 10 mA µA µA V V
Operating current
IDDS2** CE1# VDD 0.2V or CE2 0.2V, (Note)
Notes: * Typical value are measured at Ta = 25°C, and not 100% tested. ** In standby mode with CE1# VDD - 0.2V, these limits are assured for the condition CE2 VDD - 0.2V or CE2 0.2V.
Capacitance (Ta = 25° C; f = 1 MHz)
Parameter Input capacitance Output capacitance Symbol CIN Min - Typ - Max 10 Unit pF Test Conditions VIN = GND
COUT - - 10 pF VOUT = GND Notes: This parameter is periodically sampled and is not 100% tested.
Preliminary
4
Rev 1.0
July 2001
EtronTech
Read Cycle
EM562081
AC Characteristics and Operating Conditions (Ta = -40° C to 85° C, V DD = 2.7V to 3.6V)
EM562081 Symbol tRC tAA tCO1 tCO2 t OE tLZ tOLZ tHZ tOHZ tOH Write Cycle EM562081 Symbol tW C tW P tCW tAS tW R t WHZ tOW tDS tDH Write cycle time Write pulse width Chip Enable to end of write Address setup time Write Recovery time WE# Low to Output in High-Z WE# High to Output in Low-Z Data Setup Time Data Hold Time Parameter 85 55 70 0 0 - 5 35 0 -85 -70 Unit - - - - - 30 - - - ns Min Max Min Max - - - - - 35 - - - 70 55 60 0 0 - 5 30 0 Read cycle time Address access time Chip Enable (CE1#) Access Time Chip Enable (CE2) Access Time Output enable access time Chip Enable Low to Output in Low-Z Output enable Low to Output in Low-Z Chip Enable High to Output in High-Z Output Enable High to Output in High-Z Output Data Hold Time Parameter 85 - - - - 10 3 - - 10 -85 -70 Unit - 70 70 70 35 - - 25 25 - ns Min Max Min Max - 85 85 85 45 - - 35 35 - 70 - - - - 10 3 - - 10
AC Test Condition
· Output load: 50pF + one TTL gate · Input pulse level: 0.4V, 2.4V · Timing measurements: 0.5 x VDD · tR, tF: 5ns
Preliminary
5
Rev 1.0
July 2001
Others parts begin by em
EM-1 EM-2 EM-3 EM-4 EM-5 EM-6 EM-7
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