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Part: EM562161BC-70
Category:
Memory
-> SRAM
-> SRAM
Description: Memory, SRAM
Company: Etron Technology Inc.
Datasheet: Download EM562161BC-70 datasheet File size : 56 kB
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Datasheet text preview:
EtronTech
Features
· Single power supply voltage of 2.7V to 3.6V · Power down features using CE1# and CE2 · Low operating current : 30mA(max for 55 ns) · Maximum Standby current : 10µA at 3.6 V · Data retention supply voltage: 1.5V to 3.6V · Direct TTL compatibility for all input and output · Wide operating temperature range: -40°C to 85°C · Package type: 48-ball TFBGA, 6x8mm
EM562161
128K x 16 Low Power SRAM
Preliminary, Rev 1.0 07/2001
circuit technology provides both high speed and low power. It is automatically placed in low-power mode when chip enable (CE1#) is asserted high or (CE2) is asserted low. There are three control inputs. CE1# and CE2 are used to select the device and for data retention control, and output enable (OE#) provides fast memory access. Data byte control pin (LB#,UB#) provides lower and upper byte access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating range from -40°C to 85°C, the EM562161 can be used in environments exhibiting extreme temperature conditions.
Ordering Information
Part Number
EM562161BC-55 EM562161BC-70
Speed
55 ns 70 ns
IDDS2
10 µA 10 µA
Package
6x8 BGA 6x8 BGA
Pin Configuration
48-Ball BGA (CSP), Top View
1 2 3 4 5 6
Pin Description
Symbol
A0 - A16 DQ0 - DQ15 CE1#, CE2 OE# WE# LB#, UB# GND VDD NC
Function
Address Inputs Data Inputs / Outputs Chip Enable Inputs Output Enable Read / Write Control Input Data Byte Control Inputs Ground Power Supply No Connection
A
LB #
O E#
A0
A1
A2
CE 2
B
DQ 8
UB #
A3
A4
C E1 #
DQ 0
C
DQ 9
DQ 1 0
A5
A6
DQ 1
DQ 2
D
GN D
DQ 1 1
NC
A7
DQ 3
VD D
E
V DD
DQ 1 2
NC
A 16
DQ 4
G ND
F
DQ 1 4
DQ 1 3
A 14
A 15
DQ 5
DQ 6
Overview
The EM562161 is a 2,097,152-bit SRAM organized as 131,072 words by 16 bits. It is designed with advanced CMOS technology. This Device operates from a single 2.7V to 3.6V power supply. Advanced
G DQ 1 5 NC A 12 A 13 WE# DQ 7
H
NC
A8
A9
A 10
A1 1
NC
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C. TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.
EtronTech
Block Diagram
EM562161
A0 MEMORY CELL ARRAY 2,04 8X64X 16 (2,097, 152) A 16
V DD
GND
DQ 0 DQ 1 DQ 2 DQ 3 DQ 4 DQ 5 DQ 6 DQ 7
SENS E AMP
DQ 8 DQ 9 DQ 0 1 DQ 1 1 DQ 2 1 DQ 3 1 DQ 4 1 DQ 5 1 C O UMN ADDRESS L DEC O ER D
W E# UB#
LB #
OE # CE1# CE2
POWER DO N W CIRCUT I
Preliminary
2
Rev 1.0
July 2001
EtronTech
Operating Mode
Mode CE1# CE2 OE# WE# LB# L Read L H L H H L L Write L H X L H L Output Deselect L H Standby X L H X L H H X X X H X X X X X X H UB# L L H L L H X X X H High-Z High-Z DQ0~DQ7 DOUT High-Z DOUT DIN High-Z DIN High-Z DOUT DOUT High-Z DIN DIN High-Z High-Z
EM562161
DQ8~DQ15
Power Active Active Active Active Active Active Active
Standby
Note: X = don't care. H=logic high. L=logic low. Absolute Maximum Ratings
Supply voltage, VDD Input voltages, VIN Input and output voltages, VI/O Operating temperature, TOPR Storage temperature, TSTRG Soldering Temperature (10s), TSOLDER Power dissipation, PD -0.3 to +4.6V -0.3 to +4.6V -0.5 to VDD +0.5V -40 to +85°C -55 to +150°C 240°C 0.6 W
DC Recommended Operating Conditions (Ta=-40° C to 85° C )
Symbol VDD VIH VIL VDR Parameter Power Supply Voltage Input High Voltage Input Low Voltage Data Retention Supply Voltage Min 2.7 2.2 -0.3
(2)
Typ - - - -
Max 3.6 VDD + 0.3 0.6 3.6
(1)
Unit V V V V
1.5
Note: (1) Overshoot : VDD +2.0V in case of pulse width 20ns (2) Undershoot : -2.0V in case of pulse width 20ns
Preliminary
3
Rev 1.0
July 2001
EtronTech
DC Characteristics (Ta = -40° C to 85° C , VDD = 2.7V to 3.6V)
Parameter Input low current Output low voltage Output high voltage Symbol IIL VOL VOH IIN = 0V to VDD IOL = 2.1 mA IOH = -1.0 mA VDD = 3.6 V , IDD1 Operating current IDD2 IDDS1 Standby current Notes: * Typical value are measured at Ta = 25°C, and not 100% tested. ** In standby mode with CE1# VDD - 0.2V, these limits are assured for the condition CE2 VDD - 0.2V or CE2 0.2V. IDDS2** (Note) CE1# = VIL and CE2 = VIH and IOUT = 0mA Other Input = VIH / VIL CE1# = VIH or CE2 = VIL CE1# VDD 0.2V or CE2 0.2V, or LB# = UB# VDD 0.2V Cycle time = min 55 ns 70 ns Test Conditions Min -1 2.2 - - - - -
EM562161
Typ* - - - 15 10 - - 1
Max Unit 1 0.4 - 30 25 4 0.5 10 mA µA mA µA V V
Cycle time = 1µs
Capacitance (Ta = 25° C; f = 1 MHz)
Parameter Input capacitance Output capacitance Symbol CIN Min - Typ - Max 10 Unit pF Test Conditions VIN = GND
COUT - - 10 pF VOUT = GND Notes: This parameter is periodically sampled and is not 100% tested.
Preliminary
4
Rev 1.0
July 2001
EtronTech
Read Cycle Symbol tRC tAA tCO1 tCO2 t OE tBA tLZ tOLZ t BLZ tHZ tOHZ tBHZ tOH Write Cycle Symbol tW C tW P tCW tB W tAS tW R t WHZ tOW tDS tDH Write cycle time Write pulse width Chip Enable to end of write Data Byte Control to end of Write Address setup time Write Recovery time WE# Low to Output in High-Z WE# High to Output in Low-Z Data Setup Time Data Hold Time Parameter 55 40 45 45 0 0 - 5 25 0 Read cycle time Address access time Chip Enable (CE1#) Access Time Chip Enable (CE2) Access Time Output enable access time Data Byte Control Access Time Chip Enable Low to Output in Low-Z Output enable Low to Output in Low-Z Data Byte Control Low to Output in Low-Z Chip Enable High to Output in High-Z Output Enable High to Output in High-Z Data Byte Control High to Output in High-Z Output Data Hold Time Parameter 55 - - - - - 10 3 5 - - - 10
EM562161
AC Characteristics and Operating Conditions (Ta = -40° C to 85° C, V DD = 2.7V to 3.6V)
EM562161 -55 -70 Min Max Min Max - 55 55 55 25 55 - - - 20 20 20 - 70 - - - - - 10 3 5 - - - 10 - 70 70 70 35 70 - - - 25 25 25 - ns
Unit
EM562161 -55 -70 Min Max Min Max - - - - - - 25 - - - 70 55 60 60 0 0 - 5 30 0 - - - - - - 30 - - -
Unit
ns
AC Test Condition
· Output load : 50pF + one TTL gate · Input pulse level : 0.4V, 2.4V · Timing measurements : 0.5 x VDD · tR, tF : 5ns
Preliminary
5
Rev 1.0
July 2001
Others parts begin by em
EM-1 EM-2 EM-3 EM-4 EM-5 EM-6 EM-7
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