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Part: EM564081BA-70E
Category:
Memory
-> SRAM
-> SRAM
Description: 70ns 512K X 8 Low Power SRAM
Company: Etron Technology Inc.
Datasheet: Download EM564081BA-70E datasheet File size : 56 kB
Request For quote: Find where to buy EM564081BA-70E
Datasheet text preview:
EtronTech
Features
· Single power supply voltage of 2.3V to 3.6V · Power down features using CE1# and CE2 · Low power dissipation · Data retention supply voltage: 1.0V to 3.6V · Direct TTL compatibility for all input and output · Wide operating temperature range: -40°C to 85°C · Standby current @ VDD = 3.6 V
IDDS2 Typical EM564081BA/BC-70/85 EM564081BA/BC-70E/85E 1 µA 5 µA Maximum 10 µA 80 µA
E V DD D G ND C DQ 5 NC A5 A
EM564081
512K x 8 Low Power SRAM
Preliminary, Rev 0.7 01/2001 Pin Configuration
36-Ball BGA (CSP), Top View
1 2 3 4 5 6
A0
A1
CE 2
A3
A6
A8
B
DQ 4
A2
WE#
A4
A7
DQ0
DQ1
V DD
GND
F
DQ 6
A18
A1 7
DQ2
Ordering Information
G DQ 7
Part Number
EM564081BC-70 EM564081BC-70E EM564081BA-70 EM564081BA-70E EM564081BC-85 EM564081BC-85E EM564081BA-85 EM564081BA-85E
Speed
70 ns 70 ns 70 ns 70 ns 85 ns 85 ns 85 ns 85 ns
IDDS2
10 µA 80 µA 10 µA 80 µA 10 µA 80 µA 10 µA 80 µA
Package
6x8 BGA 6x8 BGA 8x10 BGA 8x10 BGA 6x8 BGA 6x8 BGA 8x10 BGA 8x10 BGA
H A9
OE#
CE 1 #
A 16
A 15
DQ3
A1 0
A1 1
A1 2
A 13
A 14
Pin Description
Symbol
A0 - A18 DQ0 DQ7 CE1#, CE2 OE# WE# GND VDD NC
Function
Address Inputs Data Inputs / Outputs Chip Enable Inputs Output Enable Read / Write Control Input Ground Power Supply No Connection
Overview
The EM564081 is a 4,194,304-bit SRAM organized as 512K by 8 bits. It is designed with advanced CMOS technology. This Device operates from a single 2.3V to 3.6V power supply. Advanced circuit technology provides both high speed and low power. It is automatically placed in low-power mode when chip enable (CE1#) is asserted high or (CE2) is asserted low. There are three control inputs. CE1# and CE2 are used to select the device and for data retention control, and output enable (OE#) provides fast memory access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating range from -40°C to 85°C, the EM564081 can be used in environments exhibiting extreme temperature conditions.
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C. TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.
EtronTech
Block Diagram
EM564081
A0 ME MORY C E LL ARRAY 5 1 2 K X8 A18
VDD
GND
DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7
SEN S E AMP
COLUMN ADDRESS DECODER
W E#
C E1# CE 2 OE#
POWER DOWN CIRCUIT
Preliminary
2
Rev 0.7
January 2001
EtronTech
Operating Mode
Mode Read Write Output Deselect Standby X L X X CE1# CE2 L L L H H H H X OE# WE# L X H X H L H X High-Z DQ0~DQ7 DOUT DIN High-Z
EM564081
Note: X = don't care. H=logic high. L=logic low. Absolute Maximum Ratings
Supply voltage, VDD Input voltages, VIN Input and output voltages, VI/O Operating temperature, TOPR Storage temperature, TSTRG Soldering Temperature (10s), TSOLDER Power dissipation, PD -0.3 to +4.6V -0.3 to +4.6V -0.5 to VDD +0.5V -40 to +85°C -55 to +150°C 260°C 0.6 W
DC Recommended Operating Conditions (Ta=-40°C to 85°C)
Symbol VDD VIH VIL Parameter Power Supply Voltage Input High Voltage Input Low Voltage Min 2.3 2.2 -0.3
(2)
Typ - - - -
Max 3.6 VDD + 0.3 0.6 3.6
(1)
Unit V V V V
VDR Data Retention Supply Voltage Note: (1) Overshoot : VDD +2.0V in case of pulse width 20ns (2) Undershoot : -2.0V in case of pulse width 20ns
1.0
Preliminary
3
Rev 0.7
January 2001
EtronTech
DC Characteristics (Ta = -40°C to 85°C, VDD = 2.3V to 3.6V)
Parameter Input low current Output low voltage Output high voltage Symbol IIL VOL VOH IIN = 0V to VDD IOL = 2.1 mA IOH = -1.0 mA VDD = 3.6 V CE1# = VIL and IDD1 Operating current CE2 = VIH and IOUT = 0mA Other Input = VIH / VIL IDD2 IDDS1 Standby current IDDS2** (Note) CE1# = VIH or CE2 = VIL CE1# = VDD 0.2V or CE2 = 0.2V VDD = 3.6 V -70/85 VDD = 2.7 V VDD = 2.3 V VDD = 3.6 V Cycle time = 1µs Cycle time = min VDD = 2.7 V VDD = 2.3 V Test Conditions Min -1 VDD 0.15 - - - - - - - - -
EM564081
Typ* - - - 15 10 7 - - 1 0.8 0.5 5
Max Unit 1 0.4 - 25 15 mA 12 5 0.5 10 5 3 80 µA mA µA V V
-70E/85E Notes: * Typical value are measured at Ta = 25°C.
** In standby mode with CE1# VDD - 0.2V, these limits are assured for the condition CE2 VDD - 0.2V or CE2 0.2V.
Capacitance (Ta = 25°C; f = 1 MHz)
Parameter Input capacitance Output capacitance Symbol CIN Min - Typ - Max 10 Unit pF Test Conditions VIN = GND
COUT 10 pF VOUT = GND - - Notes: This parameter is periodically sampled and is not 100% tested.
Preliminary
4
Rev 0.7
January 2001
EtronTech
Read Cycle
EM564081
AC Characteristics and Operating Conditions (Ta = -40°C to 85°C, VDD = 2.3V to 3.6V)
EM564081 Symbol tRC tAA tCO1 tCO2 t OE tLZ t OLZ t HZ t OHZ tOH Write Cycle EM564081 Symbol tW C tW P tC W tAS tW R tW H Z tO W tDS tDH Write cycle time Write pulse width Chip Enable to end of write Address setup time Write Recovery time WE# Low to Output in High-Z WE# High to Output in Low-Z Data Setup Time Data Hold Time Parameter -85 -70 Unit - - - - - 30 - - - ns Min Max Min Max 85 55 70 0 0 - 5 35 0 - - - - - 35 - - - 70 55 60 0 0 - 5 30 0 Read cycle time Address access time Chip Enable (CE1#) Access Time Chip Enable (CE2) Access Time Output enable access time Chip Enable Low to Output in Low-Z Output enable Low to Output in Low-Z Chip Enable High to Output in High-Z Output Enable High to Output in High-Z Output Data Hold Time Parameter -85 -70 Unit - 70 70 70 35 - - 25 25 - ns Min Max Min Max 85 - - - - 10 3 - - 10 - 85 85 85 45 - - 35 35 - 70 - - - - 10 3 - - 10
AC Test Condition
· Output load: 50pF + one TTL gate · Input pulse level: 0.4V, 2.4V · Timing measurements: 0.5 x VDD · tR, tF: 5ns
Preliminary
5
Rev 0.7
January 2001
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