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Details, datasheet, quote on part number:D721S-3500
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Datasheet text preview:
European PowerSemiconductor and Electronics Company
Marketing Information D 721 S
C
ø3,5±
A
0,1
4875-0,2
Applikation: Freilaufdiode in Spannungszwischenkreisumrichter bis VD(DC) = 2000 V
VWK January
Schnelle Gleichrichterdiode Fast Diode
D 721 S 45 T
Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung repetitive peak reverse voltage Stoßspitzensperrspannung non-repetitive peak reverse voltage Durchlaßstrom-Grenzeffektivwert / RMS forward current Dauergrenzstrom / mean forward current Stoßstrom-Grenzwert1) surge forward current1) Grenzlastintegral I²t-value Kritische periodische Ausschaltstromsteilheit critical repetitive rate of fall of on - state tC = 85°C tC = 52°C tvj = 25°C tvj = 125°C tvj = 25°C tvj = 125°C tvj = 125°C, I M = 2000 A, V = 3000 V F R C = 0,25 µF, R = 6 (-di/dt)com I²t IFSM tvj = +25°C...125°C VRSM IFRMSM IFAVM tvj = -40°C...125°C VRRM 3500 V, 4000 V 4500 V 3600 V, 4100 V 4600 V 1700 A 720 A 1080 A 16000 A 15000 A 1,3x106 A²s 1,13x106 A²s 500 A/µs
Charakteristische Werte / Characteristic values
Gleichsperrspannung / cont. direct reverse voltage Durchlaßspannung / forward voltage Schleusenspannung / threshold voltage Ersatzwiderstand / forward slope resistance Sperrstrom / reverse current Rückstromspitze / peak reverse recovery current tc = -40°C ... +85°C tvj = 125°C i M = 2500 A F tvj = 125°C tvj = 125°C tvj = 125°C, v = 0,67 V RM R R tvj = 125°C, v = VRRM R iFM = 1000 A, -di /dt = 250 A/µs F tvj = 125 °C; v = 1000 V; R C = 0,25 µF; R = 6 Sperrverzögerungsladung recovered charge iFM = 1000 A, -di /dt = 250 A/µs F tvj = 125 °C; v = 1000 V; R C = 0,25 µF; R = 6 Qrr 1700 µAs IRM VR(D) VF V(TO) rT iR typ. 2000 V 3,5 V 1,7 V 0,69 m ca. 75 mA 140 mA 1) 600 A
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand thermal resistance, junction to case Kühlfläche / cooling surface beidseitig / two-sided Anoden / anode Kathode / cathode Übergangs-Wärmewiderstand thermal resistance, case to heatsink Höchstzul. Sperrschichttemp. / max. junction temperat. Betriebstemperatur / operating temperature Lagertemperatur / storage temperature Kühlfläche / cooling surface beidseitig / two-sided einseitig / single-sided tvjmax tc op tstg RthCK 0,005 K/W 0,01 K/W 125 °C -40...+125 °C -40...+150 °C RthJC 0,018 K/W 0,033 K/W 0,04 K/W
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage / case, see appendix Anpreßkraft /clamping force Gewicht / weight Luftstrecke / air distance Kriechstrecke / creepage distance Feuchteklasse / humidity classification Schwingfestigkeit / vibration resistance DIN 40040 f = 50 Hz F G Seite / page 1 15...36 kN ca. 600 g ca. 20 mm 30 mm C 50 m/s²
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 1) Richtwert für obere Streubereichsgrenze / Upper limit of scatter range (standart value)
D 721 S
4000 4000 3500 PFAV [W] 3000 2500
30% 100% 90% 80% 70% 60% 50%
iF [A] 3000
40%
2000
2000 1500
20%
1000
1000
10%
500
5%
0 1,0
D 721 S_01
1,5
2,0
2,5
3,0
3,5 vF [V]
4,0
4,5
0
500
D 721 S_02
1000
1500
2000 IF [A]
2500
tvj = 125°C
Fig. 1 On-state characteristic iF = f(VF)
Upper limit of scatter range Lower limit of scatter range
Fig. 2 On-state losses (average values) IF = f(PFAV) tvj = 125 °C
0,06
Analytical elements of transient thermal impedance ZthJC for DC 1. ZthJC [s] r [K/W] 0,00637 1,80000 0,00904 0,14000 0,00267 0,01410 0,00080 0,00265 0,00012 0,00067 0,00180 2. ZthJC [s] r [K/W] 0,02137 8,00000 0,00904 0,14000 0,00167 0,01410 0,00080 0,00265 0,00012 0,00067 0,03300 3. ZthJC [s] r [K/W] 0,02837 6,80000 0,00904 0,14000 0,00167 0,01410 0,00080 0,00265 0,00012 0,00067 0,04000 -
0,05 ZthJC [K/W] 0,04 1 2 3 4 5
3 2
0,03 Analytical function:
nmax
0,02
1
ZthJC =
n=1
R
thn
(1-EXP(-t/n))
0,01
0 0,001
2 34 68
2 34 68
2 34 68
2 34 68
2 34 68
0,01
0,1
1
10 t [s]
100
D 721 S_03
Fig. 3 Transient thermal impedance 1 - Two-sided cooling 2 - Anode-sided cooling 3 - Cathode-sided cooling
ZthJC = f(t), DC
D 721 S
100
8 6 5 4
0,008 0,007 rth [K/W] 0,006 0,005 0,004
8 6 5 4 3 2 1 T= Hz 50 IFSM tp
f = 50Hz
f = 60Hz
IFSM [kA]
3 2
10
f = 100Hz
0,003 0,002 0,001
Sine half wave 50Hz f = 500Hz 3 4 56 8 2 3 4 56 8 2 3 4 56 8 2
f = 200Hz
1 0,1
1
1 tp [ms]
10
0 10
D 721 S_04
20
30
40
50
60
D 721 S_05
70 80 ED [%] [°el]
90
100
Fig. 4 Surge Current IFSM = f(tp) IFSM = f(Sine half wave) tvj = 125°C VR = 0 1000 1000
Fig. 5 rth = f(ED, Frequency)
Two-sided cooling Current wave form: square wave Parameter: frequency
9 7
IRM [A]
5 4 3 2
3000A 2000A 1000A 600A 300A 100A
9 7
IRM [A]
5 4 3 2
3000A 2000A 1000A 600A 300A 100A
100
9 7 5 4 3 IFM 2 -di/dt IRM Qrr
100
9 7 5 4 3 IFM 2 Qrr VR 3 4 5 6 789
VR 3 4 5 6 789
-di/dt IRM
10 10
D 721 S_06
2
3
4
5 6 789
2
100 -di/dt [A/µs]
1000
10 10
D 721 S_07
2
3
4
5 6 789
2
100 -di/dt [A/µs]
1000
Fig. 6 Reverse recovery current (upper-limit, ca. 98% values) Application: GTO-freewheeling diode
Parameter: IFM tvj 125°C; CS 4µF RS = 0 ; VR > 2000 V ... 3000 V
Fig. 7 Reverse recovery current (lower-limit, ca. 2% values) Application: GTO-freewheeling diode
Parameter: IFM tvj 125°C; CS 4µF, Diode D291S RS = 0 ; VR > 2000 V ... 3000 V
D 721 S
1000
9 7 5
1000
9 7 5 IFM -di/dt IRM Qrr VR
Qrr [µAs]
4 3 2 IFM = 3000A 2000A 1000A 600A 300A 100A
Qrr [µAs]
4 3 2
100
9 7 5 4 3 IFM 2 -di/dt IRM Qrr
100
9 7 5 4 3 2
IFM = 3000A 2000A 1000A 600A 300A 100A
VR 3 4 5 6 789
10 10
D 721 S_08
2
3
4
5 6 789
2
100 -di/dt [A/µs]
1000
10 10
D 721 S_09
2
3
4
5 6 789
2
3
4
5 6 789
100 -di/dt [A/µs]
1000
Fig. 8 Reverse recovery charge (upper limit, ca. 98% values)
Application: GTO-freewheeling diode
Fig. 9 Reverse recovery charge (lower limit, ca. 2% values)
Application: GTO-freewheeling diode tvj 125°C; CS 4µF RS = 0 ; VR > 2000 V ... 3000 V
Parameter: IFM
tvj 125°C; CS 4µF RS = 0 ; VR > 2000 V ... 3000 V
Parameter: IFM
10
9 7 5 3000A 1000A 600A 300A
10
9 7 5
IFM = 3000A 1000A 600A 300A
Eoff [Ws]
4 3 2
Eoff [Ws]
4 3 2
100A
100A
1
9 7 5 4 3 2 IFM -di/dt IRM Qrr VR(Spr) VR 3 4 5 6 789
1
9 7 5 4 3 2 IFM -di/dt IRM 2 3 4 5 6 789 2 3 4 Qrr VR(Spr) VR 5 6 789
0,1 10
D 721 S_13
2
3
4
5 6 789
2
100 -di/dt [A/µs]
1000
0,1 10
D 721 S_11
100 -di/dt [A/µs]
1000
Fig. 10 Turn-off-losses Eoff = f(di/dt) diodes with VFmax Application: GTO-freewheeling diode
Parameter:IFM; Snubberdiode D 291 S tvj = 125°C; CS = 6 µF für vR VRM CS = 36 µF für vR VRM LS = 0,2 µH
Fig. 11 Turn-off-losses Eoff = f(di/dt) diodes with VFmax Application: GTO-freewheeling diode VR(Spr) = 3000 V VR(Spr) = 2000 V
Parameter:IFM; Snubberdiode D 291 S tvj = 125°C; CS = 4 µF für vR VRM CS = 24 µF für vR VRM LS = 0,2 µH
VR(Spr) = 3000 V VR(Spr) = 2000 V
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