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Details, datasheet, quote on part number:D921S
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| Part: | D921S |
| Category: | Discrete => Thyristors => SCR (Silicon Controlled Rectifiers) => SCR/ Diode Presspacks |
| Description: | |
| Company: | Eupec GmbH & Co KG |
| Datasheet: | Download D921S datasheet File size : 39 kB |
| Request For quote: | Find where to buy D921S
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Datasheet text preview:
European PowerSemiconductor and Electronics Company
Marketing Information D 921 S 45 T
62,8 Anode A
K Kathode
3,5±
VWK January
Schnelle Gleichrichterdiode Fast Diode
D 921 S 45 T
Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung repetitive peak reverse voltage Stoßspitzensperrspannung non-repetitive peak reverse voltage Durchlaßstrom-Grenzeffektivwert / RMS forward current Dauergrenzstrom / mean forward current Stoßstrom-Grenzwert1) surge forward current1) Grenzlastintegral I²t-value Kritische periodische Ausschaltstromsteilheit critical repetitive rate of fall of on - state tC = 85°C tC = 52°C tvj = 25°C, t = 10 ms, v = 0V p R tvj = 140°C, t = 10 ms, v = 0V p R tvj = 25°C, t = 10 ms, v = 0V p R tvj = 140°C, t = 10 ms, v = 0V p R IFM = 3000 A, V = 0,67 V RM R D CS = 0,3 µF, R = /CS S (-diF/dt)com I²t IFSM tvj = +25°C...140°C VRSM IFRMSM IFAVM 4600 V 2560 A 1380 A 1630 A A 23000 A A²s 2650000 A²s 500 A/µs tvj = -40°C...140°C VRRM 4500 V
Charakteristische Werte / Characteristic values
Gleichsperrspannung / cont. direct reverse voltage Durchlaßspannung / forward voltage Schleusenspannung / threshold voltage Ersatzwiderstand / forward slope resistance Sperrstrom / reverse current Rückstromspitze / peak reverse recovery current tc = -25°C ... +85°C tvj = 140°C, F = 2500 A i tvj = 140°C tvj = 140°C tvj = 140°C, v = 0,67 V RM R R tvj = 140°C, v = VRRM R iFM = 1000 A, -di /dt = 250 A/µs F vR = 1000 V; D = D291S45T S C = 0,3 µF; R =/CS Sperrverzögerungsladung recovered charge Sanftheit Softness iFM = 1000 A, -di /dt = 250 A/µs F vR = 1000 V; D = D291S45T S C = 0,3 µF; R =/CS iFM = 1000 A, -di /dt = 250 A/µs F vR = 1000 V; D = D291S45T S C = 0,3 µF; R =/CS SR typ. 0,002 µAs Qrr 2800 µAs IRM VR(D) VF V(TO) rT iR typ. 2600 V max 2,6 V 1,4 V 0,48 m mA max. 100 mA max. 800 A
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand thermal resistance, junction to case Kühlfläche / cooling surface beidseitig / two-sided Anoden / anode Kathode / cathode Übergangs-Wärmewiderstand thermal resistance, case to heatsink Höchstzul. Sperrschichttemp. / max. junction temperat. Betriebstemperatur / operating temperature Lagertemperatur / storage temperature Kühlfläche / cooling surface beidseitig / two-sided einseitig / single-sided tvjmax tc op tstg RthCK max. 0,003 K/W max. 0,006 K/W 140 °C -40...+140 °C -40...+150 °C RthJC 0,0125 K/W 0,0228 K/W 0,0277 K/W
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage / case, see appendix Anpreßkraft /clamping force Gewicht / weight Luftstrecke / air distance Kriechstrecke / creepage distance Feuchteklasse / humidity classification Schwingfestigkeit / vibration resistance DIN 40040 f = 50 Hz F G Seite / page 1 27...45 kN typ. 850 g 20 mm 30 mm C 50 m/s²
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 1) Richtwert für obere Streubereichsgrenze / Upper limit of scatter range (standart value)
D 921 S 45 T
3000 100
8 6
i2dt [A2s]
10
7
2500 iF [A] 2000
min
max
5
IFSM [A]
4 3 2
ITSM [A]
1500
i2dt
10
8 6
10
6
1000
5 4 3
500
2
0 0,5
1,0
1,5
2,0
2,5 vF [V]
3,0
3,5
1 0,1
2
3 4 56 8
2
3 4 56 8
2
3 4 56 8
1
10 t [ms]
100
D 921 S 45 T_01
D 921 S 45 T_03
Fig. 1 On-state characteristics
tvj = tvjmax
Fig. 2 Surge current Sine halfwave
tvj = tvjmax
ITSM = f(tp) i2dt f(tp) =
Analytical elements of transient thermal impedance ZthJC for DC 0,030 ZthJC [K/W]
3
2
0,020
1 2 3 4 5
1. ZthJC [s] r [K/W] 0,00430 1,70000 0,00610 0,16200 0,00060 0,04060 0,00100 0,00940 0,00050 0,00190 0,01250 -
2. ZthJC [s] r [K/W] 0,01460 8,00000 0,00610 0,16200 0,00060 0,04060 0,00100 0,00940 0,00050 0,00190 0,02280 -
3. ZthJC [s] r [K/W] 0,01950 7,30000 0,00610 0,16200 0,00060 0,04060 0,00100 0,00940 0,00050 0,00190 0,02770 -
Analytical function:
1 nmax
ZthJC =
0,010
n=1
R
thn
(1-EXP(-t/n))
0 0,001
2 34 68
2 34 68
2 34 68
2 34 68
2 34 68
0,01
0,1
1
10 t [s]
100
D 921 S 45 T_02
Fig. 3 Transient thermal impedance 1 - Two-sided cooling 2 - Anode-sided cooling 3 - Cathode-sided cooling
ZthJC = f(t), DC
D 921 S 45 T
100
8 6
10
4 8 6 5 4 3 2 3000 A IFM = 1000 A 500 A 300 A 100 A
Qr [µAs]
5 4 3 2
3000 A
IFM= 1000 A 500 A 300 A
Qr [µAs] 103
8 6 5 4 3
100 A
10
8 6 5 4 3 2
2
102
8 6 5 4 3 2 2 3 4 5 6 8 2 3 4 5 6 8
1 10
100 -di/dt [A/µs]
1000
10 10
1
2
3
4
5
6
8
2
3
4
5
6
8
100 -di/dt [A/µs]
1000
D 921 S 45 T_04
D 921 S 45 T_05
Fig. 4 Reverse recovery charge (upper limit, ca. 98% values) Parameter: IFM
tvj = 140°C; CS = 3 µF VR 1000 V; DS = D 291 S 45 T
Fig. 5 Reverse recovery current (upper-limit, ca. 98% values) Parameter: IFM Conditions:
tvj = 140°C; CS = 3 µF VR 1000 V; DS = D 291 S 45 T
Conditions:
10
8 6
80 70 VFRM [V] 60 50 40 30
100A 25°C
Eoff [Ws]
5 4 3 2 IFM= 3000A 1000A 600A
Tvjmax
1
8 6 5 4 3 2
300A
20 10
2 3 4 5 6 8 2 3 4 5 6 8
0,1 10
100 -di/dt [A/µs]
1000
0
100
D 921 S 45 T_07
200
300
400
500 600 diF/dt [A/µs]
700
800
Fig. 6 Turn-off-losses Eoff = f(di/dt) diodes with VFmax
Parameter:IFM tvj = 140°C; CS = 4 µF DS = D 291 S 45 T
Fig. 7 Peak Forward Recovery Voltage (typical values)
Parameter: tvj
VRM = 3000 V VRM = 2000 V
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