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Details, datasheet, quote on part number:FP10R12KE3
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Technische Information / Technical Information
IGBT-Module IGBT-Modules
FP10R12KE3
Vorläufig Preliminary
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage Durchlaßstrom Grenzeffektivwert pro Chip RMS forward current per chip Gleichrichter Ausgang Grenzeffektivstrom maximum RMS current at Rectifier output Stoßstrom Grenzwert surge forward current Grenzlastintegral I2t - value Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral I2t - value tP = 1 ms VR = 0V, tp = 10ms, T vj = 125°C IF IFRM I2t 10 20 20 A A A2s T vj =25°C T C = 80°C T C = 25 °C tP = 1 ms, T C = 25°C T C =80°C VCES IC,nom. IC ICRM Ptot VGES 1200 10 15 20 55 +/- 20V V A A A W V T vj =25°C T C =80°C T C =80°C tP = 10 ms, T vj = tP = 10 ms, T vj = 25°C 25°C VRRM IFRMSM IRMSmax IFSM I2t 1600 25 36 196 158 192 125 V A A A A A2s A2s
tP = 10 ms, T vj = 150°C tP = 10 ms, T vj = 150°C
Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Brems-Chopper/ Diode Brake-Chopper Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current prepared by: Thomas Passe approved by: Ingo Graf tP = 1 ms IF IFRM 10 20 A A T vj =25°C T C = 80 °C T C = 25 °C tP = 1 ms, T C = 80°C T C = 25°C VCES IC,nom. IC ICRM Ptot VGES 1200 10 15 20 55 +/- 20V V A A A W V
date of publication: 2002-02-14 revision: 6
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Technische Information / Technical Information
IGBT-Module IGBT-Modules
FP10R12KE3
Vorläufig Preliminary
RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate
Modul Isolation/ Module Isolation Isolations-Prüfspannung insulation test voltage VISOL 2,5 kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier Durchlaßspannung forward voltage Schleusenspannung threshold voltage Ersatzwiderstand slope resistance Sperrstrom reverse current Modul Leitungswiderstand, Anschlüsse-Chip lead resistance, terminals-chip T vj = 150°C, T vj = 150°C T vj = 150°C T vj = 150°C, T C = 25°C VR = 1600 V IF = 10 A VF V(TO) rT IR RAA'+CC'
min.
-
typ.
0,95 0,78 17 5 11
max.
V V mW mA mW
Transistor Wechselrichter/ Transistor Inverter VGE = 15V, Tvj = 25°C, Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, Gate-Schwellenspannung gate threshold voltage Eingangskapazität input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC Data VCE = VGE, T vj = 25°C,
min.
IC = IC = IC = 10 A 10 A 0,3mA VGE(TO) Cies ICES IGES 600 V 100 Ohm 100 Ohm 600 V 100 Ohm 100 Ohm 600 V 100 Ohm 100 Ohm 600 V 100 Ohm 100 Ohm 600 V 100 Ohm 80 nH 600 V 100 Ohm 80 nH 100 Ohm 720 V ISC Eoff Eon tf td,off tr td,on VCE sat 4,5 -
typ.
1,9 2,3 5,5 0,6 5,0 -
max.
2,45 6,5 400 V V V nF mA nA
f = 1MHz, Tvj = 25°C VCE = 25 V, VGE = 0 V VGE = 0V, Tvj =125°C, VCE = 1200V
VCE = 0V, VGE =20V, Tvj =25°C IC = INenn, VCC =
VGE = ±15V, T vj = 25°C, RG = VGE = ±15V, T vj = 125°C, RG = IC = INenn, VCC = VGE = ±15V, T vj = 25°C, RG = VGE = ±15V, T vj = 125°C, RG = IC = INenn, VCC = VGE = ±15V, T vj = 25°C, RG = VGE = ±15V, T vj = 125°C, RG = IC = INenn, VCC = VGE = ±15V, T vj = 25°C, RG = VGE = ±15V, T vj = 125°C, RG = IC = INenn, VCC = LS = IC = INenn, VCC = LS = tP £ 10µs, VGE £ 15V, T vj£125°C, RG = VCC = VGE = ±15V, T vj = 125°C, RG = VGE = ±15V, T vj = 125°C, RG =
52 50 20 30 292 391 65 90 1,42
-
ns ns ns ns ns ns ns ns mWs
1,22
-
mWs
40
-
A
2(12)
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FP10R12KE3
Vorläufig Preliminary
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values min.
Modulinduktivität stray inductance module Modul Leitungswiderstand, Anschlüsse-Chip lead resistance, terminals-chip Diode Wechselrichter/ Diode Inverter Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current Sperrverzögerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy LsCE T C = 25°C RCC'+EE' -
typ.
14
max.
40 nH mW
min.
VGE = 0V, Tvj = 25°C, VGE = 0V, Tvj = 125°C, IF=INenn, IF = IF = 10 A 10 A 550 A/us 600 V 600 V 550 A/us 600 V 600 V 550 A/us 600 V 600 V Erec Qr IRM VF -
typ.
1,7 1,7 14 15 1 1,8 0,26 0,56
max.
2,1 V V A A µAs µAs mWs mWs
- diF/dt =
VGE = -10V, Tvj = 25°C, VR = VGE = -10V, Tvj = 125°C, VR = IF=INenn, - diF/dt = VGE = -10V, Tvj = 25°C, VR = VGE = -10V, Tvj = 125°C, VR = IF=INenn, - diF/dt = VGE = -10V, Tvj = 25°C, VR = VGE = -10V, Tvj = 125°C, VR =
Transistor Brems-Chopper/ Transistor Brake-Chopper VGE = 15V, Tvj = 25°C, Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, Gate-Schwellenspannung gate threshold voltage Eingangskapazität input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current VCE = VGE, T vj = 25°C,
min.
IC = IC = IC = 10,0 A 10,0 A 0,3mA VGE(TO) Cies VCE sat 4,5 -
typ.
1,9 2,3 5,5 0,6 5,0
max.
2,45 6,5 V V V nF mA
f = 1MHz, Tvj = 25°C VCE = 25 V, VGE = 0 V VGE = 0V, Tvj = 125°C, VCE = 1200V VCE = 0V, VGE = 20V, Tvj = 25°C
IGES
-
-
400
nA
Diode Brems-Chopper/ Diode Brake-Chopper T vj = 25°C, Durchlaßspannung forward voltage T vj = 125°C,
min.
IF = IF = 10,0 A 10,0 A VF -
typ.
1,8 1,85
max.
2,3 V V
NTC-Widerstand/ NTC-Thermistor Nennwiderstand rated resistance Abweichung von R100 deviation of R100 Verlustleistung power dissipation B-Wert B-value
min.
T C = 25°C T C = 100°C, R100 = 493 W T C = 25°C R2 = R1 exp [B(1/T2 - 1/T 1)] R25 DR/R P25 B25/50 -5
typ.
5
max.
5 20 kW % mW K
3375
3(12)
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FP10R12KE3
Vorläufig Preliminary
Thermische Eigenschaften / Thermal properties
min.
Innerer Wärmewiderstand thermal resistance, junction to heatsink Gleichr. Diode/ Rectif. Diode Trans. Wechsr./ Trans. Inverter Diode Wechsr./ Diode Inverter Trans. Bremse/ Trans. Brake Diode Bremse/ Diode Brake Innerer Wärmewiderstand thermal resistance, junction to case Gleichr. Diode/ Rectif. Diode Trans. Wechsr./ Trans. Inverter Diode Wechsr./ Diode Inverter Trans. Bremse/ Trans. Brake Diode Bremse/ Diode Brake Übergangs-Wärmewiderstand thermal resistance, case to heatsink Gleichr. Diode/ Rectif. Diode Trans. Wechsr./ Trans. Inverter Diode Wechsr./ Diode Inverter Trans. Bremse/ Trans. Brake Diode Bremse/ Diode Brake Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature T vj T op T stg lPaste=1W/m*K lgrease=1W/m*K RthCH RthJC lPaste=1W/m*K lgrease=1W/m*K RthJH -40 -40
typ.
1,9 2,6 3,7 2,6 4,0 0,2 0,6 1,3 0,6 1,4 -
max.
1,9 2,2 2,7 2,2 2,9 150 125 125 K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W °C °C °C
Mechanische Eigenschaften / Mechanical properties
Innere Isolation internal insulation CTI comperative tracking index Anpreßkraft f. mech. Befestigung pro Feder mounting force per clamp Gewicht weight Kontakt - Kühlkörper terminal to heatsink Kriechstrecke creeping distance Luftstrecke clearance Terminal - Terminal terminal to terminal Kriechstrecke creeping distance Luftstrecke clearance F Al2O3 225 40...80 36 13,5 12 7,5 7,5 N
G
g mm mm mm mm
4(12)
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FP10R12KE3
Vorläufig Preliminary
IC = f (VCE)
VGE = 15 V
Ausgangskennlinienfeld Wechselr. (typisch) Output characteristic Inverter (typical)
20 18 16 14 12 Tj = 25°C Tj = 125°C
IC [A]
10 8 6 4 2 0 0,00
0,50
1,00
1,50
2,00
2,50
3,00
3,50
VCE [V]
Ausgangskennlinienfeld Wechselr. (typisch) Output characteristic Inverter (typical)
20 18 16 14 12 9V 11V 13V 15V 17V 10 8 6 4 2 0 0,00 19V
IC = f (VCE)
Tvj = 125°C
IC [A]
0,50
1,00
1,50
2,00
2,50
3,00
3,50
VCE [V]
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