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Details, datasheet, quote on part number:FZ1000R25KF1
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Datasheet text preview:
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1000 R 25 KF1
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode 2 I t - value, Diode Isolations-Prüfspannung insulation test voltage tP = 1 ms TC = 80 °C TC = 25 °C tP = 1 ms, TC = 80°C VCES IC,nom. IC ICRM 2500 1000 1600 2000 V A A A
TC=25°C, Transistor
Ptot
10,4
kW
VGES
+/- 20V
V
IF
1000
A
IFRM
2000
A
VR = 0V, t p = 10ms, T Vj = 125°C
It
2
400
kA s
2
RMS, f = 50 Hz, t = 1 min.
VISOL
5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 1000A, V GE = 15V, Tvj = 25°C IC = 1000A, V GE = 15V, Tvj = 125°C IC = 80mA, VCE = VGE, Tvj = 25°C VGE(th) VCE sat
min.
4,3
typ.
3,0 3,8 5,3
max.
3,5 4,3 6,3 V V V
VGE = -15V ... +15V
QG
-
18
-
µC
f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V
Cies
-
95
-
nF
f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V
Cres
-
8
-
nF
VCE = 2500V, V GE = 0V, Tvj = 25°C
ICES
-
-
20
mA
VCE = 0V, V GE = 20V, Tvj = 25°C
IGES
-
-
400
nA
prepared by: Oliver Schilling approved by: Thomas Schütze
date of publication: 01.09.2001 revision: 3
1
FZ101@3.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1000 R 25 KF1
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 1000A, V CE = 1200V VGE = ±15V, RG = 1,3, CGE=136nF, Tvj = 25°C, VGE = ±15V, RG = 1,3, CGE=136nF, Tvj = 125°C, Anstiegszeit (induktive Last) rise time (inductive load) IC = 1000A, V CE = 1200V VGE = ±15V, RG = 1,3, CGE=136nF, Tvj = 25°C, VGE = ±15V, RG = 1,3, CGE=136nF, Tvj = 125°C, Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) IC = 1000A, V CE = 1200V VGE = ±15V, RG = 2,7, CGE=136nF, Tvj = 25°C, VGE = ±15V, RG = 2,7, CGE=136nF, Tvj = 125°C, Fallzeit (induktive Last) fall time (inductive load) IC = 1000A, V CE = 1200V VGE = ±15V, RG = 2,7, CGE=136nF, Tvj = 25°C, VGE = ±15V, RG = 2,7, CGE=136nF, Tvj = 125°C, Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC Data Modulinduktivität stray inductance module Modulleitungswiderstand, Anschlüsse - Chip module lead resistance, terminals - chip IC = 1000A, V CE = 1200V, V GE = ±15V RG = 1,3, CGE=136nF, Tvj = 125°C , L S = 60nH IC = 1000A, V CE = 1200V, V GE = ±15V RG = 2,7, CGE=136nF, Tvj = 125°C , L S = 60nH tP 10µsec, V GE 15V TVj125°C, VCC=1200V , VCEmax=VCES -LsCE ·dI/dt ISC LsCE 4000 12 A nH Eoff 1000 mWs Eon 1400 mWs tf 0,2 0,2 µs µs td,off 2,2 2,2 µs µs tr 0,25 0,25 µs µs td,on 1,4 1,5 µs µs
min.
typ.
max.
RCC´+EE´
-
0,19
-
m
Diode / Diode
Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current IF = 1000A, V GE = 0V, Tvj = 25°C IF = 1000A, V GE = 0V, Tvj = 125°C IF = 1000A, - diF/dt = 4000A/µs VR = 1200V, VGE = -10V, T vj = 25°C VR = 1200V, VGE = -10V, T vj = 125°C Sperrverzögerungsladung recovered charge IF = 1000A, - diF/dt = 4000A/µs VR = 1200V, VGE = -10V, T vj = 25°C VR = 1200V, VGE = -10V, T vj = 125°C Abschaltenergie pro Puls reverse recovery energy IF = 1000A, - diF/dt = 4000A/µs VR = 1200V, VGE = -10V, T vj = 25°C VR = 1200V, VGE = -10V, T vj = 125°C Erec Qr IRM VF
min.
-
typ.
2,3 2,3
max.
2,7 2,7 V V
-
950 1000
-
A A
-
520 900
-
µAs µAs
-
340 650
-
mWs mWs
2
FZ101@3.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1000 R 25 KF1
Thermische Eigenschaften / Thermal properties
min.
Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur Sperrschicht junction operation temperature Lagertemperatur storage temperature Schaltvorgänge IGBT(RBSOA);Diode(SOA) switching operation IGBT(RBSOA);Diode(SOA) Transistor / transistor, DC Diode/Diode, DC pro Modul / per Module Paste 1 W/m*K / grease 1 W/m*K RthCK RthJC -
typ.
0,008
max.
0,012 0,024 K/W K/W K/W
Tvj
-
-
150
°C
Tvj,op
-40
-
125
°C
Tstg
-40
-
125
°C
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage case, see appendix Material Modulbodenplatte material of module baseplate Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque Gewicht weight terminals M4 terminals M8 G 1000 M1 AlSiC
AlN
32
mm
19,1
mm
>400 5 Nm
M2
2 8 - 10
Nm Nm g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.
3
FZ101@3.xls
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