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Details, datasheet, quote on part number:FZ600R65KF1
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Datasheet text preview:
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 600 R 65 KF1
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Isolations-Prüfspannung insulation test voltage Teilentladungs Aussetzspannung partial discharge extinction voltage tP = 1 ms Tvj=125°C Tvj=25°C Tvj=-40°C TC = 80 °C TC = 25 °C tP = 1 ms, T C = 80°C VCES IC,nom. IC ICRM 6500 6300 5800 600 1200 1200 V A A A
TC=25°C, Transistor
Ptot
11,4
kW
VGES
+/- 20V
V
IF
600
A
IFRM
1200
A
VR = 0V, tp = 10ms, T Vj = 125°C
I2t
165
k A2s
RMS, f = 50 Hz, t = 1 min.
VISOL
10,2
kV
RMS, f = 50 Hz, QPD typ. 10pC (acc. To IEC 1287)
VISOL
5,1
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazität input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 600A, VGE = 15V, Tvj = 25°C IC = 600A, VGE = 15V, Tvj = 125°C IC = 100mA, VCE = VGE, Tvj = 25°C VGE(th) VCE sat
min.
6,4
typ.
4,3 5,3 7,0
max.
4,9 5,9 8,1 V V V
VGE = -15V ... +15V
QG
-
8,4
-
µC
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V VCE = 6300V, VGE = 0V, Tvj = 25°C VCE = 6500V, VGE = 0V, Tvj = 125°C VCE = 0V, VGE = 20V, Tvj = 25°C
Cies
-
84 0,6 60 -
-
nF mA mA nA
ICES
-
-
IGES
-
400
prepared by: Dr. Oliver Schilling approved by: Dr. Schütze 2002-07-05
date of publication: 2002-07-05 revision/Status: Series 1
1
FZ 600 R65 KF1 (final1).xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 600 R 65 KF1
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 600A, VCE = 3600V VGE = ±15V, RGon = 4,3, CGE=68nF, Tvj = 25°C, VGE = ±15V, RGon = 4,3, CGE=68nF, Tvj = 125°C, Anstiegszeit (induktive Last) rise time (inductive load) IC = 600A, VCE = 3600V VGE = ±15V, RGon = 4,3, CGE=68nF, Tvj = 25°C, VGE = ±15V, RGon = 4,3, CGE=68nF, Tvj = 125°C, Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) IC = 600A, VCE = 3600V VGE = ±15V, RGoff = 25, CGE=68nF, Tvj = 25°C, VGE = ±15V, RGoff = 25, CGE=68nF, Tvj = 125°C, Fallzeit (induktive Last) fall time (inductive load) IC = 600A, VCE = 3600V VGE = ±15V, RGoff = 25, CGE=68nF, Tvj = 25°C, VGE = ±15V, RGoff = 25, CGE=68nF, Tvj = 125°C, Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC Data Modulinduktivität stray inductance module Modulleitungswiderstand, Anschlüsse - Chip module lead resistance, terminals - chip IC = 600A, VCE = 3600V, VGE = ±15V RGon = 4,3, CGE=68nF, Tvj = 125°C , L = 280nH IC = 600A, VCE = 3600V, VGE = ±15V RGoff = 25, CGE=68nF, Tvj = 125°C , L = 280nH tP 10µsec, VGE 15V, acc to appl.note 2002/05 TVj125°C, VCC=4400V, VCEmax=VCES -LCE ·di/dt ISC LCE 3000 18 A nH Eoff 3500 mJ Eon 5900 mJ tf 0,40 0,50 µs µs td,off 5,50 6,00 µs µs tr 0,37 0,40 µs µs td,on 0,75 0,72 µs µs
min.
typ.
max.
RCC´+EE´
-
0,12
-
m
Diode / Diode
Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current IF = 600A, VGE = 0V, Tvj = 25°C IF = 600A, VGE = 0V, Tvj = 125°C IF = 600A, - diF/dt = 2000A/µs VR = 3600V, VGE = -10V, Tvj = 25°C VR = 3600V, VGE = -10V, Tvj = 125°C Sperrverzögerungsladung recovered charge IF = 600A, - diF/dt = 2000A/µs VR = 3600V, VGE = -10V, Tvj = 25°C VR = 3600V, VGE = -10V, Tvj = 125°C Abschaltenergie pro Puls reverse recovery energy IF = 600A, - diF/dt = 2000A/µs VR = 3600V, VGE = -10V, Tvj = 25°C VR = 3600V, VGE = -10V, Tvj = 125°C Erec Qr IRM VF
min.
3,0
typ.
3,8 3,9
max.
4,6 4,7 V V
-
800 1000
-
A A
-
550 1050
-
µC µC
-
660 1600
-
mJ mJ
2
FZ 600 R65 KF1 (final1).xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 600 R 65 KF1
Thermische Eigenschaften / Thermal properties
min.
Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur Sperrschicht junction operation temperature Lagertemperatur storage temperature Schaltvorgänge IGBT(RBSOA);Diode(SOA) switching operation IGBT(RBSOA);Diode(SOA) Transistor / transistor, DC Diode/Diode, DC pro Modul / per Module Paste 1 W/m*K / grease 1 W/m*K RthCK RthJC -
typ.
0,006
max.
0,011 0,021 K/W K/W K/W
Tvj, max
-
-
150
°C
Tvj,op
-40
-
125
°C
Tstg
-40
-
125
°C
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque Gewicht weight Schraube /screw M6 M AlN
56
mm
26
mm
>600 5 Nm
Anschlüsse / terminals M4 Anschlüsse / terminals M8
M
2 8 - 10 1400
Nm Nm g
G
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.
3
FZ 600 R65 KF1 (final1).xls
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