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Details, datasheet, quote on part number:FZ800R33KF2
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Datasheet text preview:
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 800 R 33 KF2
vorläufiges Datenblatt preliminary data sheet
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Spitzenverlustleistung der Diode maximum power dissipation diode Isolations-Prüfspannung insulation test voltage Teilentladungs-Aussetzspannung partial discharge extinction voltage tP = 1 ms Tj = 25°C Tj = -25°C TC = 80°C TC = 25 °C tP = 1 ms, TC = 80°C VCES 3300 3300 800 1300 1600 V
IC,nom. IC ICRM
A A A
TC=25°C, Transistor
Ptot
9,6
kW
VGES
+/- 20V
V
IF
800
A
IFRM
1600
A
VR = 0V, tp = 10ms, TVj = 125°C
I2t
222.200
As
2
Tj = 125°C
PRQM
800
kW
RMS, f = 50 Hz, t = 1 min.
VISOL
6.000
V
RMS, f = 50 Hz, QPD 10 pC (acc. to IEC 1287)
VISOL
2.600
V
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Gateladung gate charge Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 800A, VGE = 15V, Tvj = 25°C IC = 800A, VGE = 15V, Tvj = 125°C IC = 80 mA, VCE = VGE, Tvj = 25°C VGE(th) VCE sat
min.
4,2
typ.
3,40 4,30 5,1
max.
4,25 6,0 V V V
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Cies
-
100
-
nF
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Cres
-
5,4
-
nF
VGE = -15V ... + 15V, VCE = 1800V VCE = 3300V, VGE = 0V, Tvj = 25°C VCE = 3300V, VGE = 0V, Tvj = 125°C VCE = 0V, VGE = 20V, Tvj = 25°C
QG ICES
-
15 20 40 -
400
µC µA mA nA
IGES
-
prepared by: Jürgen Göttert approved by:H. Ludwig ; 27.01.99
date of publication : 22.12.98 revision: 2
1 (9)
DB_FZ800R33KF2_V3.xls 28.01.99
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 800 R 33 KF2
vorläufiges Datenblatt preliminary data sheet
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 800 A, VCC = 1800V VGE = ±15V, RG = 1,8 , CGE = 150nF, Tvj = 25°C VGE = ±15V, RG = 1,8 , CGE = 150nF, Tvj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) IC = 800 A, VCC = 1800V VGE = ±15V, RG = 1,8 , CGE = 150nF, Tvj = 25°C VGE = ±15V, RG = 1,8 , CGE = 150nF, Tvj = 125°C Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) IC = 800 A, VCC = 1800V VGE = ±15V, RG = 1,8 , CGE = 150nF, Tvj = 25°C VGE = ±15V, RG = 1,8 , CGE = 150nF, Tvj = 125°C Fallzeit (induktive Last) fall time (inductive load) IC = 800 A, VCC = 1800V VGE = ±15V, RG = 1,8 , CGE = 150nF, Tvj = 25°C VGE = ±15V, RG = 1,8 , CGE = 150nF, Tvj = 125°C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC Data Modulinduktivität stray inductance module Modul-Leitungswiderstand, Anschlüsse - Chip lead resistance, terminals - chip T = 25°C IC = 800 A, VCC = 1800V, VGE = 15V RG = 1,8 , CGE = 150, nF, Tvj = 125°C, LS = 40nH IC = 800 A, VCC = 1800V, VGE = 15V RG = 1,8 , CGE = 150, nF, Tvj = 125°C, LS = 40nH tP 10µsec, VGE 15V TVj125°C, VCC=2500V, VCEmax=VCES -LsCE ·dI/dt ISC LsCE 4000 12 A nH Eoff 1020 mWs Eon 1920 mWs tf 200 200 ns ns td,off 1550 1700 ns ns tr 250 270 ns ns td,on 370 350 ns ns
min.
typ.
max.
RCC'+EE'
-
0,19
-
m
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current IF = 800 A, VGE = 0V, Tvj = 25°C IF = 800 A, VGE = 0V, Tvj = 125°C IF = 800 A, - diF/dt = 2500 A/µsec VR = 1800V, VGE = -10V, Tvj = 25°C VR = 1800V, VGE = -10V, Tvj = 125°C Sperrverzögerungsladung recovered charge IF = 800 A, - diF/dt = 2500 A/µsec VR = 1800V, VGE = -10V, Tvj = 25°C VR = 1800V, VGE = -10V, Tvj = 125°C Abschaltenergie pro Puls reverse recovery energy IF = 800 A, - diF/dt = 2500 A/µsec VR = 1800V, VGE = -10V, Tvj = 25°C VR = 1800V, VGE = -10V, Tvj = 125°C Erec 490 1000 mWs mWs Qr 500 900 µAs µAs IRM 650 700 A A VF
min.
-
typ.
2,80 2,80
max.
3,50 V V
2 (9)
DB_FZ800R33KF2_V3.xls 28.01.99
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 800 R 33 KF2
vorläufiges Datenblatt preliminary data sheet
Thermische Eigenschaften / Thermal properties
min.
Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode/Diode, DC pro Modul / per module Paste = 1 W/m*K / grease = 1 W/m*K RthCK RthJC -
typ.
0,006
max.
0,013 0,026 K/W K/W K/W
Tvj
-
-
150
°C
Top
-40
-
125
°C
Tstg
-40
-
125
°C
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage case, see appendix Material Modulgrundplatte material of module baseplate Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque Gewicht weight terminals M4 terminals M8 G M1 AlSiC
AlN
32,2
mm
19,1
mm
> 400 5 Nm
M2
2 8 .. 10 1000
Nm Nm g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.
3 (9)
DB_FZ800R33KF2_V3.xls 28.01.99
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