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Details, datasheet, quote on part number:PT91-21B/TR10
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Datasheet text preview:
EVERLIGHT ELECTRONICS CO., LTD.
DEVICE NUMBER : ECN : DTT-091-001 REV : PAGE : 2.0 1/7
1.9mm ``Z-Bend'' Lead Phototransistor
MODEL NO : Features :
Fast response time High photo sensitivity Small junction capacitance
PT91-21B/TR10
Description :
PT91-21B/TR10 is a phototransistor in miniature SMD package which is molded in a black transparent plastic with spherical top view lens .The device is spectrally matched to infrared emitting diode.
Applications :
Optoelectronic switch VCR ,Video Camera Floppy disk drive Infrared applied system
CHIP PART NO. PT MATERIAL Silicon LENS COLOR Black
EVERLIGHT ELECTRONICS CO., LTD.
DEVICE NUMBER : ECN : DTT-091-001 REV : PAGE : 2.0 2/7
1.9mm ``Z-Bend'' Lead Phototransistor
MODEL NO : PT91-21B/TR10
Package Dimensions :
Notes :
1.All dimensions are in millimeter. 2.General Tolerance: 0.1mm 3.Lens colorBlack transparent. 4.Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for above specification. 5.These specification sheets include materials protected under copyright of EVERLIGHT corporation . Please don't reproduce or cause anyone to reproduce them without EVERLIGHT's consent. 6.When using this product , please observe the absolute maximum ratings and the instructions for use outlined in these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets.
EVERLIGHT ELECTRONICS CO., LTD.
DEVICE NUMBER : ECN : DTT-091-001 REV : PAGE : 2.0 3/7
1.9mm ``Z-Bend'' Lead Phototransistor
MODEL NO : PT91-21B/TR10
Absolute Maximum Ratings at Ta = 25 Parameter Collector-Emitter Voltage Emitter-Collector-Voltage Collector Current Operating Temperature Storage Temperature Lead Soldering Temperature Power Dissipation at(or below) 25Free Air Temperature Symbol V CEO V ECO IC Topr Tstg Tsol Pc Rating 30 5 20 -25 ~ +85 -40 ~ +85 260 75 Unit V V mA Notice
Electronic Optical Characteristics : Parameter Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Saturation Voltage Rise Time Fall Time Collector Dark Current On State Collector Current Wavelength of Peak Sensitivity Rang of Spectral Bandwidth Symbol B V CEO B V ECO VCE(sat) tr tf ICEO IC(on) P Min. 30 5 ------------1 .0 ------Typ. ---------15 15 ---1 .5 980 770--1200 Max. ------0 .4 ------100 ---------Unit V V V S nA mA nm nm Condition IC=100A Ee=0mW /c IE=100A Ee=0mW /c IC=2mA Ee=1mW /c VCE=5V IC=1mA RL=1000
Ee=0mW /c VCE=20V Ee=1mW /c VCE=5V -------
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