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Part: EFA960B
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> JFETs (Junction-FETs)
-> Power FETs
-> GaAs
Description: 8-12V Low Distortion GAAS Power Fet
Company: Excelics Semiconductor, Inc.
Datasheet: Download EFA960B datasheet File size : 513 kB
Request For quote: Find where to buy EFA960B
Datasheet text preview:
Excelics
DATA SHEET
· · · · · · +36.5dBm TYPICAL OUTPUT POWER 16.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 9600 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 160mA PER BIN RANGE
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EFA960B
Low Distortion GaAs Power FET
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ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Gain at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% Idss f= 2GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=25mA
Chip Thickness: 50 ± 10 microns (with > 20 microns Gold Plated Heat Sink (PHS) ) All Dimensions In Microns
MIN 35.0 15.0
TYP 36.5 36.5 16.5 11.5 34
MAX
UNIT dBm dB %
1600 1100
2720 1450 -2.0
3520
mA mS
-3.5
V V V
o
Drain Breakdown Voltage Igd=9.6mA Source Breakdown Voltage Igs=9.6mA Thermal Resistance (Au-Sn Eutectic Attach)
-12 -7
-15 -14 5
C/W
MAXIMUM RATINGS AT 25OC SYMBOLS
Vds Vgs Ids Igsf Pin Tch Tstg
PARAMETERS
Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature
ABSOLUTE 1
12V -8V Idss 240mA 35dBm 175 C -65/175oC
o
CONTINUOUS2
8V -4V 2.8A 40mA @3dB Compression 150oC -65/150oC
Total Power Dissipation 27 W 23 W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EFA960B
DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
FREQ (GHz) 0.500 1.000 1.500 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 6.500 7.000 7.500 8.000 8.500 9.000 9.500 10.000
Note:
--- S11 --MAG ANG 0.963 -150.4 0.962 -165.8 0.961 -171.5 0.961 -174.6 0.962 -176.7 0.962 -178.3 0.962 -179.6 0.962 179.2 0.963 178.2 0.963 177.3 0.964 176.4 0.964 175.6 0.965 174.8 0.965 174.1 0.966 173.3 0.966 172.6 0.967 171.9 0.968 171.2 0.968 170.5 0.969 169.8
8V, 1/2 Idss --- S21 --MAG ANG 6.232 100.8 3.195 89.5 2.140 83.1 1.608 77.9 1.287 73.2 1.072 68.9 0.919 64.7 0.803 60.7 0.713 56.8 0.641 53.0 0.582 49.3 0.532 45.8 0.490 42.3 0.453 38.9 0.421 35.7 0.392 32.5 0.367 29.5 0.344 26.6 0.324 23.7 0.305 21.0
--- S12 --MAG ANG 0.015 20.2 0.015 18.3 0.016 21.0 0.016 24.7 0.017 28.6 0.018 32.5 0.018 36.2 0.019 39.7 0.020 42.9 0.021 45.9 0.022 48.6 0.024 51.0 0.025 53.2 0.026 55.2 0.028 56.9 0.029 58.5 0.031 59.9 0.033 61.1 0.034 62.2 0.036 63.2
--- S22 --MAG ANG 0.741 -176.3 0.750 -177.8 0.753 -178.3 0.755 -178.5 0.758 -178.5 0.761 -178.5 0.764 -178.6 0.768 -178.6 0.772 -178.6 0.776 -178.6 0.781 -178.7 0.786 -178.8 0.791 -178.9 0.797 -179.0 0.802 -179.2 0.808 -179.4 0.814 -179.6 0.819 -179.8 0.825 179.9 0.831 179.6
The data included 0.7 mils diameter Au bonding wires: 4 gate wires, 20 mils each; 4 drain wires, 12 mils each; 10 source wires, 7 mils each.
Others parts begin by ef
EF-1 EF-2 EF-3 EF-4
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