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Part: EFA960C-180F
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> JFETs (Junction-FETs)
-> Power FETs
-> GaAs
Description: Low Distortion GAAS Power Fets
Company: Excelics Semiconductor, Inc.
Datasheet: Download EFA960C-180F datasheet File size : 513 kB
Request For quote: Find where to buy EFA960C-180F
Datasheet text preview:
Excelics
PRELIMINARY DATA SHEET
EFA960C-180F
Low Distortion GaAs Power FET
· · · · · · NON-HERMETIC 180MIL METAL FLANGE PACKAGE +36.5dBm TYPICAL OUTPUT POWER 16.5dB TYPICAL POWER GAIN AT 2GHz 0.5 X 9600 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY
All Dimensions In Mils
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS P1dB G 1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Gain at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=2GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=25mA
MIN 35.0 14.5
TYP 36.5 36.5 16.0 11.0 34
MAX
UNIT dBm dB %
1600 1100
2720 1450 -2.0
3520
mA mS
-3.5
V V V
o
Drain Breakdown Voltage Igd=9.6mA Source Breakdown Voltage Igs=9.6mA Thermal Resistance (Au-Sn Eutectic Attach)
-12 -7
-15 -14 6*
C/W
* Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS
Vds Vgs Ids Igsf Pin Tch Tstg
PARAMETERS
Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature
ABSOLUTE1
12V -8V 2.9A 240mA 35dBm 175oC -65/175oC
CONTINUOUS2
8V -4V 2.4A 20mA @ 3dB Compression 150oC -65/150oC
Total Power Dissipation 23W 19W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EFA960C-180F
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
8V, 1/2 Idss Freq GHz 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 S11 Mag 0.976 0.971 0.948 0.934 0.929 0.908 0.893 0.868 0.847 0.835 0.830 0.823 0.807 0.807 0.824 0.851 0.882 0.901 0.890 0.893 S11 Ang -158.7 -176.4 176.1 168.5 162.1 155.3 146.5 134.3 119.2 101.9 84.3 65.8 46.7 21.5 -7.2 -33.9 -54.9 -74.3 -88.9 -104.2 S21 Mag 5.862 3.028 2.702 2.132 1.853 1.736 1.728 1.740 1.751 1.735 1.700 1.661 1.632 1.603 1.473 1.259 1.047 0.876 0.733 0.666 S21 Ang 93.1 77.0 69.3 60.0 51.1 41.5 29.7 14.9 -2.0 -20.3 -38.6 -57.7 -77.4 -100.2 -124.5 -147.7 -167.0 174.5 160.0 144.8 S12 Mag 0.010 0.012 0.018 0.021 0.025 0.030 0.038 0.047 0.056 0.065 0.074 0.083 0.089 0.096 0.095 0.087 0.078 0.066 0.072 0.068 S12 Ang 22.1 22.3 26.4 27.2 26.9 24.1 18.8 7.8 -3.7 -17.5 -31.2 -46.7 -63.4 -81.6 -101.8 -119.4 -136.7 -146.5 -158.3 -177.5 S22 Mag 0.822 0.808 0.743 0.733 0.704 0.671 0.626 0.562 0.503 0.453 0.415 0.389 0.391 0.386 0.420 0.481 0.574 0.660 0.659 0.673 S22 Ang 179.7 176.5 169.2 167.2 165.4 163.3 158.0 149.5 136.4 119.1 100.0 79.4 59.1 35.4 7.6 -17.7 -36.3 -47.1 -54.7 -64.4
Others parts begin by ef
EF-1 EF-2 EF-3 EF-4
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