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Part: EFA960C-CPO83
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> JFETs (Junction-FETs)
-> Power FETs
-> GaAs
Description: Low Distortion GAAS Power Fets
Company: Excelics Semiconductor, Inc.
Datasheet: Download EFA960C-CPO83 datasheet File size : 513 kB
Request For quote: Find where to buy EFA960C-CPO83
Datasheet text preview:
Excelics
PRELIMINARY DATA SHEET
EFA960C-CP083
Low Distortion GaAs Power FET
· · · · · · NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +36.0dBm TYPICAL OUTPUT POWER 15.5dB TYPICAL POWER GAIN AT 2GHz 0.5 X 9600 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY
O
ELECTRICAL CHARACTERISTICS (Ta = 25 C)
SYMBOLS P1dB G 1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Gain at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=2GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=25mA
All Dimensions In Mils Tolerance ±3
MIN 34.5 14.0
TYP 36.0 36.0 15.5 10.5 30
MAX
UNIT dBm dB %
1600 1100
2720 1450 -2.0
3520
mA mS
-3.5
V V V
o
Drain Breakdown Voltage Igd=9.6mA Source Breakdown Voltage Igs=9.6mA Thermal Resistance (Au-Sn Eutectic Attach)
-12 -7
-15 -14 6*
C/W
* Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS
Vds Vgs Ids Igsf Pin Tch Tstg
PARAMETERS
Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature
ABSOLUTE1
12V -8V 2.9A 240mA 35dBm 175oC -65/175oC
CONTINUOUS2
8V -4V 2.4A 20mA @ 3dB Compression 150oC -65/150oC
Total Power Dissipation 23W 19W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EFA960C-CP083
PRILIMINARY DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
8V, 1/2 Idss FREQ (GHz) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 --- S11 --MAG ANG 0.983 -155.2 0.986 -175.0 0.936 174.1 0.929 166.2 0.923 160.3 0.920 154.5 0.912 147.2 0.898 138.0 0.888 126.1 0.879 113.1 0.870 99.9 0.862 87.6 0.860 75.1 0.841 63.8 0.829 48.5 0.828 28.5 0.849 8.2 0.872 -8.9 0.884 -21.1 0.891 -31.7 --- S21 --MAG ANG 6.432 94.5 3.285 76.9 2.855 68.2 2.194 58.4 1.835 49.4 1.643 40.4 1.532 30.1 1.466 18.3 1.402 5.2 1.339 -8.7 1.271 -22.4 1.212 -35.9 1.176 -46.6 1.194 -59.9 1.217 -77.1 1.171 -96.3 1.060 -115.1 0.921 -132.2 0.794 -145.7 0.734 -153.5 --- S12 --MAG ANG 0.012 24.2 0.013 25.8 0.020 29.5 0.023 29.4 0.026 29.6 0.031 28.3 0.038 24.5 0.045 17.6 0.052 9.6 0.059 0.6 0.066 -9.4 0.073 -19.0 0.081 -25.3 0.095 -34.5 0.110 -48.8 0.118 -65.3 0.122 -80.8 0.117 -97.3 0.111 -109.9 0.115 -118.2 --- S22 --MAG ANG 0.810 178.8 0.779 175.0 0.739 168.6 0.736 164.9 0.725 161.7 0.703 158.0 0.679 152.7 0.656 145.7 0.634 136.8 0.624 127.2 0.621 117.7 0.609 108.0 0.571 104.6 0.560 92.9 0.543 75.7 0.532 55.1 0.555 33.4 0.606 15.9 0.623 4.5 0.679 0.5
Others parts begin by ef
EF-1 EF-2 EF-3 EF-4
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