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Part: EFB025A
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> JFETs (Junction-FETs)
-> Power FETs
-> GaAs
Description: 6-10V General Purpose GAAS Power Fet
Company: Excelics Semiconductor, Inc.
Datasheet: Download EFB025A datasheet File size : 513 kB
Request For quote: Find where to buy EFB025A
Datasheet text preview:
Excelics
PRELIMINARY DATA SHEET
EFB025A
420 50 104
General Purpose GaAs FET
· · · · · · · +18.5dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 12GHz TYPICAL 1.3 dB NOISE FIGURE AND 11 dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 5mA PER BIN RANGE
D
D
48 260
40
S
G
G
S
90
59
50
78
Chip Thickness: 75 ± 13 microns All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS P1dB G1dB NF GA Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=6V, Ids=50% Idss Gain at 1dB Compression Vds=6V, Ids=50% Idss Noise Figure Vds=3V,Ids=15mA Associated Gain Vds=3V,Ids=15mA Transconductance Pinch-off Voltage f=12GHz f=18GHz f=12GHz f=18GHz f=12GHz f=12GHz 35 40 -5.5 -5.5 9 MIN 17 TYP 18.5 18.5 11 9 1.3 11 65 60 -1.5 -8.5 -8.5 155
o
MAX
UNIT dBm dB dB dB
Saturated Drain Current Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=1.0mA
105 -3.0
mA mS V V V C/W
Drain Breakdown Voltage Igd=100uA Source Breakdown Voltage Igs=100uA Thermal Resistance (Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS
Vds Vgs Ids Drain-Source Voltage Gate-Source Voltage Drain Current
ABSOLUTE1
10V -6V Idss
CONTINUOUS2
6V -4V
Idss
Forward Gate Current 6mA 1mA Igsf Input Power 16dBm @ 3dB Compression Pin o Channel Temperature 175 C 150oC Tch Storage Temperature -65/175oC -65/150oC Tstg Total Power Dissipation 880mW 730mW Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EFB025A
PRELIMINARY DATA SHEET
General Purpose GaAs FET
S-PARAMETERS
6V,Idss
FREQ (GHz) --- S11 --MAG ANG --- S21 --MAG ANG --- S12 --MAG ANG --- S22 --MAG ANG
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0
Note:
0.959 0.938 0.912 0.886 0.867 0.823 0.808 0.795 0.769 0.749 0.743 0.727 0.731 0.738 0.705 0.705 0.731 0.719 0.694 0.708 0.716 0.696 0.693 0.692 0.687 0.710
-15.7 -30.7 -44.3 -56.8 -68.2 -78.5 -87.9 -97.9 -107.9 -115.8 -124.1 -131.1 -137.8 -145.6 -152.3 -155.6 -160.8 -168.3 -171.2 -173.8 -177.8 176.6 172.5 168.0 163.5 160.7
5.152 5.002 4.745 4.460 4.277 3.995 3.699 3.543 3.371 3.140 2.971 2.771 2.613 2.541 2.364 2.141 2.122 2.091 1.896 1.834 1.894 1.782 1.673 1.653 1.531 1.520
166.7 155.2 144.2 134.8 126.5 116.6 108.9 102.3 93.9 86.7 80.1 73.4 68.3 61.9 54.0 50.7 47.6 39.2 34.1 33.0 27.1 19.6 15.8 10.2 4.4 0.4
0.018 0.034 0.048 0.060 0.071 0.078 0.084 0.091 0.097 0.098 0.100 0.101 0.101 0.105 0.103 0.098 0.103 0.107 0.102 0.104 0.114 0.111 0.110 0.113 0.109 0.113
62.0 62.8 57.5 52.3 48.0 41.7 36.8 32.9 27.4 22.5 19.3 15.5 12.7 9.2 4.2 4.6 4.6 -0.7 -2.3 -0.9 -3.0 -6.9 -7.4 -8.9 -10.7 -11.1
0.655 0.640 0.628 0.609 0.580 0.563 0.565 0.515 0.469 0.470 0.444 0.440 0.439 0.352 0.387 0.490 0.412 0.327 0.473 0.472 0.328 0.406 0.431 0.401 0.473 0.439
-6.9 -15.2 -24.3 -28.9 -34.2 -45.7 -48.7 -49.9 -60.5 -67.9 -71.6 -79.6 -77.4 -83.7 -108.7 -99.8 -85.9 -116.4 -122.7 -103.1 -115.7 -140.1 -134.3 -147.1 -156.4 -150.6
The data included 0.7 mils diameter Au bonding wires: 2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 4 source wires, 7 mils each.
Others parts begin by ef
EF-1 EF-2 EF-3 EF-4
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