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Part: EFC120B-100F
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> JFETs (Junction-FETs)
-> Power FETs
-> GaAs
Description: 10-14V Low Distortion GAAS Power Fet
Company: Excelics Semiconductor, Inc.
Datasheet: Download EFC120B-100F datasheet File size : 513 kB
Request For quote: Find where to buy EFC120B-100F
Datasheet text preview:
Excelics
DATA SHEET
EFC120B-100F
10 Rad. 63 Dia.
G D
Low Distortion GaAs Power FET
· · · · · · · HERMETIC 100mil CERAMIC FLANGE PACKAGE +28.0dBm TYPICAL OUTPUT POWER HIGH BVgd FOR 10V BIAS 9.0dB TYPICAL POWER GAIN AT 8GHz 0.3 X 1200 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
98
30 34
24
98 24
79 35
256 TYP.
256 TYP.
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS P1dB G 1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=10V, Ids=50% Idss Gain at 1dB Compression Vds=10V, Ids=50% Idss Gain at 1dB Compression Vds=10V, Ids=50% Idss Saturated Drain Current Transconductance Pinch-off Voltage f = 8GHz f = 12GHz f = 8GHz f = 12GHz f = 12GHz
All Dimensions In mils
MIN 26.0 4.0
TYP 28.0 28.0 9.0 6.0 30
MAX
UNIT dBm dB %
Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=3.0mA
160 100
260 140 -2.5
360
mA mS
-4.0
V V V
o
Drain Breakdown Voltage Igd=1.2mA Source Breakdown Voltage Igs=1.2mA Thermal Resistance
-15 -10
-20 -17 43*
C/W
*Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Drain-Source Voltage 14V 10V Vds Gate-Source Voltage -8V -4.5V Vgs Drain Current Idss 270mA Ids Forward Gate Current 30mA 5mA Igsf Input Power 26dBm @ 3dB Compression Pin o Channel Temperature 175 C 150oC Tch Storage Temperature -65/175oC -65/150oC Tstg Total Power Dissipation 3.2W 2.7W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EFC120B-100F
DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
10V, 1/2 Idss
FREQ GHz --- S11 --Mag Ang --- S21 --Mag Ang --- S12 --Mag Ang --- S22 --Mag Ang
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0
1.015 0.910 0.871 0.836 0.810 0.783 0.763 0.761 0.766 0.770 0.759 0.740 0.738 0.734 0.718 0.693 0.686 0.664 0.666 0.703 0.546 0.391 0.493 0.455 0.354 0.489
-66.9 -87.7 -112.8 -134.1 -154.5 -170.8 171.7 157.6 139.5 126.1 117.3 105.5 88.2 73.0 59.3 44.2 31.0 18.1 1.0 -26.1 -62.2 -119.2 -176.8 138.2 86.0 96.7
5.333 3.771 3.081 2.646 2.338 2.087 1.878 1.688 1.514 1.376 1.314 1.290 1.237 1.196 1.162 1.099 1.082 1.085 1.071 1.066 1.004 0.993 0.951 0.872 0.765 0.431
134.5 112.9 90.2 70.1 50.6 32.6 14.9 -2.6 -19.9 -35.5 -50.3 -66.4 -84.1 -102.5 -123.4 -143.5 -161.9 176.9 153.7 127.7 100.2 74.3 41.8 10.2 -28.8 -78.0
0.037 0.048 0.056 0.061 0.066 0.068 0.071 0.072 0.078 0.082 0.091 0.104 0.122 0.146 0.176 0.209 0.266 0.350 0.465 0.621 0.779 0.903 0.908 0.821 0.691 0.341
44.1 35.0 23.0 13.8 5.4 -2.6 -9.7 -16.2 -24.7 -32.6 -40.7 -47.9 -58.2 -71.1 -86.9 -103.3 -118.3 -138.1 -163.0 167.1 129.7 90.1 45.7 5.4 -39.2 -89.7
0.311 0.362 0.369 0.365 0.350 0.332 0.347 0.380 0.404 0.395 0.403 0.405 0.362 0.309 0.301 0.270 0.245 0.215 0.170 0.193 0.222 0.170 0.323 0.413 0.465 0.632
-73.2 -71.6 -87.9 -100.5 -114.3 -132.7 -149.7 -169.0 -177.2 173.5 161.2 153.6 144.5 123.6 94.9 78.9 79.9 73.9 68.8 106.0 117.8 110.1 104.9 86.0 78.0 79.9
Others parts begin by ef
EF-1 EF-2 EF-3 EF-4
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