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Part: EFC240B-100F
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> JFETs (Junction-FETs)
-> Power FETs
-> GaAs
Description: 10-14V Low Distortion GAAS Power Fet
Company: Excelics Semiconductor, Inc.
Datasheet: Download EFC240B-100F datasheet File size : 513 kB
Request For quote: Find where to buy EFC240B-100F
Datasheet text preview:
Excelics
DATA SHEET
EFC240B-100F
10 Rad. 63 Dia.
G D
Low Distortion GaAs Power FET
· · · · · · · HERMETIC 100mil CERAMIC FLANGE PACKAGE +31.0dBm TYPICAL OUTPUT POWER HIGH BVgd FOR 10V BIAS 7.0dB TYPICAL POWER GAIN AT 8GHz 0.3 X 2400 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
98
30 34
24
98 24
UNIT dBm dB % 720 mA mS -4.0 V V V
o
79 35
256 TYP.
256 TYP.
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS P1dB G 1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=10V, Ids=50% Idss Gain at 1dB Compression Vds=10V, Ids=50% Idss Power Added Efficiency at 1dB Compression Vds=10V, Ids=50% Idss Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=6mA f=8GHz f=8GHz f=8GHz
All Dimensions In mils
MIN 29.0 5.5
TYP 31.0 7.0 30
MAX
320 200
520 280 -2.5
Drain Breakdown Voltage Igd=2.4mA Source Breakdown Voltage Igs=2.4mA Thermal Resistance
-15 -10
-20 -17 22*
C/W
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS
ABSOLUTE1
CONTINUOUS2
Drain-Source Voltage 14V 10V Vds Gate-Source Voltage -8V -4.5V Vgs Drain Current Idss 520mA Ids Forward Gate Current 60mA 10mA Igsf Input Power 29dBm @ 3dB Compression Pin o Channel Temperature 175 C 150oC Tch Storage Temperature -65/175oC -65/150oC Tstg Total Power Dissipation 6.3W 5.2W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EFC240B-100F
DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
10V, 1/2 Idss
FREQ GHz --- S11 --Mag Ang --- S21 --Mag Ang --- S12 --Mag Ang --- S22 --Mag Ang
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0
0.996 0.872 0.851 0.834 0.826 0.812 0.807 0.812 0.817 0.814 0.802 0.780 0.773 0.774 0.769 0.743 0.726 0.691 0.634 0.638 0.663 0.675 0.705 0.777 0.752 0.630
-103.9 -125.4 -147.2 -165.2 178.5 166.4 153.3 143.6 130.0 119.8 112.7 101.6 85.5 72.0 60.1 47.0 37.1 28.3 19.5 11.5 5.4 -3.3 -23.1 -47.3 -68.3 -114.0
5.570 3.730 2.763 2.222 1.866 1.593 1.386 1.211 1.062 0.954 0.902 0.876 0.827 0.777 0.729 0.679 0.668 0.676 0.701 0.743 0.750 0.734 0.716 0.657 0.615 0.586
115.3 95.1 74.4 55.9 38.1 21.8 6.2 -8.3 -22.6 -35.9 -48.3 -61.5 -76.4 -91.7 -107.9 -122.4 -134.3 -148.3 -164.1 176.6 153.7 131.9 107.0 83.2 60.7 37.6
0.041 0.051 0.056 0.061 0.066 0.072 0.078 0.085 0.092 0.100 0.114 0.134 0.154 0.175 0.200 0.224 0.266 0.324 0.404 0.509 0.609 0.668 0.680 0.573 0.343 0.390
31.6 27.3 21.3 18.4 13.8 9.8 5.4 1.0 -5.5 -12.3 -18.3 -25.8 -36.2 -48.9 -62.8 -76.1 -87.8 -102.7 -121.0 -144.5 -174.3 154.5 118.5 80.0 54.8 65.2
0.374 0.315 0.331 0.340 0.349 0.372 0.416 0.473 0.506 0.517 0.545 0.553 0.539 0.537 0.548 0.532 0.507 0.454 0.371 0.217 0.246 0.426 0.593 0.584 0.332 0.442
-142.9 -140.3 -149.8 -159.8 -172.8 169.2 157.7 145.9 139.9 130.4 120.7 114.6 104.8 87.1 68.8 56.6 50.1 38.1 26.5 46.1 89.1 72.3 44.4 3.4 -83.8 130.4
Others parts begin by ef
EF-1 EF-2 EF-3 EF-4
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