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Part: EFC240D-SOT89
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> JFETs (Junction-FETs)
-> Power FETs
-> GaAs
Description: Low Distortion GAAS Power Fets
Company: Excelics Semiconductor, Inc.
Datasheet: Download EFC240D-SOT89 datasheet File size : 513 kB
Request For quote: Find where to buy EFC240D-SOT89
Datasheet text preview:
Excelics
PRELIMINARY DATA SHEET
EFC240D-SOT89
DC-4GHz
177-183 65-75
SOURCE
Low Distortion GaAs Power FET
Features
· · · · · · ·
LOW COST SURFACE-MOUNT PLASTIC PACKAGE +30.5dBm TYPICAL OUTPUT POWER 13.0dB TYPICAL POWER GAIN AT 2GHz +47dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT 2GHz 0.5 X 2400 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
65-69
160-170
95-100
SOURCE
29-31 59
16-20 14-16
· ·
Applications Analog and Digital Wireless System HPA
(Top View) All Dimensions In Mils
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS P1dB G1dB PAE IP3 Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f = 2GHz Vds=9V, Ids=270mA Gain at 1dB Compression f = 2GHz Vds=9V, Ids=270mA Power Added Efficiency at 1dB Compression Vds=9V, Ids=270mA f = 2GHz Output 3rd Order Intercept Point Vds=7-9V, Ids=340mA f = 2GHz Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=6mA -14 -10 MIN 29.0 11.0 TYP 30.5 13.0 42 47 320 200 520 280 -2.5 -20 -17 25*
o
MAX
DRAIN
GATE
UNIT dBm dB % dBm
720
mA mS
-4.0
V V V C/W
Drain Breakdown Voltage Igd=2.4mA Source Breakdown Voltage Igs=2.4mA
Thermal Resistance *Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25OC
SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 14V -8V Idss 60mA 29dBm 175oC -65/175 C 5.5 W
o
CONTINUOUS2 9V -4.5V 510mA 10mA @ 3dB Compression 150oC -65/150oC 4.6 W
Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
44
15-25
EFC240D-SOT89
PRELIMINARY DATA SHEET Low Distortion GaAs Power FET S-PARAMETERS
9V, 270mA
FREQ GHz --- S11 --Mag Ang --- S21 --Mag Ang --- S12 --Mag Ang --- S22 --Mag Ang
DC-4GHz
0.1 0.2 0.3 0.4 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
0.969 0.960 0.938 0.928 0.908 0.847 0.775 0.738 0.734 0.723 0.721 0.746 0.778 0.817 0.843 0.860
-28.4 -54.3 -75.7 -93.9 -108.4 -152.6 -170.2 168.2 148.2 130.1 110.1 88.5 70.4 55.2 42.8 30.9
14.414 13.109 11.663 10.362 9.131 5.337 4.411 3.406 2.850 2.462 2.187 1.897 1.616 1.364 1.146 0.983
160.7 146.4 133.8 122.8 113.9 84.0 67.4 49.5 32.7 16.0 -1.7 -20.5 -38.0 -54.2 -68.6 -82.3
0.013 0.028 0.036 0.044 0.049 0.058 0.076 0.083 0.091 0.099 0.107 0.112 0.112 0.108 0.103 0.099
77.9 58.9 49.8 42.8 35.8 18.4 13.0 4.5 -3.4 -12.2 -22.6 -34.9 -46.2 -56.6 -66.0 -74.4
0.160 0.260 0.330 0.387 0.420 0.478 0.357 0.366 0.365 0.360 0.354 0.375 0.424 0.484 0.554 0.601
-122.8 -130.8 -139.2 -146.7 -153.1 -174.7 169.1 153.2 143.0 129.2 112.6 92.9 71.2 54.4 40.2 29.9
Others parts begin by ef
EF-1 EF-2 EF-3 EF-4
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