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Part: EFC480C
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> JFETs (Junction-FETs)
-> Power FETs
-> GaAs
Description: 10-14V Low Distortion GAAS Power Fet
Company: Excelics Semiconductor, Inc.
Datasheet: Download EFC480C datasheet File size : 513 kB
Request For quote: Find where to buy EFC480C
Datasheet text preview:
Excelics
PRELIMINARY DATA SHEET
· · · · · · · +33.5dBm TYPICAL OUTPUT POWER 18.0dB TYPICAL POWER GAIN AT 2GHz High BVgd FOR 10V BIAS 0.5 X 4800 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 80mA PER BIN RANGE
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EFC480C
Low Distortion GaAs Power FET
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6
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6
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6
ELECTRICAL CHARACTERISTICS (Ta = 25 C)
SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss Saturated Drain Current Transconductance Pinch-off Voltage f= 2GHz f= 4GHz f= 2GHz f= 4GHz f= 2GHz
O
Chip Thickness: 75 ± 13 microns All Dimensions In Microns
MIN 32.0 16.0
TYP 33.5 33.5 18.0 12.5 40
MAX
UNIT dBm dB %
Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=10mA
640 200
960 560 -2.5
1440
mA mS
-4.0
V V V
o
Drain Breakdown Voltage Igd=4.8mA Source Breakdown Voltage Igs=4.8mA Thermal Resistance (Au-Sn Eutectic Attach)
-15 -10
-20 -17 12
C/W
MAXIMUM RATINGS AT 25OC SYMBOLS
Vds Vgs Ids Igsf Pin Tch
PARAMETERS
Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature
ABSOLUTE 1
14V -8V Idss 120mA 32dBm 175 C
o o
CONTINUOUS2
10V -4.5V 960mA 20mA @3dB Compression 150oC
Storage Temperature -65/175 C -65/150oC Tstg Total Power Dissipation 11.4 W 9.5 W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EFC480C
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
Freq GHz 0.500 1.000 1.500 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 6.500 7.000 7.500 8.000 8.500 9.000 9.500 10.000
Note:
10V, 1/2 Idss ---S11-----S21--Mag Ang Mag Ang 0.937 -106.2 10.161 120.8 0.897 -134.9 6.389 104.7 0.897 -151.8 4.443 93.5 0.897 -161.0 3.370 85.4 0.898 -167.2 2.695 79.2 0.895 -171.8 2.231 73.9 0.890 -175.4 1.894 69.4 0.850 -176.6 1.654 66.9 0.901 177.7 1.535 59.9 0.899 174.5 1.357 55.2 0.900 172.5 1.208 51.4 0.901 170.8 1.087 48.2 0.902 169.6 0.999 45.8 0.893 168.8 0.941 43.3 0.904 170.7 0.916 39.2 0.919 169.5 0.840 34.2 0.918 169.2 0.783 31.0 0.924 168.7 0.729 27.9 0.927 168.0 0.687 24.5 0.932 167.3 0.647 22.3
---S12--Mag Ang 0.022 35.8 0.028 26.4 0.028 21.5 0.029 19.0 0.030 20.2 0.030 19.5 0.030 20.9 0.026 27.6 0.032 23.1 0.031 25.8 0.031 28.1 0.031 30.4 0.032 32.0 0.033 37.1 0.037 34.8 0.036 35.0 0.038 36.6 0.037 37.6 0.038 39.8 0.040 42.4
---S22--Mag Ang 0.518 -166.8 0.505 -168.3 0.524 -171.2 0.533 -173.0 0.539 -173.8 0.542 -174.2 0.542 -173.9 0.560 -172.2 0.607 -169.5 0.617 -170.8 0.620 -171.8 0.619 -172.8 0.616 -172.6 0.637 -171.2 0.669 -172.8 0.681 -175.0 0.693 -176.9 0.701 -178.6 0.706 -179.3 0.716 179.8
The data included 0.7 mils diameter Au bonding wires: 2 gate wires, 20 mils each; 2 drain wires, 12 mils each; 6 source wires, 7 mils each.
Others parts begin by ef
EF-1 EF-2 EF-3 EF-4
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