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Details, datasheet, quote on part number:EPA018A-SOT23
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| Part: | EPA018A-SOT23 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => Power FETs |
| Description: | DC-6 Ghz, 6-12V High Efficiency Heterojunction Power Fet |
| Company: | Excelics Semiconductor, Inc. |
| Datasheet: | Download EPA018A-SOT23 datasheet File size : 33 kB |
| Request For quote: | Find where to buy EPA018A-SOT23
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Datasheet text preview:
Excelics
· · · · · · · · LOW COST SURFACE-MOUNT PLASTIC PACKAGE +20.0dBm TYPICAL OUTPUT POWER 17.0dB TYPICAL POWER GAIN AT 2GHz 0.7dB TYPICAL NOISE FIGURE AT 2GHz +27dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT 2GHz 0.3 X 180 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY
EPA018A-SOT23
PRELIMINARY DATA SHEET
DC-6GHz High Efficiency Heterojunction Power FET
110-120 15-20
SOURCE
4-7
91-98
47-55
27
2-4
DRAIN
GATE
38 37-47 75.5
(Top View) All Dimensions In Mils
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS P1dB G1dB NF IP3 Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=6V, Ids=30mA Gain at 1dB Compression Vds=6V, Ids=30mA Noise Figure, Vds=2V, Ids=15mA Vds=6V, Ids=30mA Output 3rd Order Intercept Point Vds=6V, Ids=30mA Saturated Drain Current Transconductance Pinch-off Voltage Drain Breakdown Voltage f=2GHz f=2GHz f=2GHz f=2GHz 30 35 MIN 18.0 15.0 TYP 20.0 17.0 0.7 0.9 27 55 60 -1.0 -9 -7 -15 -14 450*
o
MAX
UNIT dBm dB dB dBm
Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=1.0mA Igd=0.5mA
80
mA mS
-2.5
V V V C/W
Source Breakdown Voltage Igs=0.5mA Thermal Resistance * Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds Drain-Source Voltage 12V 6V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss 45mA Igsf Forward Gate Current 9mA 1.5mA Pin Input Power 16dBm @3dB Compression Tch Channel Temperature 175oC 150oC Tstg Storage Temperature -65/175oC -65/150oC Pt Total Power Dissipation 330mW 280mW Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Excelics
S-PARAMETERS
FREQ (GHz) 0.1 0.2 0.3 0.4 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 --- S11 --MAG ANG 1.016 -3.8 1.008 -7.6 1.009 -11.4 1.004 -15.4 1.006 -19.2 0.984 -39.1 0.898 -44.3 0.834 -60.3 0.773 -74.7 0.719 -86.1 0.667 -95.1 0.606 -103.0 0.529 -111.7 0.448 -123.5 0.376 -140.5 0.338 -160.8 0.332 -179.3 0.312 171.0 0.254 168.2 0.215 179.1 0.208 172.4 0.186 145.9 0.214 116.9 0.302 102.2 0.381 98.9 0.433 105.6 0.542 117.3 0.897 108.0
EPA018A-SOT23
PRELIMINARY DATA SHEET
DC-6GHz High Efficiency Heterojunction Power FET
6V, 30mA --- S21 ----- S12 --MAG ANG MAG ANG 6.436 176.9 0.001 -173.4 6.387 174.0 0.006 79.5 6.371 170.9 0.009 81.1 6.355 167.7 0.012 79.8 6.351 164.6 0.016 80.6 6.167 148.0 0.031 67.2 4.608 136.1 0.033 62.1 4.347 120.9 0.041 53.6 3.971 107.2 0.045 45.6 3.620 95.6 0.047 40.2 3.357 85.6 0.048 39.1 3.204 76.5 0.050 39.6 3.113 66.9 0.055 42.2 3.048 56.8 0.062 44.9 2.932 46.2 0.072 44.8 2.767 35.5 0.085 43.0 2.542 25.4 0.099 37.5 2.288 18.2 0.105 27.2 2.134 15.0 0.082 26.1 2.204 11.5 0.093 52.4 2.298 3.6 0.145 53.8 2.317 -5.4 0.184 46.1 2.337 -14.0 0.224 41.7 2.295 -23.1 0.268 34.6 2.263 -29.0 0.309 28.8 2.386 -33.9 0.368 24.9 2.658 -41.4 0.485 19.4 3.059 -56.2 0.673 -2.8
--- S22 --MAG ANG 0.828 -1.2 0.822 -4.0 0.822 -6.2 0.821 -8.4 0.821 -10.4 0.805 -21.7 0.812 -22.8 0.777 -31.5 0.746 -39.1 0.727 -45.3 0.713 -49.5 0.703 -53.0 0.686 -56.6 0.660 -60.7 0.627 -66.0 0.592 -72.5 0.549 -79.5 0.494 -83.0 0.505 -78.5 0.617 -80.4 0.691 -88.7 0.698 -96.8 0.716 -105.7 0.689 -118.2 0.668 -128.1 0.725 -136.4 0.905 -148.9 1.112 -172.8
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