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Details, datasheet, quote on part number:EPA030CV
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| Part: | EPA030CV |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => Power FETs |
| Description: | High Efficiency Heterojunction Power Fets |
| Company: | Excelics Semiconductor, Inc. |
| Datasheet: | Download EPA030CV datasheet File size : 79 kB |
| Request For quote: | Find where to buy EPA030CV
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Datasheet text preview:
Excelics
DATA SHEET
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EPA030C/EPA030CV
High Efficiency Heterojunction Power FET
+23.0dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN FOR EPA030C AND 12.0dB FOR EPA030CV AT 18GHz 0.3 X 300 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY EPA030CV WITH VIA HOLE SOURCE GROUNDING Idss SORTED IN 10mA PER BIN RANGE
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Chip Thickness: 75 ± 20 microns All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (Ta = 25 C)
SYMBOLS PARAMETERS/TEST CONDITIONS MIN Output Power at 1dB Compression P1dB Vds=8V, Ids=50% Idss Gain at 1dB Compression G1dB Vds=8V, Ids=50% Idss Gain at 1dB Compression PAE Idss Gm Vp BVgd BVgs Rth Vds=8V, Ids=50% Idss f=12GHz 50 60 45 90 95 -1.0 -11 -7 -15 -14 125 -2.5 130 f=12GHz f=18GHz f=12GHz f=18GHz 12.0 21.0
: Via Hole No Via Hole For EPA030C EPA030CV
MAX MIN 21.0 TYP 23.0 23.0 12.5 14.0 12.0 dB dBm MAX UNIT
EPA030C
TYP 23.0 23.0 13.5 11.0
46 50 60 90 95 -1.0 -11 -7 -15 -14 95
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% 130 mA mS -2.5 V V V C/W
Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=1.0mA
Drain Breakdown Voltage Igd=1.0mA Source Breakdown Voltage Igs=1.0mA Thermal Resistance (Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS
EPA030C
ABSOLUTE1 CONTINUOUS2 8V -3V 110mA 2.5mA @ 3dB Compression 150oC
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EPA030CV
ABSOLUTE1 12V -8V Idss 15mA 21dBm 175oC
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CONTINUOUS2 8V -3V Idss 2.5mA @ 3dB Compression 150oC
Vds Vgs Ids Igsf Pin Tch Tstg Pt
Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation
12V -8V Idss 15mA 21dBm 175oC -65/175 C 1.1W
-65/150 C 900mW
-65/175 C 1.5W
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-65/150oC 1.2W
Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EPA030C/EPA030CV
DATA SHEET
High Efficiency Heterojunction Power FET
EPA030C
S-PARAMETERS EPA030C 8V, 1/2 Idss
FREQ (GHz) 1.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 --- S11 --MAG ANG 0.975 -23.9 0.951 -46.7 0.883 -85.5 0.840 -114.7 0.814 -136.9 0.801 -154.1 0.797 -169.5 0.791 175.9 0.800 160.9 0.816 146.4 0.832 133.9 --- S21 --MAG ANG 7.888 162.4 7.419 147.5 6.169 121.3 4.993 100.9 4.125 84.2 3.495 70.1 3.041 56.7 2.700 43.7 2.425 30.4 2.155 17.0 1.913 4.3 --- S12 --MAG ANG 0.017 76.0 0.032 63.5 0.053 44.0 0.063 30.0 0.067 19.6 0.068 11.2 0.067 4.5 0.068 -1.9 0.069 -7.5 0.070 -12.1 0.071 -17.8 --- S22 --FREQ --- S11 --MAG ANG (GHz) MAG ANG 0.750 -9.3 21.0 0.850 130.8 0.726 -18.3 22.0 0.854 128.3 0.643 -32.0 24.0 0.858 123.8 0.577 -41.6 26.0 0.857 120.7 0.535 -49.6 28.0 0.860 116.0 0.504 -57.1 30.0 0.861 108.2 0.479 -65.6 32.0 0.871 98.2 0.453 -75.2 34.0 0.895 88.7 0.434 -86.1 36.0 0.952 81.3 0.411 -98.4 38.0 1.015 74.8 0.400 -111.3 40.0 1.002 70.1 --- S21 --MAG ANG 1.761 -0.7 1.647 -5.9 1.466 -16.0 1.336 -25.3 1.241 -34.9 1.160 -45.6 1.071 -56.8 0.959 -68.0 0.858 -79.0 0.765 -91.0 0.650 -103.1 --- S12 --MAG ANG 0.069 -18.3 0.068 -18.6 0.067 -19.4 0.067 -16.9 0.070 -17.2 0.073 -19.5 0.072 -23.7 0.068 -28.5 0.072 -36.4 0.073 -51.4 0.072 -70.2 --- S22 --MAG ANG 0.404 -121.6 0.416 -129.4 0.449 -142.5 0.489 -153.1 0.515 -162.6 0.533 -173.0 0.552 175.1 0.579 161.5 0.642 146.1 0.702 130.2 0.725 119.1
EPA030CV
FREQ (GHz) 1.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 --- S11 --MAG ANG 0.988 -25.7 0.959 -49.8 0.888 -91.2 0.837 -125.9 0.834 -145.7 0.829 -162.2 0.834 176.4 0.847 162.9 0.861 150.4 0.869 146.0 0.867 136.7
8V, 1/2 Idss
--- S21 --MAG ANG 7.512 161.8 7.041 146.0 5.765 118.4 4.662 96.0 3.804 80.1 3.181 65.7 2.692 50.1 2.305 36.9 1.987 23.9 1.782 12.9 1.590 1.0 --- S12 --MAG ANG 0.018 75.1 0.034 62.8 0.054 40.8 0.064 25.3 0.067 15.8 0.068 6.8 0.068 -2.3 0.065 -8.7 0.065 -14.2 0.068 -18.3 0.069 -23.3 --- S22 --FREQ --- S11 --MAG ANG (GHz) MAG ANG 0.778 -9.1 21.0 0.869 130.7 0.748 -17.5 22.0 0.875 127.1 0.666 -30.0 24.0 0.891 120.3 0.599 -38.2 26.0 0.899 114.0 0.545 -43.7 28.0 0.905 109.4 0.496 -50.1 30.0 0.906 104.4 0.466 -58.5 32.0 0.909 100.5 0.436 -69.7 34.0 0.929 96.5 0.432 -82.3 36.0 0.967 93.1 0.418 -98.3 38.0 0.985 88.7 0.426 -110.4 40.0 0.986 85.8 --- S21 --MAG ANG 1.524 -5.5 1.428 -11.3 1.260 -22.6 1.103 -33.8 0.955 -44.4 0.841 -55.7 0.735 -66.9 0.647 -77.2 0.604 -85.6 0.559 -96.0 0.506 -106.2 --- S12 --MAG ANG 0.069 -26.1 0.069 -27.6 0.066 -30.9 0.063 -34.5 0.061 -35.8 0.057 -42.1 0.054 -50.6 0.051 -54.3 0.051 -61.8 0.063 -75.7 0.072 -93.8 --- S22 --MAG ANG 0.425 -115.0 0.430 -122.2 0.444 -137.9 0.470 -153.9 0.505 -169.2 0.534 175.4 0.569 161.2 0.612 149.5 0.684 140.0 0.726 130.9 0.757 123.9
Note: The data included 0.7 mils diameter Au bonding wires; 1gate wires, 15 mils each; 1 drain wires, 20 mils each; 4 source wires, 7 mils each; no source wires for EPA030CV.
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