|
Details, datasheet, quote on part number:EPA040AV
| |
| Part: | EPA040AV |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => Power FETs |
| Description: | High Efficiency Heterojunction Power Fets |
| Company: | Excelics Semiconductor, Inc. |
| Datasheet: | Download EPA040AV datasheet File size : 80 kB |
| Request For quote: | Find where to buy EPA040AV
|
| |
Datasheet text preview:
Excelics
· · · · · · ·
EPA040A/EPA040AV
DATA SHEET High Efficiency Heterojunction Power FET
+24.5dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN FOR EPA040A AND 12.0dB FOR EPA040AV AT 18GHz 0.3 X 400 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY EPA040AV WITH VIA HOLE SOURCE GROUNDING Idss SORTED IN 10mA PER BIN RANGE
O
Chip Thickness: 75 ± 20 microns All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (Ta = 25 C)
SYMBOLS PARAMETERS/TEST CONDITIONS MIN Output Power at 1dB Compression P1dB Vds=8V, Ids=50% Idss Gain at 1dB Compression G1dB Vds=8V, Ids=50% Idss Gain at 1dB Compression PAE Idss Gm Vp BVgd BVgs Rth Vds=8V, Ids=50% Idss f=12GHz 70 80 45 120 130 -1.0 -11 -7 -15 -14 105 -2.5 160 f=12GHz f=18GHz f=12GHz f=18GHz 11.5 22.5
: Via Hole No Via Hole For EPA040A EPA040AV
MAX MIN 22.5 TYP 24.5 24.5 12.0 14.0 12.0 dB dBm MAX UNIT
EPA040A
TYP 24.5 24.5 13.5 11.0
46 70 80 120 130 -1.0 -11 -7 -15 -14 77
o
% 160 mA mS -2.5 V V V C/W
Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=1.0mA
Drain Breakdown Voltage Igd=1.0mA Source Breakdown Voltage Igs=1.0mA Thermal Resistance (Au-Sn Eutectic Attach) O
MAXIMUM RATINGS AT 25 C
SYMBOLS PARAMETERS
EPA040A
ABSOLUTE1 CONTINUOUS2 8V -3V 135mA 3mA @ 3dB Compression 150oC
o
EPA040AV
ABSOLUTE1 12V -8V Idss 20mA 21dBm 175oC
o
CONTINUOUS2 8V -3V Idss 3mA @ 3dB Compression 150oC
Vds Vgs Ids Igsf Pin Tch Tstg Pt
Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation
12V -8V Idss 20mA 21dBm 175oC -65/175 C 1.3W
-65/150 C 1.1W
-65/175 C 1.8W
o
-65/150oC 1.5W
Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EPA040A/EPA040AV
DATA SHEET High Efficiency Heterojunction Power FET
EPA040A
S-PARAMETERS EPA040A 8V, 1/2 Idss
FREQ (GHz) 1.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 --- S11 --MAG ANG 0.972 -32.9 0.933 -62.1 0.863 -105.4 0.812 -135.8 0.801 -153.8 0.800 -166.7 0.803 -177.9 0.813 170.4 0.820 157.9 0.835 144.8 0.847 133.3 --- S21 --MAG ANG 10.341 157.6 9.244 139.3 6.944 110.9 5.262 89.9 4.162 74.6 3.415 61.7 2.903 49.7 2.546 38.2 2.259 25.5 2.007 12.6 1.780 -1.0 --- S12 --MAG ANG 0.021 72.5 0.036 57.7 0.053 36.4 0.059 24.0 0.060 15.8 0.060 10.9 0.059 7.4 0.060 4.5 0.060 0.7 0.063 -2.3 0.065 -6.1 --- S22 --FREQ --- S11 --MAG ANG (GHz) MAG ANG 0.666 -12.8 21.0 0.856 132.6 0.611 -24.0 22.0 0.862 128.5 0.493 -40.6 24.0 0.865 122.5 0.425 -54.7 26.0 0.870 119.4 0.405 -66.4 28.0 0.873 117.6 0.405 -75.8 30.0 0.869 114.9 0.411 -83.9 32.0 0.872 109.8 0.403 -90.6 34.0 0.888 101.7 0.379 -99.0 36.0 0.944 92.3 0.340 -113.4 38.0 0.989 82.3 0.319 -137.0 40.0 0.988 76.1 --- S21 --MAG ANG 1.642 -6.5 1.512 -12.2 1.295 -22.5 1.140 -30.9 1.038 -37.9 1.002 -45.6 0.979 -56.0 0.933 -68.8 0.834 -82.9 0.699 -97.4 0.552 -107.6 --- S12 --MAG ANG 0.065 -8.2 0.064 -7.9 0.063 -8.1 0.065 -6.1 0.071 -1.3 0.078 -3.2 0.084 -7.8 0.089 -15.1 0.091 -29.9 0.082 -49.1 0.068 -67.3 --- S22 --MAG ANG 0.341 -155.6 0.382 -165.1 0.481 -177.0 0.563 177.6 0.616 174.5 0.634 170.8 0.611 161.4 0.586 142.2 0.612 116.3 0.712 95.1 0.786 88.5
EPA040AV
FREQ (GHz) 1.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 --- S11 --MAG ANG 0.972 -34.1 0.938 -64.1 0.876 -108.4 0.844 -140.6 0.844 -158.1 0.842 -172.0 0.847 170.9 0.860 159.0 0.873 148.9 0.875 144.1 0.874 135.6
8V, 1/2 Idss
--- S21 --MAG ANG 9.390 157.2 8.386 138.2 6.273 109.1 4.801 87.8 3.868 72.4 3.222 57.9 2.703 42.2 2.302 28.5 1.967 15.0 1.734 3.2 1.532 -9.2 --- S12 --MAG ANG 0.018 71.3 0.032 56.5 0.047 33.4 0.052 19.6 0.054 11.0 0.053 3.7 0.052 -5.1 0.052 -10.9 0.050 -16.3 0.052 -20.3 0.053 -25.5 --- S22 --FREQ --- S11 --MAG ANG (GHz) MAG ANG 0.696 -12.0 21.0 0.870 129.5 0.654 -22.6 22.0 0.871 126.5 0.565 -35.9 24.0 0.871 119.5 0.509 -43.6 26.0 0.877 115.9 0.467 -49.6 28.0 0.869 107.2 0.425 -59.2 30.0 0.865 97.7 0.410 -72.7 32.0 0.838 94.2 0.391 -88.1 34.0 0.908 92.4 0.400 -105.4 36.0 0.956 91.7 0.401 -125.7 38.0 0.982 91.8 0.432 -141.3 40.0 0.973 89.1 --- S21 --MAG ANG 1.474 -16.6 1.372 -22.3 1.183 -34.0 1.009 -45.3 0.865 -56.6 0.748 -68.9 0.638 -81.3 0.551 -92.6 0.499 -102.2 0.466 -113.1 0.423 -122.7 --- S12 --MAG ANG 0.055 -26.7 0.054 -29.6 0.052 -30.2 0.049 -29.9 0.048 -35.3 0.046 -40.1 0.042 -49.1 0.036 -57.6 0.044 -66.9 0.057 -89.9 0.063 -111.8 --- S22 --MAG ANG 0.431 -147.2 0.456 -155.7 0.523 -170.4 0.583 174.3 0.648 164.0 0.691 154.3 0.758 138.7 0.749 124.1 0.810 111.5 0.877 100.0 0.904 95.4
Note: The data included 0.7 mils diameter Au bonding wires; 1gate wires, 15 mils each; 1 drain wires, 20 mils each; 4 source wires, 7 mils each; no source wires for EPA040AV.
|
|
