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Part: EPA240D
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> JFETs (Junction-FETs)
-> Power FETs
Description: High Efficiency Heterojunction Power Fets
Company: Excelics Semiconductor, Inc.
Datasheet: Download EPA240D datasheet File size : 188 kB
Request For quote: Find where to buy EPA240D
Datasheet text preview:
Excelics
DATA SHEET
· · · · · · +33dBm TYPICAL OUTPUT POWER 20.0 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 60mA PER BIN RANGE
75 S 100
EPA240D
High Efficiency Heterojunction Power FET
410 104
D
72
620
155 G S
94
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Gain at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=2GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=6mA
Chip Thickness: 75 ± 13 microns All Dimensions In Microns
MIN 31.0 18.5
TYP 33.0 33.0 20.0 15.0 55
MAX
UNIT dBm dB %
440 480
720 760 -1.0
940
mA mS
-2.5
V V V
o
Drain Breakdown Voltage Igd=2.4mA Source Breakdown Voltage Igs=2.4mA Thermal Resistance (Au-Sn Eutectic Attach)
-11 -7
-15 -14 23
C/W
MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Drain-Source Voltage 12V 8V Vds Gate-Source Voltage -8V -3V Vgs Drain Current Idss 620mA Ids Forward Gate Current 120mA 20mA Igsf Input Power 30dBm @ 3dB Compression Pin o Channel Temperature 175 C 150oC Tch Storage Temperature -65/175oC -65/150oC Tstg Total Power Dissipation 6.0 W 5.0W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EPA240D
DATA SHEET
High Efficiency Heterojunction Power FET
S-PARAMETERS
FREQ (GHz) 0.500 1.000 1.500 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 6.500 7.000 7.500 8.000 8.500 9.000 9.500 10.000
Note:
8V, 1/2 Idss --- S11 ----- S21 --MAG ANG MAG ANG 0.932 -84.1 15.622 132.6 0.885 -124.4 10.061 109.7 0.868 -144.6 7.154 97.1 0.861 -156.7 5.496 88.3 0.859 -165.1 4.443 81.3 0.858 -171.6 3.720 75.2 0.859 -176.9 3.194 69.7 0.860 178.6 2.794 64.5 0.862 174.6 2.478 59.5 0.864 171.0 2.223 54.7 0.867 167.6 2.012 50.0 0.870 164.4 1.833 45.4 0.873 161.4 1.680 40.9 0.877 158.5 1.546 36.5 0.880 155.8 1.428 32.2 0.884 153.1 1.323 27.9 0.888 150.5 1.229 23.8 0.892 147.9 1.143 19.7 0.896 145.4 1.064 15.7 0.900 143.0 0.993 11.8
--- S12 --MAG ANG 0.023 49.4 0.029 33.4 0.031 27.8 0.032 26.3 0.033 26.8 0.034 28.5 0.034 30.9 0.035 33.8 0.037 36.8 0.039 39.7 0.041 42.4 0.044 44.7 0.048 46.5 0.051 47.8 0.055 48.5 0.060 48.7 0.065 48.5 0.069 47.8 0.074 46.8 0.079 45.5
--- S22 --MAG ANG 0.267 -50.6 0.194 -76.5 0.165 -92.0 0.156 -103.5 0.158 -113.0 0.166 -121.5 0.179 -129.2 0.194 -136.4 0.212 -143.3 0.232 -149.8 0.255 -156.0 0.279 -162.0 0.304 -167.8 0.331 -173.5 0.359 -178.9 0.388 175.8 0.417 170.6 0.447 165.6 0.477 160.7 0.506 155.9
The data included 0.7 mils diameter Au bonding wires: 1 gate wires, 20 mils each; 1 drain wires, 12 mils each; 4 source wires, 7 mils each.
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