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Details, datasheet, quote on part number:EPA480C-CPO83
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| Part: | EPA480C-CPO83 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => Power FETs |
| Description: | High Efficiency Heterojunction Power Fets |
| Company: | Excelics Semiconductor, Inc. |
| Datasheet: | Download EPA480C-CPO83 datasheet File size : 65 kB |
| Request For quote: | Find where to buy EPA480C-CPO83
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Datasheet text preview:
Excelics
PRELIMINARY DATA SHEET
EPA480C-CP083
High Efficiency Heterojunction Power FET
· · · · · · NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +35.5dBm TYPICAL OUTPUT POWER 17.5dB TYPICAL POWER GAIN AT 2GHz 0.4 X 4800 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY
O
ELECTRICAL CHARACTERISTICS (Ta = 25 C)
SYMBOLS P1dB G 1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Gain at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=2GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=14mA
All Dimensions In Mils Tolerance ±3
MIN 34.0 16.0
TYP 35.5 35.5 17.5 12.5 47
MAX
UNIT dBm dB %
880 960
1440 1560 -1.0
1880
mA mS
-2.5
V V V
o
Drain Breakdown Voltage Igd=4.8mA Source Breakdown Voltage Igs=4.8mA Thermal Resistance (Au-Sn Eutectic Attach)
-11 -7
-15 -14 12*
C/W
* Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS
Vds Vgs Ids Igsf Pin Tch Tstg
PARAMETERS
Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature
ABSOLUTE1
12V -8V Idss 240mA 33dBm 175oC -65/175oC
CONTINUOUS2
8V -3V 1.2A 40mA @ 3dB Compression 150oC -65/150oC
Total Power Dissipation 11.4 W 9.5 W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EPA480C-CP083
PRILIMINARY DATA SHEET
High Efficiency Heterojunction Power FET
S-PARAMETERS
8V, 1/2 Idss FREQ (GHz) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 --- S11 --MAG ANG 0.927 -152.0 0.935 -175.5 0.865 170.4 0.855 159.1 0.840 149.7 0.824 139.9 0.800 127.3 0.773 111.4 0.759 92.0 0.757 71.4 0.765 50.9 0.777 31.5 0.788 13.0 0.810 -9.3 0.849 -32.1 0.890 -50.8 0.924 -63.7 0.932 -72.7 0.939 -79.6 0.955 -88.6 --- S21 --MAG ANG 13.045 93.2 6.698 73.6 5.609 62.3 4.341 49.9 3.652 38.1 3.298 25.6 3.085 11.6 2.921 -4.4 2.749 -21.9 2.552 -40.0 2.346 -58.1 2.154 -76.1 2.020 -92.7 1.885 -113.5 1.647 -135.8 1.328 -155.9 1.049 -171.9 0.828 175.1 0.695 164.4 0.622 155.8 --- S12 --MAG ANG 0.013 24.5 0.016 25.5 0.024 27.8 0.028 26.7 0.035 22.6 0.042 18.5 0.051 9.5 0.061 -1.5 0.070 -13.2 0.079 -26.5 0.086 -40.2 0.092 -54.4 0.098 -66.9 0.101 -83.5 0.098 -102.0 0.088 -117.3 0.076 -130.9 0.067 -138.7 0.064 -151.0 0.060 -160.5 --- S22 --MAG ANG 0.613 -175.3 0.604 178.5 0.513 171.1 0.504 166.3 0.481 162.4 0.442 158.4 0.397 153.0 0.356 144.6 0.326 132.1 0.315 117.0 0.315 100.4 0.314 83.0 0.272 64.5 0.287 38.7 0.351 7.0 0.448 -18.9 0.556 -35.7 0.629 -47.0 0.663 -56.0 0.701 -59.3
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