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Details, datasheet, quote on part number:EPA680A-180F
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| Part: | EPA680A-180F |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => Power FETs |
| Description: | 8-12V High Efficiency Heterojunction Power Fet |
| Company: | Excelics Semiconductor, Inc. |
| Datasheet: | Download EPA680A-180F datasheet File size : 31 kB |
| Request For quote: | Find where to buy EPA680A-180F
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Datasheet text preview:
Excelics
PRELIMINARY DATA SHEET
EPA680A-180F
High Efficiency Heterojunction Power FET
· · · · · · NON-HERMETIC 180MIL METAL FLANGE PACKAGE +37.5dBm TYPICAL OUTPUT POWER 17.5dB TYPICAL POWER GAIN AT 2GHz 0.4 X 6800 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY
All Dimensions In Mils
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS P1dB G 1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Gain at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=2GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=20mA
MIN 36.0 16.0
TYP 37.5 37.5 17.5 12.5 52
MAX
UNIT dBm dB %
1250 1360
2040 2150 -1.0
2660
mA mS
-2.5
V V V
o
Drain Breakdown Voltage Igd=6.8mA Source Breakdown Voltage Igs=6.8mA Thermal Resistance (Au-Sn Eutectic Attach)
-11 -7
-15 -14 7*
C/W
* Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS
Vds Vgs Ids Igsf Pin Tch Tstg
PARAMETERS
Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature
ABSOLUTE1
12V -8V Idss 360mA 35dBm 175oC -65/175oC
CONTINUOUS2
8V -3V 2.2A 60mA @ 3dB Compression 150oC -65/150oC
Total Power Dissipation 21 W 18 W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 9505
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EPA680A-180F
PRELIMINARY DATA SHEET
High Efficiency Heterojunction Power FET
S-PARAMETERS
8V, 1/2 Idss Freq GHz 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 S11 Mag 0.971 0.972 0.926 0.925 0.913 0.889 0.872 0.845 0.825 0.814 0.802 0.797 0.809 0.812 0.840 0.872 0.905 0.913 0.902 0.912 S11 Ang -161.4 -175.9 175.9 170.9 167.6 163.7 156.4 145.5 131.4 115.7 98.9 80.9 59.0 35.2 7.8 -17.1 -35.8 -53.2 -66.8 -80.5 S21 Mag 9.366 4.849 4.293 3.416 2.994 2.825 2.805 2.818 2.804 2.750 2.673 2.591 2.458 2.377 2.123 1.714 1.363 1.105 0.940 0.847 S21 Ang 91.2 76.2 68.2 59.2 50.1 40.1 27.2 11.2 -6.8 -26.1 -45.2 -65.2 -86.0 -110.0 -135.7 -158.8 -176.4 168.1 155.6 138.2 S12 Mag 0.009 0.010 0.016 0.020 0.024 0.030 0.037 0.047 0.055 0.063 0.070 0.078 0.079 0.081 0.075 0.061 0.049 0.044 0.052 0.044 S12 Ang 23.7 29.1 31.8 32.5 30.7 25.7 17.6 5.0 -7.9 -23.2 -39.0 -56.4 -75.2 -94.9 -116.1 -132.6 -144.9 -139.4 -161.7 176.6 S22 Mag 0.791 0.773 0.713 0.688 0.652 0.599 0.523 0.441 0.375 0.353 0.358 0.369 0.394 0.436 0.517 0.611 0.709 0.754 0.748 0.761 S22 Ang 177.8 172.5 163.9 158.3 151.9 143.9 133.5 117.9 96.0 69.3 43.9 20.9 -4.9 -30.0 -55.3 -77.2 -89.5 -96.1 -102.5 -119.1
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