|
Details, datasheet, quote on part number:EPA680A
| |
| Part: | EPA680A |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => Power FETs |
| Description: | High Efficiency Heterojunction Power Fets |
| Company: | Excelics Semiconductor, Inc. |
| Datasheet: | Download EPA680A datasheet File size : 76 kB |
| Request For quote: | Find where to buy EPA680A
|
| |
Datasheet text preview:
Excelics
DATA SHEET
EPA680A
High Efficiency Heterojunction Power FET
· · · · · · +37.0dBm TYPICAL OUTPUT POWER 7.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 6800 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 180mA PER BIN RANGE
Chip Thickness: 60 ± 15 microns All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS P1dB G 1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss Gain at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss Power Added Efficiency at 1dB Compression Vds=8V, Ids=50%Idss f=12GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=20mA -11 -7 MIN 35.5 5.5 TYP 37.0 7.0 MAX UNIT dBm dB % 2670 mA mS -2.5 V V V
o
40 1230 1360 2040 2150 -1.0 -15 -14 7
Drain Breakdown Voltage Igd=6.8mA Source Breakdown Voltage Igs=6.8mA Thermal Resistance (Au-Sn Eutectic Attach)
O
C/W
MAXIMUM RATINGS AT 25 C SYMBOLS
Vds Vgs Ids Igsf Pin Tch Tstg
PARAMETERS
Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature
ABSOLUTE1
12V -8V Idss 340mA 34.5dBm 175 C -65/175 C
o o
CONTINUOUS2
8V -3V 2.2A 55mA @ 3dB Compression 150oC -65/150oC
Total Power Dissipation 21 W 18 W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EPA680A
DATA SHEET
High Efficiency Heteroj0.unction Power FET
S-PARAMETERS
FREQ (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0
Note:
--- S11 --MAG ANG 0.882 -162.1 0.925 -172.0 0.943 -176.5 0.950 -179.7 0.957 174.0 0.959 172.0 0.965 170.8 0.957 169.6 0.955 168.5 0.955 167.0 0.961 165.8 0.967 164.4 0.949 159.7 0.945 154.7 0.945 152.9 0.934 151.1 1.290 145.9 1.256 141.5 1.112 141.4
8V, 1/2 Idss --- S21 ----- S12 --MAG ANG MAG ANG 5.927 100.9 0.013 2.6 2.903 81.8 0.011 4.0 1.836 71.8 0.013 25.8 1.320 65.2 0.013 35.1 1.007 59.7 0.014 44.8 0.829 54.9 0.018 52.7 0.710 50.7 0.020 50.8 0.615 46.2 0.021 55.6 0.536 41.6 0.023 55.7 0.469 40.8 0.025 59.6 0.426 34.2 0.027 60.2 0.384 30.3 0.028 57.0 0.314 25.0 0.029 57.6 0.263 16.9 0.030 55.0 0.234 10.7 0.034 51.1 0.216 3.1 0.039 49.2 0.194 0.8 0.045 51.9 0.165 -10.7 0.050 42.1 0.144 -14.0 0.056 38.3
--- S22 --MAG ANG 0.705 -179.4 0.742 -177.3 0.772 -177.9 0.792 -179.1 0.807 -176.5 0.813 -178.1 0.829 -179.5 0.843 177.3 0.854 175.1 0.879 179.5 0.852 173.9 0.848 172.9 0.885 175.9 0.900 174.2 0.887 172.7 0.907 165.8 0.709 163.7 0.667 161.0 0.696 157.6
The data included 0.7 mils diameter Au bonding wires: 4 gate wires, 20 mils each; 4 drain wires, 12 mils each; 10 source wires, 7 mils each.
|
|
