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Details, datasheet, quote on part number:EPA720A
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| Part: | EPA720A |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => Power FETs |
| Description: | 8-12V High Efficiency Heterojunction Power Fet |
| Company: | Excelics Semiconductor, Inc. |
| Datasheet: | Download EPA720A datasheet File size : 32 kB |
| Request For quote: | Find where to buy EPA720A
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Datasheet text preview:
Excelics
DATA SHEET
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EPA720A
High Efficiency Heterojunction Power FET
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+37.5dBm TYPICAL OUTPUT POWER 19.0dB TYPICAL POWER GAIN AT 2GHz 0.4 X 7200 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 180mA PER BIN RANGE
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ELECTRICAL CHARACTERISTICS (Ta = 25 C)
SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS
O
Chip Thickness: 50 ± 10 microns (with > 20 microns Gold Plated Heat Sink (PHS) ) All Dimensions In Microns
MIN 36.0 17.5
TYP 37.5 37.5 19.0 14.0 52
MAX
UNIT dBm dB %
Output Power at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Gain at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=2GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=22mA
1320 1440
2160 2280 -1.0
2820
mA mS
-2.5
V V V
o
Drain Breakdown Voltage Igd=7.2mA Source Breakdown Voltage Igs=7.2mA Thermal Resistance (Au-Sn Eutectic Attach)
-11 -7
-15 -14 6
C/W
MAXIMUM RATINGS AT 25OC SYMBOLS
Vds Vgs Ids Igsf Pin Tch Tstg
PARAMETERS
Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature
ABSOLUTE1
12V -8V Idss 360mA 35dBm 175 C -65/175oC
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CONTINUOUS2
8V -3V 1.6A 60mA @ 3dB Compression 150oC -65/150oC
Total Power Dissipation 23 W 19 W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EPA720A
DATA SHEET
High Efficiency Heterojunction Power FET
S-PARAMETERS
FREQ (GHz) 0.500 1.000 1.500 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 6.500 7.000 7.500 8.000 8.500 9.000 9.500 10.000
Note:
8V, 1/2 Idss --- S11 ----- S21 --MAG ANG MAG ANG 0.947 -146.8 11.090 102.6 0.944 -164.2 5.705 90.6 0.944 -170.7 3.808 83.9 0.944 -174.4 2.844 78.6 0.945 -176.9 2.259 74.0 0.945 -178.8 1.865 69.7 0.946 179.5 1.582 65.7 0.947 178.1 1.367 61.9 0.948 176.8 1.199 58.3 0.949 175.6 1.064 54.9 0.951 174.5 0.952 51.6 0.952 173.4 0.859 48.5 0.953 172.3 0.780 45.5 0.954 171.3 0.712 42.7 0.955 170.3 0.653 40.1 0.956 169.3 0.601 37.6 0.957 168.3 0.556 35.3 0.958 167.3 0.516 33.2 0.959 166.3 0.481 31.2 0.960 165.4 0.449 29.3
--- S12 --MAG ANG 0.016 22.4 0.017 20.3 0.017 23.5 0.018 28.1 0.019 33.2 0.020 38.3 0.021 43.3 0.022 47.9 0.024 52.1 0.026 55.6 0.028 58.6 0.031 61.1 0.033 63.0 0.036 64.5 0.039 65.5 0.042 66.3 0.045 66.8 0.048 67.0 0.052 67.0 0.055 66.8
--- S22 --MAG ANG 0.501 -168.2 0.520 -172.3 0.531 -173.1 0.542 -173.3 0.555 -173.4 0.570 -173.5 0.586 -173.7 0.603 -174.2 0.621 -174.8 0.639 -175.6 0.657 -176.6 0.674 -177.7 0.691 -178.9 0.708 179.8 0.724 178.4 0.739 176.9 0.753 175.4 0.767 173.9 0.780 172.3 0.792 170.7
The data included 0.7 mils diameter Au bonding wires: 3 gate wires, 20 mils each; 3 drain wires, 12 mils each; 8 source wires, 7 mils each.
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