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Details, datasheet, quote on part number:1N4448
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Datasheet text preview:
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
Small Signal Diode
Absolute Maximum Ratings*
Symbol
VRRM IF(AV) IFSM Ts t g TJ
TA = 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature
Value
100 200 1.0 4.0 -65 to +200 175
Units
V mA A A °C °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD R J A
Characteristic
Power Dissipation Thermal Resistance, Junction to Ambient
Max
1N/FDLL 914/A/B / 4148 / 4448 500 300
Units
mW °C/W
2 0 0 2 Fairchild Semiconductor Corporation
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448, Rev. B
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
Small Signal Diode
(continued)
Electrical Characteristics
Symbol
VR VF
TA = 25°C unless otherwise noted
Parameter
Breakdown Voltage Forward Voltage 1N914B/4448 1N916B 1N914/916/4148 1N914A/916A 1N916B 1N914B/4448
Test Conditions
IR = 100 µA IR = 5.0 µA IF = 5.0 mA IF = 5.0 mA IF = 10 mA IF = 20 mA IF = 20 mA IF = 100 mA VR = 20 V VR = 20 V, TA = 150°C VR = 75 V VR = 0, f = 1.0 MHz VR = 0, f = 1.0 MHz IF = 10 mA, VR = 6.0 V (60mA), Irr = 1.0 mA, RL = 100
Min
100 75 620 630
Max
Units
V V mV mV V V V V nA µA µA pF pF ns
IR CT trr
Reverse Current
720 730 1.0 1.0 1.0 1.0 25 50 5.0 2.0 4.0 4.0
Total Capacitance 1N916A/B/4448 1N914A/B/4148 Reverse Recovery Time
Typical Characteristics
1 60
T a= 25 C
o
1 20
T a = 25 C
o
R e vers e Voltage, VR [V]
1 50
R e v e r s e Current, IR [nA]
1 00
80
1 40
60
1 30
40
1 20
20
1 10
0
10
1
2
3
5
10
20
30
50
100
R e v e r s e V o l t a g e , V R [V]
20
30
50
70
100
R e v e r s e Current, IR [uA]
Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100 uA
Figure 2. Reverse Current vs Reverse Voltage IR - 10 to 100 V
GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature
550
T a = 25 C
o
750
Ta= 25 C
o
Forw ard Voltage, VR [mV]
450
F o rw a rd Voltage, V [mV] F
500
700
650
400
600
350
550
300
500
250
1
2
3
5
10
20
30
50
100
450
0 .1
0.2
0.3
0.5
1
2
3
5
10
F o rw a rd Current, IF [uA]
Figure 3. Forward Voltage vs Forward Current VF - 1 to 100 uA
Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10 mA
F o r w a r d Current, I F [m A ]
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
Small Signal Diode
(continued)
Typical Characteristics
(continued)
1 .6
900
Ta= 25 C
o
Forward Voltage, V F [mV]
800 700 600 500 400 300
T y p ic a l T a= -40 C
o
Forward Voltage, VF [mV]
1 .4
1 .2
T a= 25 C
o
1 .0
Ta= +65 C
o
0 .8
0 .6
10
20
30
50
100
200
300
500
800
0 .0 1
0 .0 3
0 .1
0 .3
1
3
10
Forward Current, IF [mA]
Figure 5. Forward Voltage vs Forward Current VF - 10 to 800 mA
Figure 6. Forward Voltage vs Ambient Temperature VF - 0.01 - 20 mA (-40 to +65 Deg C)
4 .0
Forward Current, IF [mA]
0.90
0.85
0.80
0.75
Reverse Recovery Time, t rr [ns]
TA = 25 C
o
Ta = 25 C
o
3 .5
Total Capacitance (pF)
3 .0
2 .5
2 .0
1 .5
1 .0
0
2
4
6
8
10
12
14
10
20
30
40
50
60
REVERSE VOLTAGE (V)
IF = 10mA - IRR = 1.0 mA - Rloop = 100 Ohms
R e v e rs e Recovery Current, Irr [mA]
Figure 7. Total Capacitance
Figure 8. Reverse Recovery Time vs Reverse Recovery Current
500
500
400
Power Dissipation, P [mW] D
400
DO-35
Current (mA)
300
300
200
IF(
AV )
- A VE
R AG
SOT-23
E RE C
T IF IE
200
D CU
R RE
100
NT -
mA
100
0
0
50
100
o
150
0
0
50
100
150
o
200
A m b ien t Temperature ( C )
Temperature [ C]
Figure 9. Average Rectified Current (IF(AV)) versus Ambient Temperature (TA)
Figure 10. Power Derating Curve
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series
DISCLAIMER
FAST â FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak
MICROWIRE OPTOLOGIC â OPTOPLANAR PACMAN POP Power247 PowerTrench â QFET QS QT Optoelectronics Quiet Series
SILENT SWITCHER â UHC SMART START UltraFET â SPM VCX STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation
STAR*POWER is used under license
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Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. H5
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