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Details, datasheet, quote on part number:2N4123
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| Part: | 2N4123 |
| Category: | Discrete => Transistors => Bipolar => General Purpose => NPN => Amplifier |
| Description: | NPN General Purpose Amplifier |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download 2N4123 datasheet File size : 593 kB |
| Request For quote: | Find where to buy 2N4123
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Datasheet text preview:
2N4123
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2N4123
C
BE
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA.
Absolute Maximum Ratings*
Symb ol
VCEO VCBO VEBO IC TJ, Tst g Collector- Emitter Voltage Collector- Bas e Voltage Emitt er-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Valu e
30 40 5.0 200 -55 to +150
Un its
V V V mA °C
Oper ating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symb ol
PD RJC RJA
TA = 25°C unless otherwise noted
Ch aracteristic
Tot al Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
2N4123 625 5.0 83. 3 200
Un its
mW mW / °C °C/W °C/W
© 2001 Fairchild Semiconductor Corporation
2N4123, Rev A
2N4123
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Sy mb ol Pa rameter
TA = 25°C unless otherwise noted
T est Conditions
Min
Max
Un its
OFF CHARACTERISTICS
V(BR) CEO V(BR) CBO V(BR) EBO ICBO IEBO Collector -Emitter Breakdown Voltage* Collector -Base Breakdown Voltage Emitt er-Base Breakdown Voltage Collector Cutoff Current Emitt er Cutoff Current I C = 1.0 mA, IB = 0 I C = 10 µA, I E = 0 I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VEB = 3.0 V, I C = 0 30 40 5.0 50 50 V V V nA nA
ON CHARACTERISTICS*
hFE VCE(sat) VBE(sat) DC Current Gain Collector- Emitter Saturation Voltage Base-Emit ter Saturation Voltage VCE = 1.0 V, IC = 2.0 mA VCE = 1.0 V, IC = 50 mA I C = 50 mA, I B = 5.0 mA I C = 50 mA, I B = 5.0 mA 50 25 150 0.3 0.95 V V
SMALL SIGNAL CHARACTERISTICS
Cob Cib hf e Output Capacitance Input Capacitance Small- Signal Current Gain VCB = 5.0 V, f = 100 kHz VEB = 0.5 V, f = 0.1 MHz IC = 2.0 mA, VCE = 10 V, f = 1.0 kHz IC = 10 mA, VCE = 20 V, f = 100 MHz IC = 10 mA, VCE = 20 V f = 100 MHz VCE = 5.0 V, IC = 100 µA, RS = 1.0 k, BW = 10 Hz to 15.7 kHz 50 2.5 250 6.0 4.0 8.0 200 pF pF
fT NF
Curr ent Gain - Bandwidth Product Noise Figure
MHz dB
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
2N4123
NPN General Purpose Amplifier
(continued)
Typical Characteristics
5 00 4 00
125 °C
V CE = 5V
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
h F E - TYP IC AL PULSED CURRE NT GAIN
Typ i cal Pulsed Current Gain vs Collector Current
Collector-Emitter Saturation Voltage vs Collector Current
0.15 = 10
125 °C
3 00
25 °C
0.1
25 °C
2 00 1 00 0 0. 1
- 40 °C
0.05
- 40 °C
1 10 I C - COLLECTOR CURRENT (mA)
1 00
0.1
1 10 I C - COLLECTOR CURRENT (mA)
100
V E(ON)- BASE-EMITTER ON VOLTAGE (V) B
VBESAT- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current
1
= 10
Base-Emitter ON Voltage vs Collector Current
1 VCE = 5V 0.8
- 40 °C 25 °C
0.8
- 40 °C 25 °C
0.6
125 °C
0.6
125 °C
0.4
0.4 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 100
0.2 0.1
1 10 I C - COLLECTOR CURRENT (mA)
100
Collector-Cutoff Current vs Ambient Temperature
ICBO- COLLECTOR CURRENT (nA) 500
CAPACITANCE (pF) 10
Capacitance vs Reverse Bias Voltage
f = 1.0 MHz
100 10 1 0. 1
VCB = 30V
5 4 3 2
C obo C ibo
25
50 75 100 125 TA - AMBIENT TEMPERATURE ( °C)
150
1 0.1
1 10 REVERSE BIAS VOLTAGE (V)
100
2N4123
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Noise Figure vs Frequency
12 NF - NOISE FIGURE (dB) 10 8 6 4 2 0 0.1
I C = 100 µA, R S = 500
Noise Figure vs Source Resistance
12 NF - NOISE FIGURE (dB)
I C = 1.0 mA
I C = 1.0 mA R S = 200 I C = 50 µA R S = 1.0 k I C = 0.5 mA R S = 200
V CE = 5.0V 10
I C = 5.0 mA
8 6 4 2 0 0.1
I C = 50 µA
I C = 100 µA
1 10 f - FREQUENCY (kHz)
100
1 10 R S - SOURCE RESISTANCE ( k )
100
Current Gain and Phase Angle vs Frequency
50 45 40 35 30 25 20 15 10 5 0 h fe
PD - POWER DISSIPATION (W)
Power Dissipation vs Ambient Temperature
0 20 40 60 80 100 120 140 160 180
1000
1
- CURRENT GAIN (dB)
SOT-223
0.75
- DEGREES
TO-92
0.5
SOT-23
0.25
h
V CE = 40V I C = 10 mA 1 10 100 f - FREQUENCY (MHz)
fe
0
0
25
50 75 100 TEMPERATURE (o C)
125
150
Turn-On Time vs Collector Current
500 I B1 = I B2 = 40V TIME (nS) 100 15V t r @ V CC = 3.0V 2.0V 10 t d @ VCB = 0V 5 1 10 I C - COLLECTOR CURRENT (mA) 100
Ic 10
Rise Time vs Collector Current
500 VCC = 40V t r - RISE TIME (ns) I B1 = I B2 =
Ic 10
100
T J = 125°C
T J = 25°C
10 5 1 10 I C - COLLECTOR CURRENT (mA) 100
2N4123
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Storage Time vs Collector Current
500 t S - STORAGE TIME (ns)
T J = 25°C
Fall Time vs Collector Current
500 I B1 = I B2 = t f - FALL TIME (ns)
T J = 125°C Ic 10
I B1 = I B2 =
Ic 10
VCC = 40V
100
T J = 125°C
100
T J = 25°C
10 5 1 10 I C - COLLECTOR CURRENT (mA) 100
10 5 1 10 I C - COLLECTOR CURRENT (mA) 100
Current Gain
V CE = 10 V f = 1.0 kHz T A = 25oC h o e - OUTPUT ADMITTANCE ( µ mhos) 500 100
Output Admittance
V CE = 10 V f = 1.0 kHz T A = 25oC
h fe - CURRENT GAIN
100
10
10 0. 1
1 I C - COLLECTOR CURRENT (mA)
10
1 0. 1
1 I C - COLLECTOR CURRENT (mA)
10
h re - VOLTAGE FEEDBACK RATIO (x10
100 h ie - INPUT IMPEDANCE (k )
_4
)
Input Impedance
V C E = 10 V f = 1.0 kHz T A = 25oC
Voltage Feedback Ratio
10 7 5 4 3 2 V C E = 10 V f = 1.0 kHz T A = 25oC
10
1
0. 1 0. 1
1 I C - COLLECTOR CURRENT (mA)
10
1 0.1
1 I C - COLLECTOR CURRENT (mA)
10
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