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Details, datasheet, quote on part number:2N4126
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| Part: | 2N4126 |
| Category: | Discrete => Transistors => Bipolar => General Purpose => PNP => Amplifier |
| Description: | PNP General Purpose Amplifier |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download 2N4126 datasheet File size : 756 kB |
| Request For quote: | Find where to buy 2N4126
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Datasheet text preview:
2N4126 / MMBT4126
2N4126
MMBT4126
C
E C B
TO-92
E
SOT-23
Mark: ZF
B
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC T J , T s tg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
25 25 4.0 200 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
PD R J C R J A
TA= 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4126 625 5.0 83.3 200
Max
*M M BT4126 350 2.8 357
Units
mW mW /°C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
2N4126/MMBT4126, Rev A
2N4126 / MMBT4126
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
T est Conditions
Mi n
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 1.0 mA, IB = 0 IC = 10 µA, IE = 0 IC = 10 µA, IC = 0 VCB = 20 V, IE = 0 VEB = 3.0 V, IC = 0 25 25 4.0 50 50 V V V nA nA
ON CHARACTERISTICS*
hFE VCE(sat) VBE(sat) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 2.0 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 50 mA, IB = 5.0 mA IC = 50 mA, IB = 5.0 mA 120 60 360 0.4 0.95 V V
SMALL SIGNAL CHARACTERISTICS
fT C i bo Cc b hfe NF Current Gain - Bandwidth Product Input Capacitance Collector-Base Capcitance Small-Signal Current Gain Noise Figure IC = 10 mA, VCE = 20 V, f = 100 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz VCB = 5.0 V, IE = 0, f = 100 kHz IC = 2.0 mA, VCE = 10 V, f = 1.0 kHz IC = 100 µA, VCE = 5.0 V, RS=1.0 k, f=10 Hz to 15.7 kHz 250 10 4.5 120 480 4.0 dB MHz pF pF
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
2N4126 / MMBT4126
PNP General Purpose Amplifier
(continued)
Typical Characteristics
V CESAT - COLLECTOR EMITTER VOLTAGE (V)
h F E - TYPICAL PULSED CURRENT GAIN
Ty pi cal Pulsed Current Gain v s Collector Current
2 50
V CE = 1 .0 V
1 2 5 °C
Coll ector -Em itt er Saturation Voltage vs Collector Current
0. 3 0 .2 5 0. 2 0 .1 5 0. 1
125°C 25 °C
= 10
2 00
1 50
2 5 °C
1 00
- 40 °C
0 .0 5 0
- 40 °C
50 0. 1
0. 2
0. 5 1 2 5 10 20 I C - COLLECTOR CURRE NT (mA)
50
1 00
1
10 10 0 I C - COLLECTOR CURRENT (mA)
20 0
VBE( ON)- BASE EMITTER ON VOLTAGE (V)
V BESAT - BASE EM I TTE R VOLTAGE (V)
Bas e-Em itt er Saturation Voltage vs Collector Current
1 0. 8
25 °C
Bas e Emitter ON Voltage vs Coll ect or Current
1 0. 8
- 40 °C
= 10
- 40 °C
0. 6 0. 4 0. 2 0
125 °C
0. 6 0. 4 0. 2 0 0. 1
25 °C 125 °C
V CE = 1V
1
10 10 0 I C - COLLECTOR CURRE NT (mA)
20 0
1 10 I C - COLLECTOR CURRENT (mA)
25
Co ll ect or -Cutoff Current vs Ambient Temperature
I CBO - COLLE CTOR CURRENT (nA) 10 0 V 10
CB
Common-Base Open Circuit Input and Output Capacitance vs Reverse Bias Voltage
10
C obo
= 25V CAPACITANCE (pF)
8 6 4 2 0 0.1
C ibo
1
0. 1
0 .0 1 25
50 75 10 0 TA - AMBIE NT TEMP ER ATUR E (° C)
12 5
1 REVERSE BIAS VOLTAGE (V)
10
2N4126 / MMBT4126
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Noi se Figure vs Frequency
6 V CE = 5.0V NF - NOISE FIGURE (dB) 5 4 3 2
I C = 1.0 mA, R S = 200 I C = 100 µA, R S = 200
Noise Figure vs Source Resistance
12 NF - NOISE FIGURE (dB) 10 8 6 4
I C = 100 µA I C = 1.0 mA
V CE = 5.0V f = 1.0 kHz
1 0 0. 1
I C = 100 µA, R S = 2.0 k
2 0 0.1
1 10 f - FREQUENCY (kHz)
100
1 10 R S - SOURCE RESISTANCE ( k )
100
Switching Times vs Collector Current
500
ts
Tu rn On and Turn Off Times vs Collector Current
500
t off Ic 10 t on
100 TIM E (nS)
100 TIME (nS)
t on I B1 =
tf
10 I B1 = I B2 =
Ic 10
tr
10
VBE(OF F) = 0.5V
Ic t off I = I = B1 B2 10
td
1
1
10 I C - COLLECTOR CURRENT (mA)
100
1
1 I
10 - COLLECTOR CURRENT (mA)
100
Power Dissipation vs Ambient Temperature
1 PD - POWER DISSIPATION (W)
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
0
0
25
50 75 100 TEMPERATURE (o C)
125
150
2N4126 / MMBT4126
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
_4
)
Voltage Feedback Ratio
100 h ie - INPUT IMPEDANCE (k ) 10
Inp ut Impedance
VC E = 10 V f = 1.0 kHz
h re - VOLTAGE FEEDBACK RATIO (x10
10
1
1 0.1
1 I C - COLLECTOR CURRENT (mA)
10
0. 1 0. 1
1 I C - COLLECTOR CURRENT (mA)
10
Output Admittance
h oe - OUTPUT ADMITTANCE ( µ mhos) 1000 V C E = 10 V f = 1.0 kHz
h f e - CURRENT GAIN 1000 500
Current Gain
V CE = 10 V f = 1.0 kHz
200 100 50
100
20
10 0. 1
1 I C - COLLECTOR CURRENT (mA)
10
10 0. 1
1 I C - COLLECTOR CURRENT (mA)
10
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