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Part: 2N6515
Category:
Discrete
-> Transistors
-> Bipolar
-> High Voltage
-> NPN
Description: NPN Epitaxial Silicon Transistor
Company: Fairchild Semiconductor
Datasheet: Download 2N6515 datasheet File size : 86 kB
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Datasheet text preview:
2N6515
2N6515
High Voltage Transistor
· Collector-Emitter Voltage: VCEO= 250V · Collector Dissipation: PC (max)=625mW · Complement to 2N6518
1
T O -9 2
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Par a m e t e r Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 250 250 6 500 625 150 -55 ~ 150 U n i ts V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCEO BVCBO BVEBO ICBO IEBO hFE P a r a m e te r * Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC=1mA, IB=0 IC=100µA, IE=0 IE=10µA, IC=0 VCB=150V, IE=0 VBE=5V, IC=0 IC=1mA, VCE=10V IC=10mA, VCE=10V IC=30mA, VCE=10V IC=50mA, VCE=10V IC=100mA, VCE=10V IC=10mA, IB=1mA IC=20mA, IB=2mA IC=30mA, IB=3mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=20mA, IB=2mA IC=30mA, IB=3mA VCB=20V, IE=0, f=1MHz IC=10mA, VCE=20V, f=20MHz IC=100mA, VCE=10V 40 35 50 50 45 25 Mi n . 250 250 6 50 50 Typ. Ma x . Units V V V nA nA
300 220 0.3 0. 35 0.5 1 0. 75 0. 85 0.9 6 200 2 V V V V V V V pF MHz V
VCE (sat)
Collector-Emitter Saturation Voltage
VBE (sat)
Base-Emitter Saturation Voltage
Co b fT VBE(on)
Output Capacitance Current Gain Bandwidth Product Base Emitter On Voltage
* Pulse Test: Pulse Width300µs, Duty Cycle2%
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
2N6515
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
VCE = 10V
1 .2
IC = 10 IB
1 .0
hFE, DC CURRENT GAIN
100
2N6515, 2N6516
0 .8
2N6517
VBE(sat)
0 .6
10
0 .4
0 .2
V CE(sat)
1
0 .0
1
10
100
1
10
100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
100
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
1 000
IE = 0 f=1MHz
VC E = 20V
Cob[pF], CAPACITANCE
10
1 00
1
10
0.1
1
1
10
100
1
10
1 00
VCB[V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Base Capacitance
Figure 4. Current Gain Bandwidth Product
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
2N6515
Package Demensions
TO-92
4.58 0.15
+0.25
0.46
14.47 ±0.40
±0.10
4.58 ±0.20
1.27TYP [1.27 ±0.20] 3.60
±0.20
1.27TYP [1.27 ±0.20]
0.38 0.05
+0.10
3.86MAX
1.02 ±0.10
0.38 0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST® OPTOPLANARTM
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM Hi SeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM
PACMANTM POPTM Power247TM PowerTrench® QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER® SMART STARTTM
StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET® VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve d esign. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
P re l i m i n a r y
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H3
Others parts begin by 2n
2N-1 2N-2 2N-3 2N-4 2N-5 2N-6 2N-7 2N-8 2N-9 2N-10 2N-11 2N-12 2N-13 2N-14 2N-15 2N-16 2N-17 2N-18 2N-19 2N-20 2N-21 2N-22 2N-23 2N-24 2N-25 2N-26 2N-27 2N-28 2N-29 2N-30 2N-31
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