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Details, datasheet, quote on part number:2N6790TXV
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Datasheet text preview:
2N6790
Data Sheet N ov e m be r 1998 File Number 1900.2
3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET
The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This device can be operated directly from an integrated circuit.
Features
· 3.5A, 200V · rDS(ON) = 0.800 · SOA is Power Dissipation Limited · Nanosecond Switching Speeds · Linear Transfer Characteristics · High Input Impedance · Majority Carrier Device
Ordering Information
PART NUMBER 2N6790 PACKAGE TO-205AF BRAND 2N6790
· Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
NOTE: When ordering, include the entire part number.
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN (CASE)
SOURCE
GATE
©2001 Fairchild Semiconductor Corporation
2N6790 Rev. A
2N6790
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified 2N6790 200 200 3.5 2.25 14 ±20 3.5 14 20 0.16 -55 to 150 300 260 UNITS V V A A A V A A W W/oC oC
oC oC
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulse Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Above TC = 25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 125oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS IGSS VDS(ON) rDS(ON) VSD gfs CISS COSS CRSS td(ON) tr td(OFF) tf SOA VDS = 160V, ID = 125mA VDS = 5.7V, ID = 3.5A ID = 2.25A VGS 74V, RG = 50 TEST CONDITIONS ID = 0.25mA, VGS = 0V VGS = VDS, ID = 1.0mA VDS = 200V, VGS = 0V VDS = 160V, VGS = 0V TC = 125oC VGS = ±20V, VDS = 0 ID = 3.5A, VGS = 10V ID = 2.25A, VGS = 10V ID = 2.25A, VGS = 10V TC = 125oC IS = 3.5A, VGS = 0V ID = 2.25A, VDS = 5V VGS = 0V, VDS = 25V f = 1MHz MIN 200 2 0.7 1.5 200 60 15 20 20 Free Air Operation TYP .5 2.25 450 150 40 MAX 4 250 1000 100 2.8 0.800 1.5 1.5 4.5 600 300 80 40 50 50 50 6.25 175 UNITS V V µA µA nA V V S pF pF pF ns ns ns ns W W
oC/W oC/W
Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero-Gate Voltage Drain Current
Gate to Source Leakage Current Drain to Source On-Voltage (Note 2) Drain to Source On Resistance
Diode Forward Voltage Forward Transconductance (Note 2) Input Capacitance Output Capacitance Reverse-Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Safe Operating Area
Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
RJC RJA
Source to Drain Diode Specifications
PARAMETER Reverse Recovery Time Reverse Recovered Charge NOTES: 2. Pulse test: pulse width 300µs, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). SYMBOL trr QRR TEST CONDITIONS TJ = 150oC, ISD = 3.5A, dlSD/dt = 100A/µs TJ = 150oC, ISD = 3.5A, dlSD/dt = 100A/µs MIN TYP 350 2.3 MAX UNITS ns µC
©2001 Fairchild Semiconductor Corporation
2N6790 Rev. A
2N6790 Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 ID, DRAIN CURRENT (A)
Unless Otherwise Specified
5
4
3
0.6 0.4
2
0.2 0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150
1
0 25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
2 1.0 ZJC, NORMALIZED THERMAL IMPEDANCE 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 10-5 SINGLE PULSE 10-4
PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x ZJC x RJC + TC 0.1 10-2 10-3 T1, RECTANGULAR PULSE DURATION (s) 1 10
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
50 OPERATION IN THIS AREA LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) 10 ID, DRAIN CURRENT (A) 10µs 100µs 1.0ms 1 10ms TC = 25oC 0.1 TJ = MAX RATED SINGLE PULSE 0.05 1 10 100 VDS, DRAIN TO SOURCE (V) 100ms DC 0 1000 0 12
10V
8V 80µs PULSE TEST
7V 8 VGS = 6V 4 5V 4V 25 50 75 VDS, DRAIN TO SOURCE VOLTAGE (V) 100
FIGURE 4. FORWARD BIAS SAFE OPERATING AREAS
FIGURE 5. OUTPUT CHARACTERISTICS
©2001 Fairchild Semiconductor Corporation
2N6790 Rev. A
2N6790 Typical Performance Curves
12
Unless Otherwise Specified (Continued)
ID(ON), ON-STATE DRAIN CURRENT (A)
80µs PULSE TEST
16 10V 9V 8V VGS = 7V VDS > ID(ON) x rDS(ON) MAX 80µs PULSE TEST 12 -55oC
25oC
ID, DRAIN CURRENT (A)
8
125oC 8
6V 4 5V
4
4V 0 0 2 4 6 8 VDS, DRAIN TO SOURCE VOLTAGE (V) 10
0
2 4 6 VGS, GATE TO SOURCE VOLTAGE (V)
8
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
1.5 rDS(ON), DRAIN TO SOURCE ON RESISTANCE ()
NORMALIZED ON RESISTANCE
PULSE DURATION = 2.0µs INITIAL TJ = 25oC VGS = 10V
2.2 ID = 2A VGS = 10V 1.8
1.0
1.4
VGS = 20V 0.5
1.0
0.6
0 0 5 10 ID, DRAIN CURRENT (A) 15 20
0.2 -40 0 40 80 120 150 TJ, JUNCTION TEMPERATURE (oC)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE
1000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS = CDS + CGD
1.15 C, CAPACITANCE (pF)
800
1.05
600 CISS
0.95
400
0.85
200 COSS CRSS 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 50
0.75
0 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
©2001 Fairchild Semiconductor Corporation
2N6790 Rev. A
2N6790 Typical Performance Curves
5.0 80µs PULSE TEST gfs, TRANSCONDUCTANCE (S) 4.25 3.75 3.0 2.25 1.50 0.75 0 0 2 4 6 8 10 ID, DRAIN CURRENT (A) 12 14 TJ = 25oC TJ = 125oC
Unless Otherwise Specified (Continued)
IDR, REVERSE DRAIN CURRENT (A)
TJ = -55oC
102 TJ = 25oC TJ = 150oC
10
TJ = 150oC TJ = 25oC 1 0 1 2 3 VSD, SOURCE TO DRAIN VOLTAGE (V) 4
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20 VGS, GATE TO SOURCE VOLTAGE (V) ID = 7A VDS = 160V VDS = 100V VDS = 40V
15
10
5
0 0 4 8 12 16 20 Qg, TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
©2001 Fairchild Semiconductor Corporation
2N6790 Rev. A
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