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Part: 2N6796TX
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Description:
Company: Fairchild Semiconductor
Datasheet: Download 2N6796TX datasheet File size : 140 kB
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2N6796
Data Sheet N ov e m be r 1998 File Number 1594.2
8A, 100V, 0.180 Ohm, N-Channel Power MOSFET
The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
Features
· 8A, 100V · rDS(ON) = 0.180 · SOA is Power Dissipation Limited · Nanosecond Switching Speeds · Linear Transfer Characteristics · High Input Impedance · Majority Carrier Device
Ordering Information
PART NUMBER 2N6796 PACKAGE TO-205AF BRAND 2N6796
· Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
NOTE: When ordering, use the entire part number.
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN (CASE)
SOURCE
GATE
©2001 Fairchild Semiconductor Corporation
2N6796 Rev. A
2N6796
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified 2N6796 100 100 8 5 32 ±20 8 32 25 0.20 -55 to 150 300 260 UNITS V V A A A V A A W W/oC oC
oC oC
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS Pulse Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 125oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS VDS(ON) IGSS rDS(ON) VSD gfs td(ON) tr td(OFF) tf CISS COSS CRSS RJC RJA SOA Free Air Operation VDS = 80V, ID = 310mA VDS = 3.12V, ID = 8A VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11) TEST CONDITIONS ID = 0.25mA, VGS = 0V VGS = VDS, ID = 0.5mA VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TC = 125oC ID = 8A, VGS = 10V VGS = ±20V ID = 5A, VGS = 10V ID = 5A, VGS = 10V, TC = 125oC TC = 25oC, IS = 8A, VGS = 0V VDS = 5V, ID = 5A VDD 30V, ID = 5A, RG = 50 (Figure 17) MOSFET Switching Times are Essentially Independent of Operating Temperature MIN 100 2 0.75 3 350 150 50 25 25 TYP 0.14 5.5 600 300 100 MAX 4 250 1000 1.56 ±100 0.180 0.350 1.5 9 30 75 40 45 900 500 150 5 175 UNITS V V µA µA V nA V S ns ns ns ns pF pF pF
oC/W oC/W
Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2)
Diode Forward Voltage (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Safe Operating Area
W W
Source to Drain Diode Specifications
PARAMETER Reverse Recovery Time Reverse Recovered Charge NOTES: 2. Pulse test: pulse width 300µs, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). SYMBOL trr QRR TEST CONDITIONS TJ = 150oC, ISD = 8A, dISD/dt = 100A/µs TJ = 150oC, ISD = 8A, dISD/dt = 100A/µs MIN TYP 300 1.5 MAX UNITS ns µC
©2001 Fairchild Semiconductor Corporation
2N6796 Rev. A
2N6796 Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 ID, DRAIN CURRENT (A)
Unless Otherwise Specified
10
8
6
0.6 0.4
4
0.2 0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150
2
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
1.0 ZJC, NORMALIZED THERMAL IMPEDANCE 0.5 0.2 PDM 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 1 10
t , RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
100 OPERATION IN THIS AREA IS LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10µs 100µs 1ms
35 10V 30 25 8V 20 15 10 5 0 1000 7V 6V 5V 4V 0 10 20 30 40 50 9V PULSE DURATION = 80µs
10
1 TC = 25oC TJ = MAX RATED SINGLE PULSE
10ms 100ms DC
-0.1 -1
10 100 VDS, DRAIN TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
©2001 Fairchild Semiconductor Corporation
2N6796 Rev. A
2N6796 Typical Performance Curves
35 30 ID, DRAIN CURRENT (A) 25 20 15 10 5 0 0 1 9V 8V 7V 6V 5V 4V 2 3 5 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 6
Unless Otherwise Specified (Continued)
PULSE DURATION = 80µs VGS = 10V ID, DRAIN CURRENT (A)
35 30 25 20 15 10 5 0
80µs PULSE TEST
TJ = 125oC TJ = 25oC TJ = -55oC
0
2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)
10
FIGURE 6. SATURATION CHARACTERISTICS
0.6 rDS(ON), ON-STATE RESISTANCE () 0.5 0.4 0.3 0.2 VGS = 20V 0.1 0 NORMALIZED ON-RESISTANCE 2.00 1.75 1.50 1.25 1.00 0.75 0.50
FIGURE 7. TRANSFER CHARACTERISTICS
VGS = 10V ID = 4A
VGS = 10V
0
10
20 30 40 ID, DRAIN CURRENT (A)
50
60
0.25 -80
-40
0 40 120 80 TJ , JUNCTION TEMPERATURE (oC)
160
NOTE: Heating effect of 2µs pulse is minimal. FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
1.15 NORMALIZED ON-RESISTANCE 1.10
2000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD
1600 1.05 1.00 0.95 0.90 0.85 0.80 -80 0 -40 0 40 80 120 TJ , JUNCTION TEMPERATURE (oC) 160 C, CAPACITANCE (pF)
1200
800
CISS
400
COSS CRSS 0 10 20 30 40 50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
©2001 Fairchild Semiconductor Corporation
2N6796 Rev. A
2N6796 Typical Performance Curves
10 gfs, TRANSCONDUCTANCE (S)
Unless Otherwise Specified (Continued)
ISD, SOURCE TO DRAIN CURRENT (A)
80µs PULSE TEST
5
8
TJ = -55oC TJ = 25oC TJ = 125oC
2 10 5
6
4
TJ = 150oC
TJ = 25oC
2
2 1
0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) 30 35
0
0.5 1.0 1.5 2.0 2.5 VSD, SOURCE TO DRAIN VOLTAGE (V)
3.0
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20 ID = 18A VGS, GATE TO SOURCE (V) VDS = 20V VDS = 50V VDS = 80V
15
10
5
0 0 8 16 24 Qg , TOTAL GATE CHARGE (nC) 32
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
©2001 Fairchild Semiconductor Corporation
2N6796 Rev. A
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