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Part: 2N7002MTF
Category:
Description: 60V N-channel Small Signal MOSFET
Company: Fairchild Semiconductor
Datasheet: Download 2N7002MTF datasheet File size : 62 kB
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Datasheet text preview:
Advanced Small Signal MOSFET
FEATURES
! Lower RDS(on) ! Improved Inductive Ruggedness ! Fast Switching Times ! Lower Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability
2N7002MTF
BVDSS = 60 V RDS(on) = 5.0 ID = 200 mA
SOT-23
Product Summary
Part Number 2N7002 BVDSS 60V RDS(on) 5.0 ID 115mA
1.Gate 2. Source 3. Drain
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS PD TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25) Continuous Drain Current (TC=100) Drain Current-Pulsed Gate-to-Source Voltage Total Power Dissipation (TC=25) Linear Derating Factor Operating Junction and Storage Temperature Range
Value 60 115 73 800 ±20 0.2 0.16 - 55 to +150
Units V mA mA V W W/
Thermal Resistance
Symbol RJA Characteristic Junction-to-Ambient Typ. -M ax. 62.5 Units /W
Rev. A1
2N7002MTF
Symbol BVDSS VGS(th) IGSS Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage, Forward Gate-Source Leakage, Reverse Drain-to-Source Leakage Current On-State Drain-Source Current Static Drain-Source On-State Resistance Min. 60 1.0 0.5 0.08 Typ. -
N-CHANNEL Small Signal MOSFET
Electrical Characteristics (TC=25 unless otherwise specified)
Max. Units 2.5 100 -100 1.0 500 5.0 50 25 5 20 20 ns VDD = 30V, ID = 0.2A RG = 25 pF VDS = 25V, VGS = 0V, f = 1.0MHz A S V V nA Test Condition VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = 20V VGS = -20V VGS = 40V VGS = 40V, TC = 125 VDS = 10V, VGS = 10V VGS = 10V, ID = 0.5A VDS = 15V, ID = 0.2A
IDSS ID(ON) RDS(on) g fs Ciss Coss Crss td ( o n ) tr td(off) tf
µA
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Source-Drain Diode Ratings and Characteristics
Symbol IS ISD VSD Characteristic Continuous Source Current Pulse Source Current Diode Forward Voltage Min. Typ. Max. Units 115 800 1.5 mA mA V Test Condition Integral reverse pn-diode In the MOSFET TA = 25 , IS = 115mA VGS = 0V
Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature Pulse Test : Pulse Width = 250s, Duty Cycle 2% Essentially Independent of Operating Temperature
N-CHANNEL Small Signal MOSFET
2N7002MTF
2N7002MTF
N-CHANNEL Small Signal MOSFET
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