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Details, datasheet, quote on part number:2N7051
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Datasheet text preview:
2N7051
2N7051
NPN Darlington Transistor
· This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. · Sourced from Process 06. · See 2N7052 for Characteristics. T O -9 2
1
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Storage Temperature Ratings 100 100 12 1.5 -55 ~ 150 U n i ts V V V A °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These rtings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TA=25°C unless otherwise noted
Symb o l Off Characteristics BVCEO BVCBO BVEBO ICBO ICES IEBO hFE VCE (sat) VBE (sat) fT hfe Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Small Signal Current Gain On Characteristics * VCE = 5.0V, IC = 100mA VCE = 5.0V, IC = 1.0A IC = 100mA, IB = 0.1mA IC = 100mA, VBE =5.0V IC = 100mA, VCE =5.0V VCE =5.0V, IC = 100mA, f = 20MHz 200 10 100 10,000 1, 000 20,000 1. 5 2. 0 V V M Hz Parameter Test Condition IC = 1.0mA, IB = 0 IC = 100µA, IB = 0 IE = 1.0mA, IC = 0 VCB = 80V, IE = 0 VCE = 80V, IE = 0 VEB = 7.0V, IC = 0 Mi n . 100 100 12 0. 1 0. 2 0. 1 Typ. M ax. U n i ts V V V µA µA µA Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current
Small Signal Characteristics
* Pulse Test: Pulse Width 300µs, Duty Cycle 1.0%
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
2N7051
Thermal Characteristics TA=25°C unless otherwise noted
Symbol PD RJC RJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 625 5. 0 83.3 200 Units mW mW/°C °C/W °C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
2N7051
Package Dimensions
TO-92
4.58 0.15
+0.25
0.46
14.47 ±0.40
±0.10
4.58 ±0.20
1.27TYP [1.27 ±0.20] 3.60
±0.20
1.27TYP [1.27 ±0.20]
0.38 0.05
+0.10
3.86MAX
1.02 ±0.10
0.38 0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
TRADEMARKS
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ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST® FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
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LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve d esign. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
P re l i m i n a r y
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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