|
|
Part: 2N7053
Category:
Discrete
-> Transistors
-> Bipolar
-> Darlington
-> NPN
Description: NPN Darlington Transistor
Company: Fairchild Semiconductor
Datasheet: Download 2N7053 datasheet File size : 59 kB
Request For quote: Find where to buy 2N7053
Datasheet text preview:
2N7052 / 2N7053 / NZT7053
Discrete POWER & Signal Technologies
2N7052
2N7053
NZT7053
C
E C B
TO-92
E C B E
C
TO-226
B
SOT-223
NPN Darlington Transistor
This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC T J , T s tg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
100 100 12 1.5 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJC RJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N7052 625 5.0 83.3 200
Max
2N7053 1,000 8.0 125 50 *NZT7053 1,000 8.0 125
Units
mW m W / °C °C/W °C/W
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
ã 1997 Fairchild Semiconductor Corporation
2N7052 / 2N7053 / NZT7053
NPN Darlington Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
T est Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICES IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Collector-Cutoff Current Emitter-Cutoff Current IC = 1.0 mA, IB = 0 IC = 100 µA, IE = 0 IE = 1.0 mA, IC = 0 VCB = 80 V, IE = 0 VCE = 80 V, IE = 0 VEB = 7.0 V, IC = 0 100 100 12 0.1 0.2 0.1 V V V µA µA µA
ON CHARACTERISTICS*
hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage IC = 100 mA, VCE = 5.0 V IC = 1.0 A, VCE = 5.0 V IC = 100 mA, IB = 0.1 mA IC = 100 mA, VBE = 5.0 V 10,000 1,000 20,000 1.5 2.0 V V
SMALL SIGNAL CHARACTERISTICS
FT Cc b Transition Frequency Collector-Base Capacitance IC = 100 mA, VCE = 5.0 V, VCB = 10 V,f = 1.0 MHz 2N7052 2N7053 200 10 8.0 MHz pF
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 1.0%
Typical Characteristics
100 80 60 40 20 0 0.001
125 °C
V ESAT- COLLECTOR EMITTER VOLTAGE (V) C
h FE - TYPICAL PULSED CURRENT GAIN (K)
Typical Pulsed Current Gain vs Collector Current
Collector-Emitter Saturation Voltage vs Collector Current
2 = 1000
1.6 1.2
- 40°C 25 °C 125 °C
25 °C - 40°C
0.8 0.4 0 10
0.01 0.1 I C - COLLECTOR CURRENT (A)
1
100 I C - COLLECTOR CURRENT (mA)
P 06
1000
2N7052 / 2N7053 / NZT7053
NPN Darlington Transistor
(continued)
Typical Characteristics
(continued)
VBEON - BASE EMITTER ON VOLTAGE (V)
VBESAT- BASE EMITTER VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current
2 = 1000
- 40°C 25 °C 125 °C
Base Emitter ON Voltage vs Collector Current
2 1.6 1.2 0.8 0.4 0 10
- 40°C 25 °C 125 °C
1.6 1.2 0.8 0.4 0 10
VCE= 5V
100 I C - COLLECTOR CURRENT (mA)
1000
100 I C - COLLECTOR CURRENT (mA)
P 06
1000
Collector-Cutoff Current vs. Ambient Temperature
ICBO- COLLECTOR CURRENT (nA) VCB = 80V 10
Junction Capacitance vs Reverse Bias Voltage
JUNCTION CAPACITANCE (pF) 100
100
1
10
C ib
0.1
C cb
0.01 25
50 75 100 TA - AMBIENT TEMPERATURE ( º C)
P 06
125
1 0.1
1 10 REVERSE BIAS VOLTAGE (V)
100
Typical Collector-Emitter Leakage Current vs Temperature
I CES - LEAKAGE CURRENT (nA) 1000
PD - POWER DISSIPATION (W) 1
P owe r Dissipation vs Ambie nt Temperature
VCE = 80V V BE = 0 100
SOT-22 3
0. 75
TO-9 2
TO-226
10
0 .5
1
0. 25
0.1
0
40 80 120 160 TJ - JUNCTION TEMPERATURE ( º C)
0
0
25
50 75 100 TE M PERATURE ( o C)
125
150
TO-92 Tape and Reel Data
TO-92 Packaging Configuration: Figure 1.0
TAPE and REEL OPTION
FSCINT Label sample
F AI RCHI LD SEMICONDUCTOR CORPORATION LO T:
CBVK741B019
HTB:B QTY: 10000
See Fig 2.0 for various Reeli ng Styles
NSI D:
PN2222N
SP EC:
D/C1:
D9842
SPEC REV: Q A REV:
B2
FSCINT Labe l
(F SCI NT)
5 Reels per Int ermed iate Box F63TNR Labe l Customized Label 375mm x 267mm x 375mm Int ermediate Box
F63TN R Label sample
LOT : CBVK741B019 FSID: PN222N D/C1: D9842 D/C2: QTY1: QTY2: QTY: 2000 SPEC: SPEC REV: CPN: N/F: F
Customized Labe l
(F63TNR)3
TO-92 TNR/AMMO PACKING INFROMATION
Packing Reel Style A E Ammo M P Quantity 2,000 2,000 2,000 2,000 EOL code D26Z D27Z D74Z D75Z
AMM O PACK OPTION
See Fig 3.0 for 2 Ammo Pack Options
Unit weight = 0.22 gm Reel weight with components = 1.04 kg Ammo weight with components = 1.02 kg Max quantity per intermediate box = 10,000 units
FSCINT Labe l 327mm x 158mm x 135mm Immed iate Box Customized Labe l 5 Ammo boxes per Intermediate Box F63TNR Label 333mm x 231mm x 183mm Int ermediate Box
Customized Labe l
(TO-92) BULK PACKING INFORMATION
EOL CODE J18Z J05Z NO EOL CODE DESCRIPTIO N TO-18 OPTION STD TO-5 OPTION STD TO-92 STANDARD STRAIG HT FOR: PKG 92, 94 (NON PROELECTRON SERIES), 96 TO-92 STANDARD STRAIG HT FOR: PKG 94 (PROELECTRON SERIES BCXXX, BFXXX, BSRXXX), 97, 98 LEADCLIP DIMENSION NO LEAD CLIP NO LEAD CLIP NO LEADCLIP QUANTITY 2.0 K / BOX 1.5 K / BOX 2.0 K / BOX
BULK OPTION
See Bulk Packing Informati on table Ant i-st atic Bubble Sheets
FSCINT Label
L34Z
NO LEADCLIP
2.0 K / BOX
2000 units per EO70 box for std option
114mm x 102mm x 51mm Immed iate Box
5 EO70 boxes per intermediate Box 530mm x 130mm x 83mm Int ermed iate box Customized Labe l
FSCINT Label 10, 000 units maximum per intermediate box for std option
©2001 Fairchild Semiconductor Corporation
March 2001, Rev. B1
TO-92 Tape and Reel Data, continued
TO-92 Reeling Style Configuration: Figure 2.0
Machine Option "A" (H) Machine Option "E" (J)
Style "A", D26Z, D70Z (s/h)
Style "E", D27Z, D71Z (s/h)
TO-92 Radial Ammo Packaging Configuration: Figure 3.0
FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE D74Z (M)
ORDER STYLE D75Z (P)
FIRST WIRE OFF IS EMITTER (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP
September 1999, Rev. B
Others parts begin by 2n
2N-1 2N-2 2N-3 2N-4 2N-5 2N-6 2N-7 2N-8 2N-9 2N-10 2N-11 2N-12 2N-13 2N-14 2N-15 2N-16 2N-17 2N-18 2N-19 2N-20 2N-21 2N-22 2N-23 2N-24 2N-25 2N-26 2N-27 2N-28 2N-29 2N-30 2N-31
|
|
|
