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Part: 4N26-M
Category:
Optoelectronics
-> Optocouplers
Description: 6-Pin White Package Phototransistor Coupler
Company: Fairchild Semiconductor
Datasheet: Download 4N26-M datasheet File size : 332 kB
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Datasheet text preview:
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
4N25 4N37 4N26 H11A1 4N27 H11A2 4N28 H11A3 4N35 H11A4
SCHEMATIC
1 6
4N36 H11A5
WHITE PACKAGE (-M SUFFIX)
6 1 6
2
5
3
NC
4
1 6 1
PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE
BLACK PACKAGE (NO -M SUFFIX)
6 1 6 1 6 1
DESCRIPTION
The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
FEATURES
· Also available in white package by specifying -M suffix, eg. 4N25-M · UL recognized (File # E90700) · VDE recognized (File # 94766) - Add option V for white package (e.g., 4N25V-M) - Add option 300 for black package (e.g., 4N25.300)
APPLICATIONS
· Power supply regulators · Digital logic inputs · Microprocessor inputs
© 2003 Fairchild Semiconductor Corporation
Page 1 of 15
5/7/03
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
4N25 4N37 4N26 H11A1 4N27 H11A2 4N28 H11A3 4N35 H11A4 4N36 H11A5
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter TOTAL DEVICE Storage Temperature Operating Temperature Wave solder temperature (see page 14 for reflow solder profiles) Total Device Power Dissipation @ TA = 25°C Derate above 25°C EMITTER DC/Average Forward Input Current Reverse Input Voltage Forward Current - Peak (300µs, 2% Duty Cycle) LED Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Detector Power Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VECO PD 30 70 7 150 2.0 (non-M), 1.76 (-M) V V V mW mW/°C IF VR IF(pk) PD 100 (non-M), 60 (-M) 6 3 150 (non-M), 120 (-M) 2.0 (non-M), 1.41 (-M) mA V A mW mW/°C TSTG TOPR TSOL PD -55 to +150 -55 to +100 260 for 10 sec 250 3.3 (non-M), 2.94 (-M) °C °C °C mW Symbol Value Units
© 2003 Fairchild Semiconductor Corporation
Page 2 of 15
5/7/03
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
4N25 4N37 4N26 H11A1 4N27 H11A2 4N28 H11A3 4N35 H11A4 4N36 H11A5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter EMITTER Input Forward Voltage Reverse Leakage Current DETECTOR Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current Collector-Base Dark Current Capacitance (IC = 1.0 mA, IF = 0) (IC = 100 µA, IF = 0) (IE = 100 µA, IF = 0) (VCE = 10 V, IF = 0) (VCB = 10 V) (VCE = 0 V, f = 1 MHz) BVCEO BVCBO BVECO ICEO ICBO CCE 8 30 70 7 100 120 10 1 50 20 V V V nA nA pF (IF = 10 mA) (VR = 6.0 V) VF IR 1.18 0.001 1.50 10 V µA Test Conditions Symbol Min Typ* Max Unit
ISOLATION CHARACTERISTICS
Characteristic Input-Output Isolation Voltage Isolation Resistance Isolation Capacitance Test Conditions Symbol (Non `-M', Black Package) (f = 60 Hz, t = 1 min) (`-M', White Package) (f = 60 Hz, t = 1 sec) (VI-O = 500 VDC) (VI-O = &, f = 1 MHz) (`-M' White Package) VISO RISO CISO Min 5300 7500 1011 0.5 0.2 2 Typ* Max Units Vac(rms) Vac(pk) pF pF
Note * Typical values at TA = 25°C
© 2003 Fairchild Semiconductor Corporation
Page 3 of 15
5/7/03
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
4N25 4N37 4N26 H11A1 4N27 H11A2 4N28 H11A3 4N35 H11A4 4N36 H11A5
TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
DC Characteristic Test Conditions Symbol Device 4N35 4N36 4N37 H11A1 H11A5 (IF = 10 mA, VCE = 10 V) 4N25 4N26 H11A2 H11A3 4N27 4N28 H11A4 (IF = 10 mA, VCE = 10 V, TA = -55°C) 4N35 4N36 4N37 4N35 4N36 4N37 4N25 4N26 4N27 4N28 VCE (SAT) (IC = 0.5 mA, IF = 10 mA) 4N35 4N36 4N37 H11A1 H11A2 H11A3 H11A4 H11A5 4N25 4N26 4N27 4N28 H11A1 H11A2 H11A3 H11A4 H11A5 4N35 4N36 4N37 Min 100 50 30 Typ* Max Unit
20 % 10
Current Transfer Ratio, Collector to Emitter
CTR
40
(IF = 10 mA, VCE = 10 V, TA = +100°C)
40
(IC = 2 mA, IF = 50 mA)
0.5
Collector-Emitter Saturation Voltage
0.3
V
0.4
AC Characteristic
Non-Saturated Turn-on Time
(IF = 10 mA, VCC = 10 V, RL = 100) (Fig.20)
TON
2
µs
Non Saturated Turn-on Time
(IC = 2 mA, VCC = 10 V, RL = 100) (Fig.20)
TON
2
10
µs
© 2003 Fairchild Semiconductor Corporation
Page 4 of 15
5/7/03
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
4N25 4N37 4N26 H11A1 4N27 H11A2 4N28 H11A3 4N35 H11A4 4N36 H11A5
TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.) (Continued)
AC Characteristic Test Conditions Symbol Device 4N25 4N26 4N27 4N28 H11A1 H11A2 H11A3 H11A4 H11A5 4N35 4N36 4N37 Min Typ* Max Unit
(IF = 10 mA, VCC = 10 V, RL = 100) (Fig.20) Turn-off Time TOFF
2 µs
(IC = 2 mA, VCC = 10 V, RL = 100) (Fig.20) * Typical values at TA = 25°C
2
10
© 2003 Fairchild Semiconductor Corporation
Page 5 of 15
5/7/03
Others parts begin by 4n
4N-1 4N-2
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