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Part: BAV20
Category:
Discrete
-> Diodes & Rectifiers
-> General Purpose Diodes
-> Small Signal
Description: High Voltage General Purpose Diode
Company: Fairchild Semiconductor
Datasheet: Download BAV20 datasheet File size : 67 kB
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Datasheet text preview:
BAV19 / BAV20 / BAV21
BAV19 / 20 / 21
DO-35
Color Band Denotes Cathode
Small Signal Diode
Absolute Maximum Ratings*
Symbol
VRRM IF(AV) IFSM Ts t g TJ
TA = 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature BAV19 BAV20 BAV21
Value
120 200 250 200 1.0 4.0 -65 to +200 175
Units
V V V mA A A °C °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJA Power Dissipation Thermal Resistance, Junction to Ambient
TA = 25°C unless otherwise noted
Parameter
Value
500 300
Units
mW °C/W
Electrical Characteristics
Symbol
VR
Parameter
Breakdown Voltage BAV19 BAV20 BAV21
Test Conditions
IR = 100 µA IR = 100 µA IR = 100 µA IF = 100 mA IF = 200 mA VR = 100 V VR = 100 V, TA = 150°C VR = 150 V VR = 150 V, TA = 150°C VR = 200 V VR = 200 V, TA = 150°C VR = 0, f = 1.0 MHz IF = IR = 30 mA, IRR = 3.0 mA, RL = 100
Min
120 200 250
Max
Units
V V V V V nA µA nA µA nA µA pF ns
VF IR
Forward Voltage Reverse Current BAV19 BAV20 BAV21
CT trr
Total Capacitance Reverse Recovery Time
1.0 1.25 100 100 100 100 100 100 5.0 50
2 0 0 1 Fairchild Semiconductor Corporation
B AV 1 9 / 2 0 / 2 1 , Rev. C
BAV19 / BAV20 / BAV21
Small Signal Diode
(continued)
Typical Characteristics
3 25
T a = 2 5 °C
50
° Ta= 25 °C
R e v e r s e Current, I R [nA]
R e v e r s e Voltage, V [V] R
40
30
3 00
20
10
2 75
3
5
10
20
30
50
100
0
55
Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100uA
10 0 90 80 70 60 50 40 30 20
R e v e r s e C u r r e n t , I R [uA]
R e v e r s e Voltage, V R [V]
GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature
100
Figure 2. Reverse Current vs Reverse Voltage IR - 55 to 205 V
Ta= 25 ° C
Ta= 25 ° C
4 50
Forward Voltage, V R [mV]
18 0 200
R e v e rs e Current, I R [nA]
4 00
3 50
3 00
2 50
R e v e rs e Voltage, V R [V]
220
240
255
1
2
3
5
10
20
30
50
100
GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature
F orwa rd Current, IF [uA]
Figure 3. Reverse Current vs Reverse Roltage IR - 180 to 225 V
Figure 4. Forward Voltage vs Forward Current VF - 1.0 to 100uA
70 0
Ta= 25 °C
1.4 1.3
° Ta= 25 C
Forw ard Voltage, V F [mV]
65 0
F orward Voltage, VF [mV]
1.2 1.1 1.0 0.9 0.8 0.7
60 0
55 0
50 0
45 0
0. 1
0.2
0.3
0.5
1
2
3
5
10
10
20
30
50
100
200
300
500
800
F o rw a rd Current, I F [mA]
F o r w a r d Current, IF [mA]
Figure 5. Forward Voltage vs Forward Current VF - 0.1 to 10mA
Figure 6. Forward Voltage vs Forward Current VF - 10 to 800mA
B AV 1 9 / 2 0 / 2 1 , Rev. C
BAV19 / BAV20 / BAV21
Small Signal Diode
(continued)
Typical Characteristics
(continued)
900 800
1 .3
T a = 25 °C
F o r w a r d Voltage, V [mV] F
700 600 500 400
T a = -40°°C
T o t a l Capacitance [pF]
1 3 10
1 .2
T a = 25 ° C
1 .1
1 .0
Ta= +80 ° C
300 200 100 0 .0 0 1
0 .9
0.003
0.01
0.03
0.1
0.3
0 .8
F o r w a r d C u r r e n t, I F [m A ]
0
2
4
6
8
10
12
14
R e v e r s e Voltage [V]
Figure 7. Forward Voltage vs Ambient Temperature VF - 1.0 uA - 10 mA (-40 to +80 Deg C)
50 4 00
Figure 8. Total Capacitance
R e v e r s e Recovery Time [nS]
3 00
Current [mA]
40
2 00
IF
(A V
)
-A V
ER
AG
30
ER E
CT
1 00
IF I E
DC U
RR
I F = I R = 30 mA R lo o p = 100 Ohms
20 1 .0 1 .5 2 .0 2 .5 3 .0 0 0 50 1 00
EN
TmA
1 50
R e v e r s e Recovery Current, I rr [mA]
A m b i e n t Temperature, T A [ C]
Figure 9. Reverse Recovery Time vs Reverse Recovery Current
Figure 10. Average Rectified Current (IF(AV)) versus Ambient Temperature (TA)
500
Power Dissipation, P [mW] D
400
DO-35 Pkg
300
SOT-23 Pkg
200
100
0
0
50
100
150
200
Average Temperature, IO [ C]
Figure 11. Power Derating Curve
B AV 1 9 / 2 0 / 2 1 , Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLT TM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST ® FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench ® QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER ®
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET ®
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STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS D e f i n i t i o n of Terms D a t a s h e e t Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4
Others parts begin by ba
BA-1 BA-2 BA-3 BA-4 BA-5 BA-6 BA-7 BA-8 BA-9 BA-10 BA-11 BA-12 BA-13 BA-14 BA-15 BA-16 BA-17 BA-18
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