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Details, datasheet, quote on part number:BC183LC
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| Part: | BC183LC |
| Category: | Discrete => Transistors => Bipolar => General Purpose => NPN |
| Description: | NPN General Purpose Amplifier |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download BC183LC datasheet File size : 71 kB |
| Request For quote: | Find where to buy BC183LC
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Datasheet text preview:
BC183LC
BC183LC
NPN General purpose Amplifier.
1
T O -9 2
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings TC=25°C unless otherwise noted
Sym b o l VCBO VCEO VEBO IC PC TJ TSTG Par a m e ter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 45 30 5 100 350 150 - 55 ~ 150 U n i ts V V V mA mW °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE P arameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC = 10µA IC = 2mA IE = 10µA VCB = 30V VEB = 3V VCE = 5V, IC = 10µA VCE = 5V, IC = 2mA VCE = 5V, IC = 100mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA IC = 100mA, IB = 5mA VCE = 5V, IC = 2mA VCE = 10V, f = 1MHz VCE = 5V, IC = 10mA VCE = 5V, IC = 2mA f = 1KHz VCE = 5V, IC = 200mA RG = 2K, f = 1KHz 150 450 900 10 dB 0.55 40 100 80 Min. 45 30 5 15 15 850 0. 25 0.6 1.2 0.7 5 V V V pF MHz Typ. Max. Units V V V nA nA
VCE(sat) VBE(sat) VBE(on) COB fT hfe NF
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current gain Bandwidth Product Small Signal Current Gain Noise Figure
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
BC183LC
Typical Characteristics
1200 1000 800 600
25 °C 125 °C
VCESAT - COLLECTOR-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
VCE = 5.0V
0.3 0. 25 0.2
125 °C
= 10
0. 15 0.1 0. 05 0.1
25 °C - 40 °C
400
- 40 °C
200 0 0.01 0.03 0.1 0.3 1 3 10 30 I C - COLLECTOR CURRENT (mA) 100
1 10 I C - COLLECTOR CURRENT (mA)
100
Figure 1. Typical Pulsed Current Gain vs Collector Current
VBESAT - COLLECTOR-EMITTER VOLTAGE (V)
Figure 2. Collector-Emitter Saturation Voltage vs Collector Current
VBEO N- BASE-EMITTER ON VOLTAGE (V)
1
- 40 °C
1 0.8 0.6
125°C
- 40 °C 25 °C
0.8 0.6 0.4 0.2 0.1
25 °C
125°C
0.4
V CE = 5.0 V
= 10
100
0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 40
1 10 I C - COLLECTOR CURRENT (mA)
Figure 3. Base-Emitter Saturation Voltage vs Collector Curent
Figure 4. Base-Emitter ON Voltage vs Collector Current
I CBO - COLLE CTOR CURRENT (nA)
10 VCB = 45V
CAPACI TANCE (pF)
5 f = 1.0 MHz 4 3
C
1
2 1 0
C ob
0.1 25
50 75 10 0 12 5 T A - AMBIE NT TEMP ER ATUR E ( ° C)
15 0
0
4
8 12 16 REVERSE BIAS VOLTAGE (V)
20
Figure 5. Collector-Cutoff Current vs Ambient Temperature
Figure 6. Input and Output Capacitance vs Reverse Bias Voltage
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
BC183LC
Typical Characteristics
- COLLECTOR VOLTAGE (V) 10 7 5
15 0 MHz 17 5 MHz
(Continued)
CH AR AC TER IS TIC S RELATI VE TO VALUE AT T A = 25 C
°
1 00 0 10 0
3 2
12 5 MHz 10 0 MHz 7 5 MHz
10
V
1 0.1
1 10 I C - COLLECTOR CURRENT (mA)
100
1 25
50 75 10 0 12 5 T A - AMBIE NT TEMPERATURE ( °C)
15 0
Figure 7. Contours of Constant Gain Bandwidth Product (fT)
Figure 8. Normalized Collector-Cutoff Current vs Ambient Temperaure
5
V CE = 5.0 V
10
NF - NOISE FIGURE (dB)
NF - NOISE FIGURE (dB)
4 3 2 1 0
BANDWIDTH = 15.7 kHz µ
8
I C = 200 µA, R S = 10 k µ I C = 100 µA, R S = 10 k µ
I C = 100 µA
µ
6
µ
I
= 30 µA
I C = 1.0 mA, R S = 500 I C = 1.0 mA, R S = 5.0 k
4
µ µ I C = 10 µA
2, 000 5, 000 10, 000 20, 000 50, 000 100, 000
2
V CE = 5.0V 10 100
1, 000
R S - SOURCE RESISTANCE ( )
µ
0 0.0001
0. 001
0. 01 0. 1 1 f - FREQUENCY (MHz)
Figure 9. Wideband Noise Frequency vs Source Resistance
µ µ
625 P D - POWER DISSIPATION (mW)
Figure 10. Noise Figure vs Frequency
R S - SOURCE RESISTANCE ( )
10, 000
TO- 92
500 375 250 125 0
3.0 dB
5, 000
4.0 dB
2, 000
SOT-23
6.0DB
1, 000 500
8.0 dB
V CE = 5.0 V
10 dB
200 100
f = 100 Hz B AN DWI DT H = 20 Hz
12 dB 14 dB
0
25
50 75 100 TEMP E RATUR E (o C)
125
150
1
10 100 I C - COLLECTOR CURRENT ( µ A)
1, 000
Figure 11. Collector-Cutoff Current vs Ambient Temperature
Figure 12. Contours of Constant Narrow Band Noise Figure
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
µ
BC183LC
Typical Characteristics
(Continued)
R S - SOURCE RESISTANCE ( )
10, 000
R S - SOURCE RESISTANCE ( )
10000 5000 2000 1000 500 200 100 1 V CE = 5.0V f = 10kHz BANDWIDTH = 2.0kHz
1 .0 dB 2 .0 dB 3 .0 dB 4 .0 dB 6 .0 dB 8 .0 dB
5, 000
2.0 DB
2, 000
3.0 dB
1, 000
4.0 dB
500
V CE = 5.0 V f = 1.0 kHz B AN DWI DT H 200 = 200 Hz
6.0 dB 8.0 dB
µ
µ
100
1 µ
10 100 I C- COLLECTOR CURRENT ( µ A)
1, 000
10 100 I C - COLLECTOR CURRENT ( A)
1000
Figure 13. Contours of Constant Narrow Band Noise Figure
CHARACTE RI STIC S RE LATIV E TO VALUE (TA =25° C)
Figure 14. Contours of Constant Narrow Band Noise Figure
R S - SOURCE RESISTANCE ( )
10000 5000 2000 1000
2 .0 dB
1. 5 1. 4 1. 3 1. 2 1. 1 1 0. 9 0. 8 0. 7 0. 6 0. 5 -10 0
h oe h fe h re h ie
V = 5.0V f = 1.0kHz I = 1.0mA
h ie
h re h fe h oe
3 .0 dB 5.0 dB 6.0 dB
4 .0 dB 500 VCE = 5.0V f = 1.0 MHz 200 BANDWIDTH 7 .0 dB = 200kHz 8 .0 dB 100 0. 01 0.1 1 I C - COLLECTOR CURRENT ( µ A)
10
-5 0 0 50 10 0 T J - JUNCTIO N TEMP ER ATUR E ( C)
15 0
Figure 15. Contours of Constant Narrow Band Noise Figure µ
CHARACTE RI STIC S RE LATIV E TO VALUE (TA =25° C)
Figure 16. Typical Common Emitter Characteristics
CHARACTERISTICS RELATIVE TO VALUE(I C =1mA)
1. 5 1. 4 1. 3 1. 2 1. 1 1 0. 9 0. 8 0. 7 0. 6 0. 5 -100
h oe h fe h re h ie
100 f = 1.0kHz 10
h ie and h h re h oe
V = 5.0V f = 1.0kHz I = 1.0mA
h ie
h re h fe h oe
1
h oe h fe
0.1
h ie
-5 0 0 50 10 0 T J - JUNCTIO N TEMP ER ATUR E ( C)
15 0
0. 01 0.1
0.2
0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA)
50
100
Figure 17. Typical Common Eimtter Characteristics
Figure 18. Typical Common Emitter Characteristics
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
BC183LC
Package Dimensions
TO-92
4.58 0.15
+0.25
0.46
14.47 ±0.40
±0.10
4.58 ±0.20
1.27TYP [1.27 ±0.20] 3.60
±0.20
1.27TYP [1.27 ±0.20]
0.38 0.05
+0.10
3.86MAX
1.02 ±0.10
0.38 0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
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