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Part: BC637
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> NPN
-> Epitaxial
Description: NPN Epitaxial Silicon Transistor
Company: Fairchild Semiconductor
Datasheet: Download BC637 datasheet File size : 190 kB
Request For quote: Find where to buy BC637
Datasheet text preview:
BC635/637/639
BC63 5 /637/639
Switching and Amplifier Applications
· Complement to BC636/638/640
1
T O -9 2
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCER P arameter Collector-Emitter Voltage at RBE=1K : BC635 : BC637 : BC639 Collector-Emitter Voltage : BC635 : BC637 : BC639 Collector-Emitter Voltage : BC635 : BC637 : BC639 Emitter-Base Voltage Collector Current Peak Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature 45 60 80 5 1 1.5 100 1 150 -65 ~ 150 V V V V A A mA W °C °C 45 60 100 V V V Value 45 60 100 Units V V V
VCES
VCEO
VEBO IC ICP IB PC TJ TSTG
· PW=5ms, Duty Cycle=10%
Electrical Characteristics Ta=25°C unless otherwise noted
S ymb o l BVCEO Parameter Collector-Emitter Breakdown Voltage : BC635 : BC637 : BC639 Collector Cut-off Current Emitter Cut-off Current DC Current Gain : All : BC635 : BC637/BC639 : All Test Condition IC=10mA, IB=0 Min. 45 60 80 0.1 0.1 25 40 40 25 250 160 0. 5 1 100 V V M Hz Typ. M ax. U n i ts V V V µA µA
ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(on) fT
VCB=30V, IE=0 VEB=5V, IC=0 VCE=2V, IC=5mA VCE=2V, IC=150mA VCE=2V, IC=500mA IC=500mA, IB=50mA VCE=2V, IC=500mA VCE=5V, IC=10mA, f=50MHz
Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002
BC635/637/639
Typical Characteristics
200
IB = 1.8 mA IB = 1.6 mA
1 000
IC[mA], COLLECTOR CURRENT
VC E = 2V
160
120
IB = 1.2 mA IB = 1.0 mA
hFE, DC CURRENT GAIN
50
IB = 1.4 mA
1 00
80
IB = 0.8 mA IB = 0.6 mA
40
IB = 0.4 mA IB = 0.2 mA
0
0
10
20
30
40
10
1
10
1 00
1 000
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
1000
IC = 10 IB
1
V BE(sat)
IC[mA], COLLECTOR CURRENT
VCE = 2V
100
0 .1
10
V CE(sat)
0 .0 1
1
10
100
1000
1 0 .0
0 .2
0 .4
0 .6
0 .8
1 .0
1 .2
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
10 0
f=1MHz
Cob[pF], CAPACITANCE
10
1
1
10
10 0
V CB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002
BC635/637/639
Package Dimensions
TO-92
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST® FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC® OPTOPLANARTM
PACMANTM POPTM Power247TM PowerTrench® QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER® SMART STARTTM
SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET® VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve d esign. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
P re l i m i n a r y
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
Others parts begin by bc
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