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Part: BC846A-MR
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> NPN
Description: Quantity Reel 500 Width Tape 8 MM SOT-23 Transistors
Company: Fairchild Semiconductor
Datasheet: Download BC846A-MR datasheet File size : 63 kB
Request For quote: Find where to buy BC846A-MR
Datasheet text preview:
BC846A / BC846B / BC847A / BC847B / BC847C
BC846A BC846B
BC847A BC847B BC847C
C
C
E
E
SOT-23
Mark: 1A. / 1B.
B
SOT-23
Mark: 1E. / 1F. / 1G.
B
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 µA to 50 mA. Sourced from Process 07.
Absolute Maximum Ratings*
Symbol
VCEO VCES VEBO IC T J , T s tg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
3
Value Units
V V V V V mA °C 65 45 80 50 6.0 100 -55 to +150
Parameter
BC846 series BC847 series BC846 series BC847 series
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD R J A
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient
Max
*BC846 / BC847 325 2.8 357
Units
mW mW /°C °C/W
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1 9 9 7 Fairchild Semiconductor Corporation
BC846A / BC846B / BC847A / BC847B / BC847C
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
T est Conditions
Mi n
Max
Units
OFF CHARACTERISTICS
V (B R )C E O V (B R )C E S V (B R )E B O ICB O Collector-Em itter Breakdown V olt age Collector-Base Breakdown Voltage Em itter-Base Breakdown Voltage Collector-Cutoff Current IC = 10 mA, IB = 0 IC = 10 µA, IE = 0 846A / B 847A / B 846A / B 847A / B 65 45 80 50 6. 0 15 5. 0 V V V nA µA
IE = 10 µA, IC = 0 VCB = 30 V VCB = 30 V, TA = 150°C
ON CHARACTERISTICS
hFE DC Current Gain IC = 2.0 mA, VCE = 5.0 V 846A / 847A 846B / 847B 847C IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5.0 mA IC = 2.0 mA, VCE = 5.0 V IC = 10 mA, VCE = 5.0 V 110 200 420 220 450 800 0.25 0.6 0.70 0.77
VCE(sat) VBE(on)
Collector-Emitter Saturation Voltage Base-Emitter On Voltage
0.58
V V V V
SMALL SIGNAL CHARACTERISTICS
fT C obo NF Current Gain - Bandwidth Product Output Capacitance Noise Figure IC = 10 mA, VCE = 5.0, f = 100 MHz VCB = 10 V, f = 1.0 MHz IC = 0.2 mA, VCE = 5.0, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz 100 4.5 10 MHz pF dB
Typical Characteristics
Typica l Pulsed Current Gain vs Collector Current
1200 1000 800 600
25 °C 125 °C
VCESAT - COLLECTOR-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Co llector-Emitter Saturation Voltage vs Collector Current
0.3 0. 25 0.2
125 °C
V CE = 5.0 V
= 10
0. 15 0.1 0. 05 0.1
25 °C - 40 °C
400
- 40 °C
200 0 0.01 0.03 0.1 0.3 1 3 10 30 I C - COLLECTOR CURRENT (mA) 100
1 10 I C - COLLECTOR CURRENT (mA)
100
BC846A / BC846B / BC847A / BC847B / BC847C
NPN General Purpose Amplifier
(continued)
Typical Characteristics
VBESAT - COLLECTOR-EMITTER VOLTAGE (V)
1
- 40 °C
VBEO N- BASE-EMITTER ON VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current
Base-Emitter ON Voltage vs Collector Current
1 0.8 0.6
125 °C - 40 °C 25 °C
0.8 0.6 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100
25 °C 125 °C
= 10
0.4
V CE = 5.0 V
0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 40
Coll ect or -Cutoff Current vs Ambient Temperature
I CBO - COLLE CTOR CURRENT (nA) 10 VCB = 45V
CAPACI TANCE (pF) 4 3 5
Input and Output Capacitance vs Reverse Bias Voltage
f = 1.0 MHz
1
C te
3
C ob
2 1 0
0.1 25
50 75 10 0 12 5 TA - AMBIE NT TEMP ER ATUR E ( ° C)
15 0
0
4
8 12 16 REVERSE BIAS VOLTAGE (V)
20
CH AR AC TER IS TIC S RELATI VE TO VALUE AT T A = 25 C
Nor m ali z ed Collector-Cutoff Current vs Ambient Temperature
5 NF - NOISE FIGURE (dB)
Wideba nd Noise Frequency vs Source Resistance
V CE = 5.0 V
°
1 00 0
4 3 2 1 0
BANDWIDTH = 15.7 kHz
10 0
I C = 100 µA I C = 30 µA
10
I C = 10 µA
2, 000 5, 000 10, 000 20, 000 50, 000 100, 000
1 25
50 75 10 0 12 5 T A - AMBIE NT TEMPERATURE ( °C)
15 0
1, 000
R S - SOURCE RESISTANCE ( )
BC846A / BC846B / BC847A / BC847B / BC847C
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Noise Figure vs Frequency
10
V C E - COLLECTOR VOLTAGE (V) I C = 200 µA, R S = 10 k I C = 100 µA, R S = 10 k I C = 1.0 mA, R S = 500 10 7 5
Contours of Constant Gain Bandwidth Product (f T )
17 5 MHz
NF - NOISE FIGURE (dB)
8
6
4
3 2
15 0 MHz
I C = 1.0 mA, R S = 5.0 k V C E = 5.0V
2
12 5 MHz 10 0 MHz 7 5 MHz
0 0.0001
0.001
0.01 0.1 1 f - FREQUENCY (MHz)
10
100
1 0.1
1 10 I C - COLLECTOR CURRENT (mA)
100
Contours of Constant Narrow Band Noise Figure
R S - SOURCE RESISTANCE ( )
3.0 dB
5, 000
Contours of Constant Narrow Band Noise Figure
R S - SOURCE RESISTANCE ( )
10, 000 5, 000
10, 000
4.0 dB
2, 000 1, 000 500
V CE = 5.0 V
2.0 dB
2, 000
6.0 dB 8.0 dB 10 dB
f = 100 Hz B AN DWI DT H = 20 Hz
3.0 dB
1, 000
4.0 dB
500
V CE = 5.0 V f = 1.0 kHz B AN DWI DT H 200 = 200 Hz
6.0 dB 8.0 dB
200 100
12 dB 14 dB
100
1
10 100 I C - COLLECTOR CURRENT ( µ A)
1, 000
1
10 100 I C- COLLECTOR CURRENT ( µ A)
1, 000
Contours of Constant Narrow Band Noise Figure
R S - SOURCE RESISTANCE ( ) 5000 2000 1000 500 200 100 1 V CE = 5.0V f = 10kHz BANDWIDTH = 2.0kHz R S - SOURCE RESISTANCE ( ) 10000
1 .0 dB 2 .0 dB 3 .0 dB 4 .0 dB 6 .0 dB 8 .0 dB
Contours of Constant Narrow Band Noise Figure
10000 5000 2000 1000 500
2 .0 dB
3 .0 dB 5.0 dB 6.0 dB
10 100 I C - COLLECTOR CURRENT ( µ A)
1000
VCE = 4 .0 dB 5.0V f = 1.0 MHz 200 BANDWIDTH 7 .0 dB = 200kHz 8 .0 dB 100 0. 01 0.1 1 I C - COLLECTOR CURRENT ( µ A)
10
BC846A / BC846B / BC847A / BC847B / BC847C
NPN General Purpose Amplifier
(continued)
Typical Common Emitter Characteristics
(f = 1.0 kHz)
CHAR AC TER ISTI CS R ELATI VE T VALUE(VCE =5V) O
1. 4
h fe
CHARACTE RI STIC S RE LATIV E TO VA LUE (TA =25° C)
Typ ic al Common Emitter Characteristics
1. 3
h ie
Typic al Common Emitter Characteristics
1. 5 1. 4 1. 3 1. 2 1. 1 1 0. 9 0. 8 0. 7 0. 6 0. 5 -10 0
h oe h fe h re h ie
1. 2 1. 1
h re
h oe h re h oe
VCE = 5.0V f = 1.0kHz I C = 1.0mA
h ie
h re h fe h oe
1 h ie 0. 9 0. 8 I C = 1.0mA f = 1.0kHz T A = 25°C 5 10 15 20 V CE - COLLECTOR VOLTAGE (V) 25
h fe
0
-5 0 0 50 10 0 T J - JUNCTIO N TEMP ER ATUR E (° C)
15 0
Typical Common Emitter Characteristics
CHARACTERISTICS RELATIVE TO VALUE(I C =1mA)
100 f = 1.0kHz 10
h ie and h re h re h oe
1 h oe
h fe
3
0.1
h ie
h fe
0. 01 0.1
0.2
0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA)
50
100
Others parts begin by bc
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