|Category||Discrete => Transistors => Bipolar => High Current|
|Datasheet||Download D45C11 datasheet
|Cross ref.||Similar parts: TIP42BG, D45H11|
This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. See NZT751 for characteristics.
Collector-Emitter Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient D45C11*Device mounted on FR-4 PCB X 1.5 mm; mounting pad for the collector lead min. 6 cm.
V(BR)CEO ICES IEBO Collector-Emitter Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current = 100 mA, VCB 90 V, VEB V µA
hFE VCE(sat) VBE(sat) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage 0.2 A, VCE 1.0 A, VCE mA V
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
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