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Details, datasheet, quote on part number:ES2B
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| Part: | ES2B |
| Category: | Discrete => Diodes & Rectifiers => Switching Diodes |
| Description: | 2.0A Ultra Fast Recovery Rectifier |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download ES2B datasheet File size : 52 kB |
| Request For quote: | Find where to buy ES2B
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Datasheet text preview:
ES2A - ES2D
ES2A - ES2D
Features · For surface mount applications. · Glass passivated junction. · Low profile package. · Easy pick and place. · Built-in strain relief. · Superfast recovery times for
high efficiency.
SMB/DO-214AA
COLOR BAND DENOTES CATHODE
Fast Rectifiers
Absolute Maximum Ratings*
Symbol
VRRM IF(AV) IFSM Ts t g TJ
TA = 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage Average Rectified Forward Current .375 " lead length @ TA = 110°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature
Value
2A 50 2B 100 2.0 50 -55 to +150 -55 to +150 2C 150 2D 200
Units
V A A °C °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD R J A R J L Power Dissipation Thermal Resistance, Junction to Ambient* Thermal Resistance, Junction to Lead*
Parameter
Value
1.66 75 20
Units
W °C/W °C/W
*Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
Symbol
VF trr IR CT
TA = 25°C unless otherwise noted
Parameter
2A Forward Voltage @ 2.0 A Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A Reverse Current @ rated VR TA = 25°C TA = 100°C Total Capacitance VR = 4.0 V, f = 1.0 MHz
Device
2B 0.90 20 10 350 18 2C 2D
Units
V ns µA µA pF
2 0 0 1 Fairchild Semiconductor Corporation
E S 2 A - E S 2 D , Rev. C
ES2A - ES2D
Typical Characteristics
Average Rectified Forward Current, IF [A] 2. 5
50 Forward Current, IF [A] 10
2
1. 5 1
SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.0mm) LEAD LENGTHS
1
0. 5 0
0.1
TA = 25 º C Pulse Width = 300µs µ 2% Duty Cycle
0
25
50 75 100 125 Ambient Temperature [ºC]
150
175
0.01 0.4
0.6
Figure 1. Forward Current Derating Curve
Peak Forward Surge Current, IFSM [A] 60 50 40 30 20 10 0
Figure 2. Forward Voltage Characteristics
1000
T A = 100 ºC
0.8 1 1.2 1.4 Forward Voltage, VF [V]
1.6
1.8
Reverse Current, IR [mA]
100
10
T A = 75º C
1
T A = 25º C
1
2
5 10 20 50 Number of Cycles at 60Hz
100
0.1
0
20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage [%]
Figure 3. Non-Repetitive Surge Current
60 T o t a l Capacitance, C T [pF] 50 40 30 20 10 0 0.1
Figure 4. Reverse Current vs Reverse Voltage
0.5 1 5 10 20 50 10 0 R e v e r s e Voltage, V R [V]
50 0
Figure 5. Total Capacitance
50 NONINDUCTIVE 50 NONINDUCTIVE
+0.5A
(-) Pulse Generator (Note 2)
trr
DUT
0 -0.25A
50V (approx)
50 NONINDUCTIVE
OSCILLOSCOPE (Note 1)
(+)
NOTES: 1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf. 2. Rise time = 10 ns max; Source impedance = 50 ohms.
-1.0A
1.0cm
SET TIME BASE FOR 5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
2 0 0 1 Fairchild Semiconductor Corporation E S 2 A - E S 2 D , Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLT TM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST ® FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench ® QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER ®
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET ®
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS D e f i n i t i o n of Terms D a t a s h e e t Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4
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