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Details, datasheet, quote on part number:FDC6506P
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| Part: | FDC6506P |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | Dual P-channel Logic Level PowerTrench® MOSFET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FDC6506P datasheet File size : 66 kB |
| Request For quote: | Find where to buy FDC6506P
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Datasheet text preview:
FDC6506P
February 1999
FDC6506P
Dual P-Channel Logic Level PowerTrenchTM MOSFET
General Description
These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Features · -1.8 A, -30 V. RDS(on) = 0.170 @ VGS = -10 V
RDS(on) = 0.280 @ VGS = -4.5 V
· Low gate charge (2.3nC typical). · Fast switching speed. · High performance trench technology for extremely
low RDS(ON).
· SuperSOTTM-6 package: small footprint (72% smaller Applications · Load switch · Battery protection · Power management
D2 S1 D1
5 2 4 3
than standard SO-8); low profile (1mm thick).
G2
S uperSOT
TM
-6
S2 G1
TA = 25°C unless otherwise noted
6
1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
Parameter
Ra t i n g s
-30
(Note 1a)
Units
V V A W
±20 -1.8 -10 0.96 0.9 0.7 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
130 60
°C/W °C/W
Package Outlines and Ordering Information
Device Marking .506
©1999 Fairchild Semiconductor Corporation
Device
FDC6506P
Reel Size
7''
Tape Width
8mm
Quantity
3000 units
FDC6506P Rev. C
FDC6506P
Electrical Characteristics
Symbol Off Characteristics
BVDSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V
Min
-30
Typ
Max Units
V
-20 -1 100 -100
mV/°C µA nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25°C VGS = -10 V, ID = -1.8 A VGS = -10 V, ID = -1.8 A @125°C VGS = -4.5 V, ID = -1.4 A VGS = -10 V, VDS = - 5 V VDS = -5 V, ID = -1.8 A
-1
-1.8 4 0.14 0.20 0.22
-3
V mV/°C
0.17 0.27 0.28
ID(on) gFS
-10 3
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = -15 V, VGS = 0 V, f = 1.0 MHz
190 70 30
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = -15 V, ID = -1 A, VGS = -4.5 V, RGEN = 6
7 8 14 2
14 16 25 6 3.5
ns ns ns ns nC nC nC
VDS = -5 V, ID = -1.8 A, VGS = -10 V
2.3 1 0.8
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.8 A
(Note 2)
-0.8 -0.8 -1.2
A V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design.Both devices are assumed to be operating and sharing the dissipated heat energy equally.
a) 130 °C/W when mounted on a 0.125 in2 pad of 2 oz. copper.
b) 140 °C/W when mounted on a 0.005 in2 pad of 2 oz. copper.
c) 180 °C/W when mounted on a 0.0015 in2 pad of 2 oz. copper.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDC6506P Rev. C
FDC6506P
Typical Characteristics
10 VGS=-10V -ID, DRAIN CURRENT (A) 8 -7.0V -5.5V -4.5V -4.0V -3.5V 2 -3.0V 0 0 1 2 3 4 5
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5
2 VGS=-4.0V 1.5 -4.5V -5.0V -6.0V -7.0V 1 -10V
6
4
0.5 0 2 4 6 8 10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.5 RDS(ON), ON-RESISTANCE (OHM)
1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100
o
ID=-1.8A VGS=-10V
ID=-1.0A 0.4
0.3 TJ=125 C 0.2 25 C 0.1
o o
125
150
2
3
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE ( C)
-V GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
4 VDS=-5V -ID, DRAIN CURRENT (A) 3 125 2 TJ=-55 C 25 C
o o o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 -IS, REVERSE DRAIN CURRENT (A) VGS=0
1 TJ=125 C 0.1 25 C -55 C 0.01
o o o
1
0 1 2 3 4 5
0.001 0 0 .3 0.6 0 .9 1.2 1 .5
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDC6506P Rev. C
FDC6506P
Typical Characteristics
10 -VGS, GATE-SOURCE VOLTAGE (V) ID= -1.8A
(continued)
300 VDS=-5.0V CAPACITANCE (pF) f=1MHz VGS=0V 240 -10V Ciss 180
8
6 -15V 4
120 Coss Crss
2
60
0 0 1 2 Qg, GATE CHARGE (nC) 3 4
0 0 6 12 18 24 30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
30 10 -I , DRAIN CURRENT (A) 3 1 0.3 0.1 0.03 0.01 0.1
N S(O )L T IMI
5
100 us
1m s 10m s 10 0m s 1s DC
POWER (W)
4
RD
SINGLE PULSE RJA =180°C/W TA = 25°C
3
VGS = -10V SINGLE PULSE R JA = 180°C/W T A = 25°C
0.2 0.5 1 2
2
D
1
5
10
20
50
0 0.01
0.1
1
10
100
300
-VDS , DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
T R A N S IE NT THERMAL RESISTANCE
1 0. 5
D = 0.5
r(t), NORMALIZED EFFECTIVE
0. 2 0. 1 0.05
0.2 0.1 0.05 0.02 0.01
R JA (t) = r(t) * R JA R JA =180°C/W
P(pk)
t1
t2
0.02 0.01 0.0001
Single Pulse
TJ - T A = P * R JA (t) Duty Cycle, D = t 1 / t 2
0.001
0.01
0.1 t 1 , TIME (sec)
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design.
FDC6506P Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST® FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
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