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Details, datasheet, quote on part number:FDC654P
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| Part: | FDC654P |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | P-channel Enhancement Mode Field Effect Transistor |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FDC654P datasheet File size : 119 kB |
| Request For quote: | Find where to buy FDC654P
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Datasheet text preview:
FDC654P
May 2003
FDC654P
Single P-Channel Logic Level PowerTrench® MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. It has been optimized for battery power management applications.
Features
· 3.6 A, 30 V. RDS(ON) = 75 m @ VGS = 10 V RDS(ON) = 125 m @ VGS = 4.5 V
· Low gate charge (6.2 nC typical) · High performance trench technology for extremely low RDS(ON)
Applications
· Battery management · Load switch · Battery protection
D
D
S
1 2
G
6 5 4
SuperSOT TM-6
D
D
3
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
30 ±20
(Note 1a)
Units
V V A W °C
3.6 10 1.6 0.8 55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 30
°C/W °C/W
Package Marking and Ordering Information
Device Marking .654 Device FDC654P Reel Size 7'' Tape width 8mm Quantity 3000 units
©2003 Fairchild Semiconductor Corporation
FDC654P Rev E1 (W)
FDC654P
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA ID = 250 µA,Referenced to 25°C VDS = 24 V, VGS = 20 V, VGS = 20 V, V GS = 0 V VDS = 0 V VDS = 0 V
Min
30
Typ
Max Units
V
Off Characteristics
22 1 100 100 1 1.9 4 63 100 90 5 6 298 83 39 6 13 11 6 VDS = 15 V, VGS = 10 V ID = 3.6 A, 6.2 1 1.2 1.3
(Note 2)
mV/°C µA nA nA V mV/°C 75 125 115 m
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 3.6 A VGS = 4.5 V, ID = 2.7 A VGS = 10 V, ID = 3.6A,TJ=125°C VGS = 4.5 V, VDS = 5 V VDS = 5 V, ID = 3.6 A
3
ID(on) gFS Ciss Coss Crss td(on) tr t d(off) tf Qg Qgs Qgd IS VSD
A S pF pF pF 12 23 20 12 9 ns ns ns ns nC nC nC A V
Dynamic Characteristics
VDS = 15 V, f = 1.0 MHz V GS = 0 V,
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
VDD = 15 V, VGS = 10 V,
ID = 1 A, RGEN = 6
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward Voltage VGS = 0 V, IS = 1.3 A 0.8 1.2
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
78°C/W when mounted on a 1in2 pad of 2 oz copper
b)
156°C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDC654P Rev E1(W)
FDC654P
Typical Characteristics
15
2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = -10V
-ID, DRAIN CURRENT (A) 12
-6.0V -5.0V V -4.5V
1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0 3 6 9 12 15 -ID, DRAIN CURRENT (A)
VGS = -3.5V
9
-4.0V
-4.0V -4.5V -5.0V -6.0V -7.0V -10V
6
-3.5V
3
-3.0V
0 0 1 2 3 4 5 -VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.3 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = -3.6A VGS = -10V
ID = -1.8A
0.25
1.4
1.2
0.2
TA = 125oC
0.15
1
0.8
0.1
TA = 25oC
0.6 -50 -25 0 25 50 75 100
o
0.05
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE ( C)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
10 -IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10
VDS = -5.0V
-ID, DRAIN CURRENT (A) 8
TA = -55oC
25oC 125oC
VGS = 0V
1
TA = 125oC
0.1
6
25oC
0.01
4
-55oC
2
0.001
0 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V)
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDC654P Rev E1(W)
FDC654P
Typical Characteristics
10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -3.6A 8 VDS = -5V -15V 6 -10V
400
CISS f = 1 MHz VGS = 0 V
CAPACITANCE (pF)
300
200
COSS
4
2
100
CRSS
0 0 1 2 3 4 5 6 7 Qg, GATE CHARGE (nC)
0 0 6 12 18 24 30 -VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 P(pk), PEAK TRANSIENT POWER (W) 10
Figure 8. Capacitance Characteristics.
-ID, DRAIN CURRENT (A)
10
RDS(ON) LIMIT 100µs 1ms 10ms 100ms 1s VGS = -10V SINGLE PULSE RJA = 156oC/W TA = 25oC DC
10µs
8
SINGLE PULSE RJA = 156°C/W TA = 25°C
6
1
4
0.1
2
0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V)
0 0.01
0.1
1 t1, TIME (sec)
10
100
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5
RJA(t) = r(t) + RJA RJA = 156oC/W
0.2
0.1
0.1 0.05 0.02 0.01 SINGLE PULSE
P(pk) t1 t2 T J - T A = P * R J A ( t ) Duty Cycle, D = t1 / t2
0.01 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDC654P Rev E1(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrenchâ MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERâ OPTOLOGICâ SMART START OPTOPLANAR
SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogicâ TruTranslation UHC UltraFETâ VCX
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I2
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