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Details, datasheet, quote on part number:FDC655AN
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| Part: | FDC655AN |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | Single N-channel Logic Level PowerTrench® MOSFET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FDC655AN datasheet File size : 209 kB |
| Request For quote: | Find where to buy FDC655AN
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Datasheet text preview:
June 1998
FDC655AN Single N-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
6.3 A, 30 V. RDS(ON) = 0.027 @ VGS = 10 V R DS(ON) = 0.035 @ VGS = 4.5 V. Fast switching. Low gate charge ( typical 9 nC). SuperSOTTM-6 package: small footprint (72% smaller than SO-8); low profile (1mm thick); pin compatible with TSOP-6.
SOT-23
S u p e r S O T -6
TM
S u p e r S O T -8
TM
SO-8
SOT-223
SOIC-16
D D
S
1
6
.55
pin 1
A
D G
2 3
5
4
SuperSOT
TM
-6
D
Absolute Maximum Ratings T A = 25°C unless otherwise note
Symbol Parameter VDSS VGSS ID PD TJ,TSTG RJA RJC Drain-Source Voltage Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Maximum Power Dissipation
(Note 1a) (Note 1b) (Note 1a)
FDC655AN 30 ±20 6.3 20 1.6 0.8 -55 to 150 78 30
Units V V A W
Operating and Storage Temperature Range Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
°C °C/W °C/W
THERMAL CHARACTERISTICS
(Note 1a) (Note 1)
© 1998 Fairchild Semiconductor Corporation
FDC655AN Rev.C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25 C VDS = 24 V, VGS = 0 V TJ = 55oC IGSSF IGSSR VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V
o
30 23 1 10 100 -100
V mV /oC µA µA nA nA
BVDSS/TJ
IDSS
ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage Gate Threshold VoltageTemp.Coefficient Static Drain-Source On-Resistance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25 C VGS = 10 V, ID = 6.3 A TJ = 125oC VGS = 4.5 V, ID = 5.5 A ID(on) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a. 78oC/W when mounted on a minimum on a 1 in2 pad of 2oz Cu in FR-4 board. b. 156oC/W when mounted on a minimum pad of 2oz Cu in FR-4 board. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
o
1
1.6 -4.2 0.023 0.035 0.029
3
V mV /oC
VGS(th)/TJ
RDS(ON)
0.027 0.045 0.035
On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Continuous Source Diode Current Drain-Source Diode Forward Voltage
VGS = 10 V, VDS = 5 V VDS = 10 V, ID = 6.3 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz
20 4.5 830 185 80
A S pF pF pF 12 18 29 12 13 ns ns ns ns nC nC nC 1.3 A V
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 2) VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 6 10 18 5 VDS = 15 V, ID = 6.3 A, VGS = 5 V 9 2.8 3.1
DRAIN-SOURCE DIODE CHARACTERISTICS VGS = 0 V, IS = 1.3 A 0.73 1.2
(Note 2)
FDC655AN Rev.C
Typical Electrical Characteristics
25 I D , DRAIN-SOURCE CURRENT (A)
R DS(ON) , NORMALIZED
20
6.0V
3.5V
DRAIN-SOURCE ON-RESISTANCE
VGS = 1 0 V
4.5V
2
15
1.5
VGS = 3.5V 4.0V 4.5V 5.0V 7.0V 10V
3.0V
10
1
5
2.5V
0 1 2 3
0
0.5
0
5
10
15
20
25
VDS , DRAIN-SOURCE VOLTAGE (V)
I D , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.6 DRAIN-SOURCE ON-RESISTANCE
R DS(ON) , ON-RESISTANCE (OHM)
I D = 6.3 A VGS = 10 V
0.1
I D = 3.2A
R DS(ON), NORMALIZED
1.4
0.08
1.2
0.06
1
0.04
TA = 125°C
0.8
0.02
TA = 25°C
0.6 -50
0
-25
0
25
50
75
100
125
150
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C) J
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-To-Source Voltage.
VDS = 5V
I D , DRAIN CURRENT (A) 20
TA = -55°C
I S , REVERSE DRAIN CURRENT (A)
25
20
V GS = 0V
25°C 125°C
5 1 0.1 0.01 0.001 0.0001
15
TA = 125°C
25°C -55°C
10
5
0
1 V
2
GS
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
, GATE TO SOURCE VOLTAGE (V)
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current
FDC655AN Rev.B
Typical Electrical Characteristics
10 VGS , GATE-SOURCE VOLTAGE (V) 2000
I D = 6.3A
8
V DS = 5V
CAPACITANCE (pF)
15V
10V
1000 500
C iss
6
4
200 100 50 0.1 V
DS
C oss f = 1 MHz V GS = 0V
0.5 1 2 5
2
C rss
10 30
0
0
3
6
9
12
15
18
Q g , GATE CHARGE (nC)
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
50 20 ID , DRAIN CURRENT (A) 5 1 0.5 0.1 0.05 0.01 0.05
IT LIM N) (O S RD
5
100 1m s 10m s 100 ms 1s DC
us
4 POWER (W)
SINGLE PULSE RJA =156 °C/W TA = 25°C
3
2
VGS = 10V SINGLE PULSE RJA =156°C/W TA = 25°C
0.1 0.2 0.5 1 2
1
5
10
20 30
50
0 0.01
0.1
1
10
100
300
SINGLE PULSE TIME (SEC)
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1 TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.5 0.2 0.1 0.05 0.02 0.01 0.005
D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk)
R JA (t) = r(t) * R JA R = 156 °C/W
JA
t1
t2
TJ - TA = P * R JA (t) Duty Cycle, D = t 1/ t 2
0.00001
0.0001
0.001
0.01
0.1 t 1, TIME (sec)
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1b. Transient thermal response will change depending on the circuit board design.
FDC655AN Rev.B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLT TM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST ® FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench ® QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER ®
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET ®
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS D e f i n i t i o n of Terms D a t a s h e e t Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4
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